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IXSN35N100U1

型号：

IXSN35N100U1

描述：

IGBT与二极管 - 高短路SOA能力[ IGBT with Diode - High Short Circuit SOA Capability ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

84 K

下载PDF手册
IGBT with Diode  
IXSN 35N100U1 VCES  
= 1000 V  
= 38 A  
IC25  
VCE(sat) = 3.5 V  
High Short Circuit SOA Capability  
3
2
4
1
Symbol  
TestConditions  
Maximum Ratings  
miniBLOC, SOT-227 B  
1
VCES  
VCGR  
TJ = 25°C to 150°C  
1000  
1000  
V
A
2
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
4
IC25  
IC90  
ICM  
TC = 25°C  
38  
25  
50  
A
A
A
3
TC = 90°C  
1 = Emitter,  
2 = Gate,  
3 = Collector  
TC = 25°C, 1 ms  
4 = Kelvin Emitter  
SSOA  
(RBSOA)  
VGE= 15 V, TVJ = 125°C, RG = 22 Ω  
Clamped inductive load, L = 30 µH  
ICM = 50  
@ 0.8 VCES  
A
Features  
tSC  
(SCSOA)  
VGE= 15 V, VCE = 0.6 • VCES, TJ = 125°C  
RG = 22 Ω, non repetitive  
10  
µs  
●
International standard package  
miniBLOC (ISOTOP) compatible  
Isolation voltage 3000 V~  
2nd generation HDMOSTM process  
- for high short circuit SOA  
Low VCE(sat)  
●
●
PC  
TC = 25°C  
205  
W
VISOL  
50/60 Hz  
IISOL ≤ 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
●
- for minimum on-state conduction  
losses  
MOS Gate turn-on  
- drive simplicity  
Fast RecoveryEpitaxial Diode  
(FRED)  
- short trr and IRM  
Low collector-to-case capacitance  
(< 50 pF)  
TJ  
-40 ... +150  
150  
°C  
°C  
°C  
●
●
TJM  
Tstg  
-40 ... +150  
Md  
Mounting torque  
Terminal connection torque (M4)  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
●
Weight  
30  
g
- reducesd RFI  
Low package inductance (< 10 nH)  
●
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
- easy to drive and to protect  
min. typ. max.  
Applications  
●
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninterruptible power supplies (UPS)  
BVCES  
VGE(th)  
IC = 6 mA, VGE = 0 V  
IC = 10 mA, VCE = VGE  
1000  
5
V
V
●
8
●
●
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
750 µA  
15 mA  
●
Switch-mode and resonant-mode  
power supplies  
IGES  
VCE = 0 V, VGE = ±20 V  
±500 nA  
Advantages  
●
Space savings  
Easy to mount with 2 screws  
VCE(sat)  
IC = IC90, VGE = 15 V  
3.5  
V
●
●
High power density  
IXYS reserves the right to change limits, test conditions and dimensions.  
© IXYS Corporation. All rights reserved.  
93005C (7/94)  
IXYSCorporation  
3540 Bassett Street, Santa Clara CA 95054  
Phone: 408-982-0700, Fax: 408-496-0670  
IXYSSemiconductorGmbH  
Edisonstr. 15, D-68623Lampertheim  
Phone:+49-6206-503-0, Fax:+49-6206-503627  
IXSN 35N100U1  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
miniBLOC, SOT-227 B  
gfs  
IC = IC90; VCE = 20 V,  
10  
20  
S
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
IC(on)  
VGE = 15 V  
300  
A
Cies  
Coes  
Cres  
4.5  
0.5  
nF  
nF  
nF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
0.09  
M4 screws (4x) supplied  
Qg  
180  
45  
nC  
nC  
nC  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
120  
Dim.  
Millimeter  
Inches  
Inductive load, TJ = 125°C  
Min.  
Max.  
Min.  
Max.  
td(on)  
tri  
td(off)  
tfi  
80  
150  
800  
2000  
3.2  
ns  
ns  
A
B
31.5  
7.8  
31.7  
8.2  
1.241  
0.307  
1.249  
0.323  
IC = IC90, VGE = 15 V,  
VCE = 0.6 • VCES, Ron = 6.8 Ω, Roff = 22 Ω  
C
D
4.0  
4.1  
-
0.158  
0.162  
-
ns  
4.3  
0.169  
Remarks: Switching times may increase  
for VCE (Clamp) > 0.6 • VCES, higher TJ or  
increased RG  
E
F
4.1  
4.3  
0.162  
0.587  
0.169  
0.595  
ns  
14.9  
15.1  
G
H
30.1  
38.0  
30.3  
38.2  
1.186  
1.497  
1.193  
1.505  
Eon  
Eoff  
mJ  
mJ  
J
K
11.8  
8.9  
12.2  
9.1  
0.465  
0.351  
0.481  
0.359  
6.8  
L
M
0.75  
12.6  
0.85  
12.8  
0.030  
0.496  
0.033  
0.504  
RthJC  
RthCK  
0.61 K/W  
K/W  
N
O
25.2  
1.95  
25.4  
2.05  
0.993  
0.077  
1.001  
0.081  
0.05  
P
-
5.0  
-
0.197  
Reverse Diode (FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
