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4N27-X007

型号：

4N27-X007

描述：

光电耦合器，光电晶体管输出，带底座的连接[ Optocoupler, Phototransistor Output, With Base Connection ]

品牌：

VISHAY[ VISHAY ]

页数：

9 页

PDF大小：

148 K

下载PDF手册
4N25/ 4N26/ 4N27/ 4N28  
Vishay Semiconductors  
Optocoupler, Phototransistor Output, With Base Connection  
Features  
• Isolation Test Voltage 5300 VRMS  
• Interfaces with Common Logic Families  
1
6
A
C
B
C
E
• Input-output Coupling Capacitance < 0.5 pF  
• Industry Standard Dual-in-line 6-pin Package  
• Lead-free component  
5
4
2
3
NC  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Pb  
i179004  
e3  
Pb-free  
These isolation processes and the Vishay ISO9001  
quality program results in the highest isolation perfor-  
mance available for a commercial plastic phototrans-  
istor optocoupler.  
Agency Approvals  
• UL1577, File No. E52744 System Code H or J,  
Double Protection  
• DIN EN 60747-5-2 (VDE0884)  
DIN EN 60747-5-5 pending  
Available with Option 1  
The devices are also available in lead formed config-  
uration suitable for surface mounting and are avail-  
able either on tape and reel, or in standard tube  
shipping containers.  
Applications  
AC Mains Detection  
Reed relay driving  
Note:  
For additional design information see Application  
Note 45 Normalized Curves  
Switch Mode Power Supply Feedback  
Telephone Ring Detection  
Logic Ground Isolation  
Order Information  
Part  
Remarks  
Logic Coupling with High Frequency Noise Rejection  
4N25  
4N26  
4N27  
4N28  
CTR > 20 %, DIP-6  
CTR > 20 %, DIP-6  
Description  
CTR > 10 %, DIP-6  
The 4N25 family is an Industry Standard Single Chan-  
nel Phototransistor Coupler.This family includes the  
4N25/ 4N26/ 4N27/ 4N28. Each optocoupler consists  
of gallium arsenide infrared LED and a silicon NPN  
phototransistor.  
These couplers are Underwriters Laboratories (UL)  
listed to comply with a 5300 VRMS isolation test volt-  
age. This isolation performance is accomplished  
through special Vishay manufacturing process.  
CTR > 10 %, DIP-6  
4N25-X006  
4N25-X007  
4N25-X009  
4N26-X006  
4N26-X007  
4N26-X009  
4N27-X007  
4N27-X009  
4N28-X009  
CTR > 20 %, DIP-6 400 mil (option 6)  
CTR > 20 %, SMD-6 (option 7)  
CTR > 20 %, SMD-6 (option 9)  
CTR > 20 %, DIP-6 400 mil (option 6)  
CTR > 20 %, SMD-6 (option 7)  
CTR > 20 %, SMD-6 (option 9)  
CTR > 10 %, SMD-6 (option 7)  
CTR > 10 %, SMD-6 (option 9)  
CTR > 10 %, SMD-6 (option 9)  
Compliance to DIN EN 60747-5-2(VDE0884)/ DIN EN  
60747-5-5 pending partial discharge isolation specifi-  
cation is available by ordering option1.  
For additional information on the available options refer to  
Option Information.  
Document Number 83725  
Rev. 1.4, 26-Jan-05  
www.vishay.com  
1
4N25/ 4N26/ 4N27/ 4N28  
Vishay Semiconductors  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is  
