1SS368
SILICON EPITAXIAL PLANAR DIODE
Features
• Small package
PINNING
• Low forward voltage
• Fast reverse recovery time
• Small total capacitance
DESCRIPTION
Cathode
PIN
1
Anode
2
2
1
W2
Applications
Top View
Marking Code: "W2"
Simplified outline SOD-323 and symbol
• Ultra high speed switching
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
Value
Unit
Maximum (Peak) Reverse Voltage
Reverse Voltage
VRM
VR
85
V
V
80
100
Average Forward Current
Maximum (Peak) Forward Current
Surge Current (10 ms)
IO
mA
mA
A
IFM
IFSM
Ptot
Tj
200
1
Power Dissipation
150 1)
mW
O
C
Junction Temperature
125
O
C
Storage Temperature Range
Tstg
- 55 to + 125
1) Mounted on a glass epoxy circuit board of 20 X 20 mm, pad dimension of 4 X 4 mm
O
Characteristics at Ta = 25 C
Parameter
Symbol
VF
Max.
1.2
Unit
V
Forward Voltage
at IF = 100 mA
Reverse Current
at VR = 30 V
at VR = 80 V
IR
0.1
0.5
µA
Total Capacitance
at f = 1 MHz
CT
trr
3
4
pF
ns
Reverse Recovery Time
at IF = IR = 10 mA, Irr = 0.1 X IR , RL = 100 Ω
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/04/2009
