WTV3585
P-Channel Electrical Characteristics (T = 25°C Unless otherwise noted)
A
Characteristic
Symbol Min
Typ
Max
Unit
OFF Characteristics
Drain-Source Breakdown Voltage
VGS=0,ID=-250μA
Drain-Source Leakage Current
Tj=25°C, VDS=-20V, VGS=0V
Tj=70°C, VDS=-16V, VGS=0V
BVDSS
IDSS
-20
-
-
V
-
-
-
-
-1
-25
μA
nA
Gate-Source Leakage current
VGS= 12V
IGSS
-
-
100
ON Characteristics
Gate-Source Threshold Voltage
VDS=VGS, ID=-250μA
VGS(Th)
-
-
-1.2
V
Drain-Source On-Resistance2
VGS=-10V, ID=-2.8A
VGS=-4.5V, ID=-2.5A
VGS=-2.5V, ID=-2A
-
-
-
-
-
-
120
160
300
RDS(on)
mΩ
Forward Transconductance
VDS=-5V,ID=-2A
g
fs
-
4.0
-
S
Dymamic Characteristics
Input Capacitance
VGS=0V, VDS=-20V, f=1.0MHz
-
-
-
270
70
430
Ciss
Output Capacitance
VGS=0V, VDS=-20V, f=1.0MHz
Coss
-
-
pF
Reverse Transfer Capacitance
VGS=0V, VDS=-20V, f=1.0MHz
Crss
55
Switching Characteristics
Turn-on Delay Time
VDS=-10V, VGS=-10V, ID=-1A, RG=3.3Ω, RD=10Ω
-
-
-
-
-
-
-
6
17
16
5
-
-
td(on)
tr
td(off)
tf
Rise Time
VDS=-10V, VGS=-10V, ID=-1A, RG=3.3Ω, RD=10Ω
ns
Turn-off Delay Time
VDS=-10V, VGS=-10V, ID=-1A, RG=3.3Ω, RD=10Ω
-
Fall Time
-
VDS=-10V, VGS=-10V, ID=-1A, RG=3.3Ω, RD=10Ω
Total Gate Charge2
VDS=-16V, VGS=-4.5V, ID=-2A
Qg
5
8
-
Gate-Source Charge
VDS=-16V, VGS=-4.5V, ID=-2A
nC
Qgs
Qgd
1
Gate-Source Change
VDS=-16V, VGS=-4.5V, ID=-2A
2
-
Source-Drain Diode Characteristics
Forward On Voltage2
IS=-1.2A, VGS=0V
Reverse Recovery Time2
IS=-2A, VGS=0V, dl/dt=100A/µs
VSD
Trr
-
-
-
-1.2
-
V
20
nS
Reverse Recovery Charge
IS=-2A, VGS=0V, dl/dt=100A/µs
Qrr
-
15
-
nC
Note: 1. Pulse width limited by Max. junction temperature.
2. Pulse width ≤ 300us, duty cycle ≤ 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board, t≤5sec; 180°C/W when mounted on Min. copper pad.
WEITRON
http:www.weitron.com.tw
3/8
03-Apr-07