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute  
Maximum Rating for extended periods of the time can adversely affect reliability.  
Input  
Parameter  
Test condition  
Symbol  
Value  
6.0  
Unit  
V
Reverse voltage  
V
R
Forward current  
Surge current  
I
60  
2.5  
100  
mA  
A
F
t < 10 µs  
I
FSM  
Power dissipation  
P
mW  
diss  
Output  
Parameter  
Test condition  
Symbol  
Value  
70  
Unit  
V
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector current  
V
V
CEO  
EBO  
7.0  
50  
V
I
I
mA  
mA  
mW  
C
Collector currrent  
t < 1.0 ms  
100  
150  
C
Power dissipation  
P
diss  
Coupler  
Parameter  
Test condition  
Symbol  
Value  
5300  
Unit  
Isolation test voltage  
V
V
ISO  
RMS  
mm  
mm  
mm  
Creepage  
Clearance  
≥ 7.0  
≥ 7.0  
≥ 0.4  
Isolation thickness between  
emitter and detector  
Comparative tracking index  
Isolation resistance  
DIN IEC 112/VDE0303, part 1  
175  
12  
V
V
= 500 V, T  
= 500 V, T  
= 25 °C  
R
Ω
Ω
IO  
IO  
amb  
amb  
IO  
IO  
10  
11  
= 100 °C  
R
10  
Storage temperature  
Operating temperature  
Junction temperature  
Soldering temperature  
T
- 55 to + 150  
- 55 to + 100  
100  
°C  
°C  
°C  
°C  
stg  
T
amb  
T
j
max.10 s, dip soldering:  
distance to seating plane  
≥ 1.5 mm  
T
260  
sld  
www.vishay.com  
2
Document Number 83725  
Rev. 1.4, 26-Jan-05  
4N25/ 4N26/ 4N27/ 4N28  
Vishay Semiconductors  
Electrical Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering  
evaluation. Typical values are for information only and are not part of the testing requirements.  
Input  
Parameter  
Test condition  
I = 50 mA  
Symbol  
Min  
Typ.  
1.3  
Max  
1.5  
Unit  
V
1)  
V
Forward voltage  
F
F
1)  
V
V
= 3.0 V  
= 0 V  
I
R
0.1  
25  
100  
µA  
Reverse current  
Capacitance  
R
R
C
pF  
O
1)  
Indicates JEDEC registered values  
Output  
Parameter  
Test condition  
Part  
Symbol  
Min  
70  
Typ.  
Max  
Unit  
V
Collector-base breakdown  
I
I
I
= 100 µA  
= 1.0 mA  
= 100 µA  
BV  
BV  
BV  
C
C
E
CBO  
CEO  
ECO  
1)  
voltage  
Collector-emitter breakdown  
30  
V
V
1)  
voltage  
Emitter-collector breakdown  
7.0  
1)  
voltage  
1)  
V
= 10 V, (base open)  
4N25  
5.0  
50  
nA  
I
(dark)  
CE  
CEO  
4N26  
4N27  
4N28  
5.0  
5.0  
10  
50  
50  
nA  
nA  
nA  
nA  
100  
20  
1)  
V
V
= 10 V, (emitter open)  
= 0  
2.0  
I
(dark)  
CB  
CE  
CBO  
Collector-emitter capacitance  
C
6.0  
pF  
CE  
1)  
Indicates JEDEC registered values  
Coupler  
Parameter  
Test condition  
Part  
Symbol  
Min  
Typ.  
Max  
0.5  
Unit  
V
1)  
Peak, 60 Hz  
4N25  
V
V
V
V
2500  
Isolation voltage  
IO  
IO  
IO  
IO  
4N26  
4N27  
4N28  
1500  
1500  
500  
V
V
V
V
Saturation voltage, collector-  
emitter  
I
= 2.0 mA, I = 50 mA  
V
CE(sat)  
CE  
F
1)  
V
= 500 V  
R
100  
GΩ  
IO  
IO  
Resistance, input output  
Capacitance (input-output)  
f = 1.0 MHz  
C
0.5  
pF  
IO  
1)  
Indicates JEDEC registered values  
