WTA8921
COLLECTOR
PNP Silicon Transistors
3
* “G” Lead(Pb)-Free
1
BASE
2
SOT-23
EMITTER
(Ta=25 C)
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Symbol
Value
Unit
Vdc
Vdc
V
CEO
-30
-35
V
CBO
Emitter-Base Voltage
Collector Current -Continuous
V
-5.0
-800
Vdc
mAdc
EBO
I
C
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation FR-5 Board
Symbol
Value
Unit
mW
(1)
P
200
D
T =25 C
A
mW/ C
C/W
C
Derate above 25 C
Thermal Resistance, Junction Ambient
1.6
625
R
θJA
-55 to +150
T
Junction and Storage, Temperature
Tstg
J,
Device Marking
WTA8921=IO, IY
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min
Max
Unit
-
Collector-Emitter Breakdown Voltage (I = -10 mAdc, I =0)
V
-30
Vdc
C
B
(BR)CEO
-
-
-35
Vdc
Vdc
Collector-Base Breakdown Voltage (I = -1 uAdc, I =0)
V
V
C
E
(BR)CBO
-5.0
Emitter-Base Breakdown Voltage (I = -1 uAdc, I =0)
(BR)EBO
E
C
-
-
I
uAdc
uAdc
-1.0
-1.0
Collector Cutoff Current (V = -30Vdc, I =0)
CBO
CB
E
I
Emitter Cutoff Current (V = -5.0 V c, I =0)
EBO
d
EB
C
1. FR-5=1.0 0.75 0.062 in
WEITRON
http://www.weitron.com.tw