IF = IC90, VGE = 0 V,  
2.3  
33  
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
IRM  
trr  
IF = IC90, VGE = 0 V, -diF/dt = 480 A/µs  
TJ = 125°C, VR = 360 V  
A
150  
ns  
RthJC  
0.7 K/W  
IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: 4,835,592 4,881,108 5,017,508 5,049,961 5,187,117 5,486,715  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSSemiconductorGmbH  
Edisonstr. 15, D-68623Lampertheim  
Phone:+49-6206-503-0, Fax:+49-6206-503627  
IXYSCorporation  
3540 Bassett Street, Santa Clara CA 95054  
Phone: 408-982-0700, Fax: 408-496-0670  
IXSN 35N100U1  
250  
A
150  
A
10  
V
15 V  
13 V  
TJ = 25°C  
TJ = 25°C  
TJ = 25°C  
15 V  
13 V  
IC  
IC  
V
200  
150  
100  
50  
CE(sat)  
IC = 12.5 A  
IC = 25 A  
IC = 50 A  
90  
60  
30  
0
6
11 V  
4
11 V  
9 V  
2
9 V  
0
0
0
5
10  
15  
20  
0
2
4
6
V 8  
6
8
10  
12  
14 V 16  
V
VGE  
Fig. 3 Typ. on-state characteristics  
VCE  
VCE  
Fig. 2 Typ. output characteristics  
Fig. 1 Typ. output characteristics  
1.2  
350  
IC  
1.2  
VGE(th)  
IC = 10 mA  
TJ = 25°C  
VCE = 30 V  
VCE(sat)  
norm.
A
norm.  
250  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
1.0  
0.9  
0.8  
0.7  
200  
150  
100  
50  
IC = 50 A  
IC = 25 A  
IC = 12.5 A  
0
-50  
0
50  
100  
150  
4
6
8
10 12 14 16  
V
-50  
0
50  
100  
150  
°C  
°C  
VGE  
TJ  
TJ  
Fig. 5 Typ. transfer characteristics  
Fig. 6  
of norm.  
Typ. temp. dependence VGE(th)  
Fig. 4 Typ. temp. dependence of VCE(sat)  
16  
10  
nF  
100  
A
IG = 40 mA  
V
1
VGE  
IC = 1 A  
VCE = 25 V  
C
ies  
12  
10  
8
10  
IC  
C
TJ = 125°C  
dV/dt < 6 V/ns  
RG = 22Ω  
Coes  
1
1
6
Cres  
4
0.1  
2
0
0.1  
0.01  
V
0
50  
100  
150 nC 200  
0
5
10  
15  
20 V 25  
0
200 400 600 800 1000  
QG  
VCE  
VCE  
Fig. 7 Typ. turn-on gate charge  
characteristics, VGE = f(QG)  
Fig. 8 Typ. capacitances  
Fig. 9 Reverse biased safe operating area  
© IXYS Corporation. All rights reserved.  
IXYSCorporation  
3540 Bassett Street, Santa Clara CA 95054  
Phone: 408-982-0700, Fax: 408-496-0670  
IXYSSemiconductorGmbH  
Edisonstr. 15, D-68623Lampertheim  
Phone:+49-6206-503-0, Fax:+49-6206-503627  
IXSN 35N100U1  
50  
10  
mJ  
8
14  
IRM  
IRM  
IRM  
mJ  
12  
A
40  
IC = 50 A  
IC = 25 A  
IRM  
10  
Eoff  
30  
6
8
6
4
2
0
IC = 50 A  
Eon  
IC = 25 A  
20  
4
2
0
IC = 12.5 A  
10  
0
IC = 12.5 A  
°C  
0
25  
50  
75  
100  
150  
0
25  
50  
75  
100  
125  
150  
°C  
TJ  
TJ  
Fig. 10 Typ. turn-on energy per pulse  
Fig. 11 Typ. turn-off energy per pulse  
65,5  
A
10  
mJ  
14  
mJ  
IRM  
IC = 50 A  
12  
10  
8
50  
8
IRM  
IRM  
IC = 50 A  
IC = 25 A  
37.5  
25  
6
IC = 25 A  
Eoff  
Eon  
6
4
2
0
4
2
0
IRM  
IC = 12.5 A  
12.5  
IC = 12.5 A  
20  
0
0
10  
30  
40  
50  
0
10  
20  
30  
40  
50  
RGoff  
RGon  
Fig. 12 Typ. turn-on energy per pulse  
Fig. 13 Typ. turn-off energy per pulse  
1
K/W  
Diode  
IGBT  
Single pulse  
0.1  
ZthJC  
0.01  
0.0001  
s
0.001  
0.01  
0.1  
1
10  
t
Fig. 14 Forward characteristic of  
reverse diode  
Fig. 15 Transient thermal resistance junction to case of IGBT and Diode  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSSemiconductorGmbH  
Edisonstr. 15, D-68623Lampertheim  
Phone:+49-6206-503-0, Fax:+49-6206-503627  
IXYSCorporation  
3540 Bassett Street, Santa Clara CA 95054  
Phone: 408-982-0700, Fax: 408-496-0670  
© IXYS Corporation. All rights reserved.  
IXYSCorporation  
3540 Bassett Street, Santa Clara CA 95054  
Phone: 408-982-0700, Fax: 408-496-0670  
IXYSSemiconductorGmbH  
Edisonstr. 15, D-68623Lampertheim  
Phone:+49-6206-503-0, Fax:+49-6206-503627  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSSemiconductorGmbH  
Edisonstr. 15, D-68623Lampertheim  
Phone:+49-6206-503-0, Fax:+49-6206-503627  
IXYSCorporation  
3540 Bassett Street, Santa Clara CA 95054  
Phone: 408-982-0700, Fax: 408-496-0670  
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