1SS106
SILICON SCHOTTKY BARRIER DIODE
for various detector, high speed switching
Max. 0.5
Features
Min. 27.5
Max. 3.9
Min. 27.5
Max. 1.9
• Detection efficiency is very good.
• Small temperature coefficient.
• High reliability with glass seal.
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
XXX
ST
Glass Case DO-35
Dimensions in mm
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
VR
Value
10
Unit
V
Reverse Voltage
Average Forward Current
Junction Temperature
IO
30
mA
O
C
TJ
125
O
C
Storage Temperature Range
Tstg
- 55 to + 125
O
Electrical Characteristics at Ta = 25 C
Parameter
Symbol
Min.
4.5
Max.
-
Unit
Forward Current
at VF = 1 V
IF
IR
C
η
mA
µA
pF
%
Reverse Current
at VR = 6 V
-
-
70
1.5
-
Capacitance
at VR = 1 V, f = 1 MHz
Rectifier Efficiency
70
100
at Vin = 2 Vrms, f = 40 MHz, RL = 5 KΩ, CL = 20 pF
ESD Capability 1)
-
-
V
at C = 200 pF, both forward and reverse direction 1 pulse.
1) Failure criterion: IR ≥ 140 µA at VR = 6 V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/06/2007
