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2WOM

型号:

2WOM

描述:

硅桥式整流器[ SILICON BRIDGE RECTIFIERS ]

品牌:

HY[ HY ELECTRONIC CORP. ]

页数:

2 页

PDF大小:

99 K

2WO/2WOM SERIES  
REVERSE VOLTAGE - 50 to 1000Volts  
FORWARD CURRENT - 2.0 Amperes  
SILICON BRIDGE RECTIFIERS  
WOB  
WOBM  
.366(9.3)  
.350(8.9)  
.386(9.8)  
.354(9.0)  
FEATURES  
.220(5.6)  
.200(5.1)  
Surge overload rating -60 amperes peak  
Ideal for printed circuit board  
.181(4.6)  
.150(3.8)  
Reliable low cost construction utilizing molded plastic  
technique results in expensive product  
Mounting position:Any  
1.1  
(27.9)  
MIN  
1.0  
(25.4)  
MIN  
1.0  
(25.4)  
MIN  
1.1  
(27.9)  
MIN  
Lead: Sliver plated copper lead  
.032(0.81)  
.028(0.71)  
.032(0.81)  
.028(0.71)  
POS.  
LEAD  
POS.  
LEAD  
.220(5.6)  
.180(4.6)  
.220(5.6)  
.180(4.6)  
.220(5.6)  
.180(4.6)  
.220(5.6)  
.180(4.6)  
SPACING  
SPACING  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
2W005  
2W01  
2W02  
2W04  
2W06  
2W08  
2W10  
SYMBOL  
UNIT  
CHARACTERISTICS  
2W005M 2W01M 2W02M 2W04M 2W06M 2W08M 2W10M  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC Blocking Voltage  
100  
1000  
Maximum Average Forward Rectified Current  
I(AV)  
2.0  
A
0.375″(9.5mm) Lead Lengths  
Peak Forward Surge Current ,  
@TA=25 ℃  
IFSM  
60  
A
8.3ms Single Half Sine-Wave  
Super Imposed on Rated Load (JEDEC Method)  
I2t Rating for Fusing (t8.3ms)  
Maximum Forward Voltage Drop  
Per Element at 2.0A Peak  
I2t  
A2s  
V
15.0  
1.1  
VF  
Maximum DC Reverse Current at Rated  
DC Blocking Voltage  
TJ=25℃  
TJ=100℃  
10.0  
1.0  
30  
μA  
IR  
mA  
Typical Junction Capacitance Per Element (Note1)  
Operating Temperature Range  
CJ  
TJ  
pF  
-55 to +125  
-55 to +150  
Storage Temperature Range  
TSTG  
Note:1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
~ 312 ~  
RATING AND CHARACTERISTIC CURVES  
2WO/2WOM SERIES  
FIG.1-DERATING CURVE FOR  
OUTPUT RECTIFIED CURRENT  
FIG.2-MAXIMUM NON-REPETITIVE PEAK  
FORWARD SURGE CURRENT  
2.0  
60  
50  
40  
30  
20  
SINGLE SINE-WAVE  
JEDEC METHOD  
10  
0
0
1
2
5
10  
20  
50  
100  
100  
150  
50  
NUMBER OF CYCLES AT 60Hz  
AMBIENT TEMPERATURE ,℃  
FIG.3-TYPICAL FORWARD  
CHARACTERISTICS  
FIG.3-TYPICAL REVERSE CHARACTERISTICS  
10  
1.0  
0.1  
0.01  
10.0  
TJ=25℃  
TYPICAL  
DISTRIBUTION  
TJ=100℃  
1.0  
0.1  
TJ=25℃  
40  
60  
120  
140  
0
20  
80  
100  
0.01  
0.4  
0.6  
1.0  
0.8  
1.2  
1.4  
PERCENT OF RATED PEAK REVERSE VOLTAGE  
INSTANTANEOUS FORWARD VOLTAGE. VOLTS  
FIG.5-TYPICAL JUNCTION CAPACITANCE PER BRIDGE ELEMENT  
100  
60  
40  
20  
10  
6.0  
4.0  
TJ=25,  
f=1MHZ  
2.0  
1.0  
Vsig=50m p-p  
100  
10  
20  
40  
0.1  
0.2  
0.4  
1.0  
2.0  
4.0  
REVERSE VOLTAGE,VOLTS  
~ 313 ~  
厂商 型号 描述 页数 下载

HY

2WO 硅桥式整流器[ SILICON BRIDGE RECTIFIERS ] 2 页

MICRO-ELECTRONICS

2WO005 [ Bridge Rectifier Diode, 1 Phase, 2A, 50V V(RRM), Silicon, CASE R-8, 4 PIN ] 1 页

MICRO-ELECTRONICS

2WO005M [ Bridge Rectifier Diode, 1 Phase, 2A, 50V V(RRM), Silicon, CASE R-9, 4 PIN ] 1 页

MICRO-ELECTRONICS

2WO01M [ Bridge Rectifier Diode, 1 Phase, 2A, 100V V(RRM), Silicon, CASE R-9, 4 PIN ] 1 页

MICRO-ELECTRONICS

2WO02M [ Bridge Rectifier Diode, 1 Phase, 2A, 200V V(RRM), Silicon, CASE R-9, 4 PIN ] 1 页

MICRO-ELECTRONICS

2WO04 [ Bridge Rectifier Diode, 1 Phase, 2A, 400V V(RRM), Silicon, CASE R-8, 4 PIN ] 1 页

MICRO-ELECTRONICS

2WO04M [ Bridge Rectifier Diode, 1 Phase, 2A, 400V V(RRM), Silicon, CASE R-9, 4 PIN ] 1 页

MICRO-ELECTRONICS

2WO06 [ Bridge Rectifier Diode, 1 Phase, 2A, 600V V(RRM), Silicon, CASE R-8, 4 PIN ] 1 页

MICRO-ELECTRONICS

2WO06M [ Bridge Rectifier Diode, 1 Phase, 2A, 600V V(RRM), Silicon, CASE R-9, 4 PIN ] 1 页

MICRO-ELECTRONICS

2WO08 [ Bridge Rectifier Diode, 1 Phase, 2A, 800V V(RRM), Silicon, CASE R-8, 4 PIN ] 1 页

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