Current Transfer Ratio  
Parameter  
Test condition  
= 10 V, I = 10 mA  
Part  
Symbol  
Min  
20  
Typ.  
50  
Max  
Unit  
%
1)  
V
4N25  
CTR  
CTR  
CTR  
CTR  
DC Current Transfer Ratio  
CE  
F
DC  
DC  
DC  
DC  
4N26  
4N27  
4N28  
20  
10  
10  
50  
30  
30  
%
%
%
1)  
Indicates JEDEC registered value  
Document Number 83725  
Rev. 1.4, 26-Jan-05  
www.vishay.com  
3
4N25/ 4N26/ 4N27/ 4N28  
Vishay Semiconductors  
Switching Characteristics  
Parameter  
Test condition  
Symbol  
t , t  
Min  
Typ.  
2.0  
Max  
Unit  
Rise and fall times  
V
= 10 V, I = 10 mA, R = 100 Ω  
µs  
CE  
F
L
r
f
Typical Characteristics (Tamb = 25 °C unless otherwise specified)  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
1.5  
1.0  
0.5  
0.0  
Normalized to:  
Vce=10 V, I =10 mA, T =25°C  
F
A
T
= –55°C  
= 25°C  
CTRce(sat) Vce=0.4 V  
A
T
A
T
=50°C  
A
T
= 85°C  
A
NCTR(SAT)  
NCTR  
.1  
1
10  
100  
.1  
1
10  
100  
I - LED Current - mA  
F
I
- Forward Current - mA  
F
i4n25_01  
i4n25_03  
Figure 1. Forward Voltage vs. Forward Current  
Figure 3. Normalized Non-saturated and Saturated CTR vs. LED  
Current  
1.5  
1.0  
0.5  
0.0  
1.5  
Normalized to:  
Normalized to:  
Vce=10 V, I =10 mA, T =25°C  
Vce=10 V, I =10 mA, T =25°C  
F
A
F
A
CTRce(sat) Vce=0.4 V  
CTRce(sat) Vce=0.4 V  
1.0  
0.5  
0.0  
T
=70°C  
A
T
A
=25°C  
NCTR(SAT)  
NCTR  
NCTR(SAT)  
NCTR  
.1  
1
10  
100  
0
1
10  
100  
I
- LED Current - mA  
F
I
- LED Current - mA  
F
i4n25_02  
i4n25_04  
Figure 2. Normalized Non-Saturated and Saturated CTR vs. LED  
Current  
Figure 4. Normalized Non-saturated and saturated CTR vs. LED  
Current  
www.vishay.com  
4
Document Number 83725  
Rev. 1.4, 26-Jan-05  
4N25/ 4N26/ 4N27/ 4N28  
Vishay Semiconductors  
1.5  
1.0  
0.5  
0.0  
1.5  
Normalized to:  
Vce=10 V, I =10 mA, T =25°C  
CTRce(sat) Vce = 0.4 V  
Normalized to:  
F
A
Vcb=9.3 V, I =10 mA, T =25°C  
F
A
1.0  
0.5  
0.0  
T
A
=85°C  
25°C  
50°C  
70°C  
NCTR(SAT)  
NCTR  
.1  
1
10  
100  
.1  
1
10  
I - LED Current - mA  
F
100  
I
- LED Current - mA  
F
i4n25_05  
i4n25_08  
Figure 5. Normalized Non-saturated and saturated CTR vs. LED  
Current  
Figure 8. Normalized CTRcb vs. LED Current and Temp.  
35  
30  
10  
Normalized to:  
I =10 mA, T =25°C  
F
A
25  
50°C  
1
20  
70°C  
15  
25°C  
85°C  
10  
5
0.1  
Nib, T =–20°C  
A
Nib, T = 25°C  
A
Nib, T = 50°C  
A
0
Nib, T = 70°C  
A
0
10  
20  
30  
40  
50  
60  
0.01  
.1  
1
10  
100  
I
- LED Current - mA  
F
i4n25_06  
i4n25_09  
I
- LED Current - mA  
F
Figure 6. Collector-Emitter Current vs. Temperature and LED  
Current  
Figure 9. Normalized Photocurrent vs. I and Temp.  
F
5
1.2  
10  
70°C  
4
10  
1.0  
0.8  
0.6  
0.4  
3
10  
25°C  
2
–20°C  
10  
1
0
V
= 10 V  
ce  
10  
10  
10  
10  
Normalized to:  
Typical  
Ib=20 µA, Vce=10 V, T =25°C  
A
–1  
–2  
–20  
0
T
20  
40  
60  
80  
100  
1
10  
100  
