WTC9435
Electrical Characteristics (TA=25°C Unless Otherwise Specified)
Characteristic
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS (th)
IGSS
-
-
V
V
-30
VGS=0V, ID=-250µA
Gate-Source Threshold Voltage
VDS=VGS, ID=-250µA
-3.0
-1.0
-
-1.7
-
Gate-Source Leakage Current
+
100
nA
µA
+
VDS=0V,VGS= 20V
Zero Gate Voltage Drain Current
VDS=-24V,VGS=0V
IDSS
-
-1
-
Drain-Source On-Resistance
VGS=-4.5V,ID=-4.2A
RDS(on)
-
-
70
50
mΩ
S
=-10V , ID=-5.3A
VGS
Forward Transconductance
VDS=-10V, ID=-5.3A
g
fs
-
10
-
Dynamic
Input Capacitance
VDS=-15V,VGS=0V, f=1MHZ
C
-
-
-
iss
-
-
745
440
120
Output Capacitance
VDS=-15V,VGS=0V, f=1MHZ
C
oss
F
P
Reverse Transfer Capacitance
VDS=-15V,VGS=0V, f=1MHZ
C
rss
-
Switching
Turn-On Delay Time(2)
VDD=-15V, ID=-1A, VGEN=-10V, RG=6Ω, RL=15Ω
t
-
-
-
nS
nS
d(on)
9
Rise Time
t
r
-
-
-
15
VDD=-15V, ID=-1A, VGEN=-10V, RG=6Ω, RL=15Ω
Turn-O Time
VDD=-15V, ID=-1A, VGEN=-10V, RG=6Ω, RL=15Ω
t
)
nS
nS
nc
75
40
-
-
Fall Time
t
f
VDD=-15V, ID=-1A, VGEN=-10V, RG=6Ω, RL=15Ω
Total Gate Charge(2)
VDS=-15V, ID=-5.3A,VGS=-10V
28
Qg
-
-
Gate-Source Charge
Qgs
-
3
7
nc
nc
-
-
VDS=-15V, ID=-5.3A,VGS=-10V
Gate-Drain Charge
VDS=-15V, ID=-5.3A,VGS=-10V
Qgd
-
Diode Forward Voltage(2)
VGS=0V, IS=-2.6A
Drain-Source
-
-
-1.3
-2.6
VSD
V
-
-
IS
A
Continuous Source Current (Body Diode)
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 125°C/W when mounted on Min. copper pad.
WEITRON
http://www.weitron.com.tw
2/4
17-Aug-09
