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3TA250GK03NB

型号:

3TA250GK03NB

描述:

三相晶闸管模块(半桥)[ Three Phase Thyristor Module (Half Bridge) ]

品牌:

SIRECTIFIER[ SIRECTIFIER SEMICONDUCTORS ]

页数:

3 页

PDF大小:

1678 K

3TA250GKxxNB  
Three Phase Thyristor Module (Half Bridge)  
G2  
K2  
K1  
Dimensions in mm (1mm = 0.0394")  
K2  
K2  
2
K1  
1
G1  
K3  
3
K1  
K3  
G2  
G1  
K2  
K1  
G3 K3  
A
A
K3  
G3  
Type  
VRSM  
V
VRRM  
V
3TA250GK03NB  
3TA250GK04NB  
400  
500  
300  
400  
Symbol  
Test Conditions  
Maximum Ratings  
Unit  
250  
392  
IT(AV)  
IT(RMS)  
Single phase, half wave, 180oC conduction,TC=114oC  
1/2cycle, 50Hz/60Hz, peak value, non-repetitive  
A
6750/7420  
620000  
A
ITSM  
I2t  
A2s  
10  
1
PGM  
W
A
PG(AV)  
3
IFGM  
VFGM  
VRGM  
10  
5
V
IG=150mA, Tj=25oC, VD=1/2VDRM, dIG/dt=1A/us  
/us  
A
di/dt  
60  
-30...+150  
150  
-30...+125  
TVJ  
TVJM  
Tstg  
oC  
to heatsink M6  
Ms  
Mt  
3 ~ 5  
~
Nm  
to terminals M6  
2.5  
5
210  
g
Weight  
3TA250GKxxNB  
Three Phase Thyristor Module (Half Bridge)  
Symbol  
Test Conditions  
at VDRM, single phase, half wave, Tj=150oC  
On-State Current 750A, Tj=25oC Inst. measurement  
Tj=25oC, IT=1A, VD=6V  
Unit  
min.  
typ.  
max.  
IDRM  
IRRM  
80  
80  
mA  
VTM  
1.25  
200  
V
mA  
IGT  
Tj=150oC, VD=1/2VDRM  
V
0.25  
VGD  
IT=100A, IG=200mA, Tj=25oC, VD=1/2VDRM, dIG/dt=1A/us  
Tj=150oC, VD=2/3VDRM, Exponential wave  
Tj=25oC  
tgt  
10  
us  
V/us  
mA  
150  
dv/dt  
IH  
150  
oC/W  
Junction to case (1/3 Module)  
RthJC  
0.09  
FEATURES  
* International standard package  
APPLICATIONS  
ADVANTAGES  
* Welding Machine Power Supply * Space and weight savings  
* Copper  
* Glass passivated chips  
* RoHS compliance  
* DC Power Supply  
* Simple mounting with two screws  
* Improved temperature and power  
cycling  
base plate  
* Reduced protection circuits  
3TA250GKxxNB  
Three Phase Thyristor Module (Half Bridge)  
Case Temperature(Single phase half wave)  
Transient Thermal Impedance  
15  
14  
13  
12  
1  
1  
2
Per one element  
Junction to Case  
360  
θConduction Angle  
1  
0  
0  
0  
11  
10  
Per one element  
0  
0  
θ30  
θ90゜  
θ180゜  
D.C.  
θ60゜  
θ120゜  
10  
10  
10  
10  
Average On-State Current(A)  
10  
10  
Time t(sec)  
On-State Voltage max  
(Non-Repetitive)  
8000  
7000  
6000  
5000  
Per one element  
10  
10  
Hz  
4000  
3000  
10  
1.  
On-State Voltage V)  
10  
Time(cycles)  
10  
(Single phase half wave)  
Gate Characteristics  
40  
30  
20  
D.C.  
10  
10  
θ180゜  
θ120゜  
θ90゜  
2
θ60゜  
θ30゜  
360  
10  
: Conduction Angle  
Per one element  
Maximum Gate Voltage that will not terigger any unit  
10 0  
Average On-State Current(A)  
30  
10  
10  
Gate CurrentmA)  
10  
厂商 型号 描述 页数 下载

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