1000  
- Ambient Temperature - °C  
A
Ib - Base Current - µA  
i4n25_07  
i4n25_10  
Figure 7. Collector-Emitter Leakage Current vs.Temp.  
Figure 10. Normalized Non-saturated HFE vs. Base Current and  
Temperature  
Document Number 83725  
Rev. 1.4, 26-Jan-05  
www.vishay.com  
5
4N25/ 4N26/ 4N27/ 4N28  
Vishay Semiconductors  
1.5  
Normalized to:  
Vce=10 V, Ib=20 µA  
V
= 5.0 V  
CC  
50°C  
T
=25°C  
A
70°C  
25°C  
1.0  
F=10 KHz,  
DF=50%  
R
L
V
–20°C  
O
0.5  
0.0  
I
=1 0 mA  
F
Vce=0.4  
V
1
10  
100  
1000  
i4n25_11  
i4n25_14  
Ib - Base Current - µA  
Figure 11. Normalized HFE vs. Base Current and Temp.  
Figure 14. Switching Schematic  
1000  
2.5  
2.0  
I
V
=10 mA,T =25°C  
A
CC  
F
=5.0 V, Vth=1.5 V  
t
PHL  
100  
10  
1.5  
1.0  
t
PLH  
1
.1  
1
10  
100  
RL - Collector Load Resistor - kΩ  
i4n25_12  
Figure 12. Propagation Delay vs. Collector Load Resistor  
IF  
tD  
tR  
VO  
tPLH  
=1.5 V  
VTH  
tF  
tS  
tPHL  
i4n25_13  
Figure 13. Switching Timing  
www.vishay.com  
6
Document Number 83725  
Rev. 1.4, 26-Jan-05  
4N25/ 4N26/ 4N27/ 4N28  
Vishay Semiconductors  
Package Dimensions in Inches (mm)  
For 4N25/26/27..... see DIL300-6 Package dimension in the Package Section.  
For 4N28 and for products with an option designator (e.g. 4N25-X001 or 4N26-X007)..... see DIP-6 Package dimensions in the Package  
Section.  
DIL300-6 Package Dimensions  
14770  
DIP-6 Package Dimensions  
pin one ID  
2
5
1
6
3
4
.248 (6.30)  
.256 (6.50)  
ISO Method A  
.335 (8.50)  
.343 (8.70)  
.300 (7.62)  
typ.  
.048 (0.45)  
.022 (0.55)  
.039  
(1.00)  
Min.  
.130 (3.30)  
.150 (3.81)  
18°  
4°  
.114 (2.90)  
.130 (3.0)  
typ.  
.031 (0.80) min.  
3°–9°  
.010 (.25)  
typ.  
.031 (0.80)  
.035 (0.90)  
.018 (0.45)  
.022 (0.55)  
.300–.347  
(7.62–8.81)  
.100 (2.54) typ.  
i178004  
Document Number 83725  
Rev. 1.4, 26-Jan-05  
www.vishay.com  
7
4N25/ 4N26/ 4N27/ 4N28  
Vishay Semiconductors  
Option 7  
Option 6  
Option 9  
.300 (7.62)  
TYP.  
.407 (10.36)  
.391 (9.96)  
.375 (9.53)  
.395 (10.03)  
.307 (7.8)  
.291 (7.4)  
.300 (7.62)  
ref.  
.028 (0.7)  
MIN.  
.180 (4.6)  
.160 (4.1)  
.0040 (.102)  
.0098 (.249)  
.012 (.30) typ.  
.315 (8.0)  
MIN.  
.020 (.51)  
.040 (1.02)  
.014 (0.35)  
.010 (0.25)  
.400 (10.16)  
.430 (10.92)  
.331 (8.4)  
MIN.  
15° max.  
18450  
.315 (8.00)  
min.  
.406 (10.3)  
MAX.  
www.vishay.com  
Document Number 83725  
Rev. 1.4, 26-Jan-05  
8
4N25/ 4N26/ 4N27/ 4N28  
Vishay Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and  
operatingsystems with respect to their impact on the health and safety of our employees and the public, as  
well as their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use  
of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
Document Number 83725  
Rev. 1.4, 26-Jan-05  
www.vishay.com  
9
厂商 型号 描述 页数 下载

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