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IXSH35N120A

型号:

IXSH35N120A

描述:

高电压,高速IGBT[ High Voltage, High speed IGBT ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

4 页

PDF大小:

67 K

High Voltage,  
High speed IGBT  
IXSH 35N120A VCES  
= 1200 V  
= 70 A  
IC25  
VCE(sat) = 4 V  
Short Circuit SOA Capability  
Symbol  
TestConditions  
MaximumRatings  
TO-247 AD  
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
V
TJ = 25°C to 150°C; RGE = 1 MW  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
IC25  
IC90  
ICM  
TC = 25°C  
70  
35  
A
A
A
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
TC = 90°C  
TC = 25°C, 1 ms  
140  
SSOA  
(RBSOA)  
VGE= 15 V, TJ = 125°C, RG = 22 W  
Clamped inductive load, L = 30 mH  
ICM = 70  
@ 0.8 VCES  
A
tSC  
(SCSOA)  
VGE= 15 V, VCE = 0.6 • VCES, TJ = 125°C  
RG = 22 W, non repetitive  
10  
ms  
W
Features  
PC  
TC = 25°C  
300  
Internationalstandardpackage  
JEDEC TO-247  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
High frequency IGBT with guaranteed  
Short Circuit SOA capability  
Fast Fall Time for switching speeds  
up to 20 kHz  
TJM  
Tstg  
-55 ... +150  
Md  
Mountingtorque  
1.13/10 Nm/lb.in.  
2nd generation HDMOSTM process  
Low VCE(sat)  
Weight  
6
g
- forminimumon-stateconduction  
losses  
MOS Gate turn-on  
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
- drive simplicity  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
AC motor speed control  
DC servo and robot drive  
Uninterruptiblepowersupplies(UPS)  
Switch-modeandresonant-mode  
BVCES  
VGE(th)  
IC = 3 mA, VGE = 0 V  
IC = 4 mA, VCE = VGE  
1200  
4
V
V
6
8
powersupplies  
Welding  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
400 mA  
1.2 mA  
Advantages  
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
Easy to mount with 1 screw (TO-247)  
(isolatedmountingscrewhole)  
High power density  
VCE(sat)  
IC = IC90, VGE = 15 V  
4
V
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
92774E (12/96)  
1 - 4  
IXSH 35N120A  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD (IXSH) Outline  
gfs  
IC = IC90; VCE = 10 V,  
20  
26  
S
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
IC(on)  
VGE = 15 V, VCE = 10 V  
170  
A
Cies  
Coes  
Cres  
3750  
235  
60  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
150  
40  
190 nC  
60 nC  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
70  
100 nC  
Dim. Millimeter  
Inches  
Min. Max. Min. Max.  
Inductive load, TJ = 25°C  
td(on)  
tri  
td(off)  
tfi  
80  
150  
400  
500  
10  
ns  
ns  
A
B
19.81 20.32 0.780 0.800  
20.80 21.46 0.819 0.845  
IC = IC90, VGE = 15 V, L = 100 mH  
VCE = 0.8 VCES, RG = 2.7 W  
C
D
15.75 16.26 0.610 0.640  
3.55 3.65 0.140 0.144  
900 ns  
700 ns  
mJ  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
E
F
4.32 5.49 0.170 0.216  
,
5.4  
6.2 0.212 0.244  
Eoff  
G
H
1.65 2.13 0.065 0.084  
-
4.5  
-
0.177  
td(on)  
tri  
80  
150  
2.5  
400  
700  
15  
ns  
ns  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V, L = 100 mH  
VCE = 0.8 VCES, RG = 2.7 W  
J
K
1.0  
1.4 0.040 0.055  
10.8 11.0 0.426 0.433  
Eon  
td(off)  
tfi  
mJ  
ns  
L
M
4.7  
0.4  
5.3 0.185 0.209  
0.8 0.016 0.031  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
N
1.5 2.49 0.087 0.102  
,
ns  
Eoff  
mJ  
RthJC  
RthCK  
0.42 K/W  
K/W  
0.25  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 4  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
IXSH 35N120A  
Fig.1 Saturation Characteristics  
Fig.2 Output Characterstics  
70  
60  
50  
40  
30  
20  
10  
0
250  
200  
150  
100  
50  
13V  
VGE =15V  
TJ = 25°C  
VGE = 15V  
TJ = 25°C  
11V  
13V  
11V  
9V  
9V  
7V  
7V  
0
0
1
2
3
4
5
0
2
4
6
8
10 12 14 16 18 20  
VCE - Volts  
VCE - Volts  
Fig.3 Collector-Emitter Voltage  
vs. Gate-Emitter Voltage  
Fig.4 Temperature Dependence  
of Output Saturation Voltage  
10  
9
8
7
6
5
4
3
2
1
0
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
TJ = 25°C  
VGE=15V  
IC = 70A  
IC = 70A  
IC = 35A  
IC = 17.5A  
IC = 35A  
IC =1 7.5A  
8
9
10  
11  
12  
13  
14  
15  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
VGE - Volts  
Fig.5 Input Admittance  
Fig.6 Temperature Dependence of  
Breakdown and Threshold Voltage  
50  
40  
30  
20  
10  
0
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VCE = 10V  
VGE(th)  
IC = 4mA  
BVCES  
TJ = 125°C  
IC = 3mA  
TJ = 25°C  
TJ = - 40C  
4
5
6
7
8
9
10 11 12 13 14 15  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
VGE - Volts  
© 2000 IXYS All rights reserved  
3 - 4  
IXSH 35N120A  
Fig.7 Turn-Off Energy per Pulse and  
Fall Time on Collector Current  
Fig.8 Dependence of Turn-Off Energy  
Per Pulse and Fall Time on RG  
1250  
1000  
750  
25  
20  
15  
10  
5
1250  
1000  
750  
18  
TJ = 125°C  
TJ = 125°C  
RG = 10  
I
C = 35A  
17  
16  
15  
14  
tfi  
tfi  
500  
500  
Eoff  
Eoff  
250  
250  
0
10  
20  
30  
40  
50  
60  
70  
0
10  
20  
30  
40  
50  
IC - Amperes  
RG - Ohms  
Fig.9 Gate Charge Characteristic Curve  
Fig.10 Turn-Off Safe Operating Area  
15  
12  
9
100  
10  
IC = 35A  
VCE = 500V  
TJ = 125°C  
RG = 2.7  
dV/dt < 5V/ns  
1
6
0.1  
0.01  
3
0
0
50  
100  
150  
200  
0
200  
400  
600  
800 1000 1200  
QG - nanocoulombs  
VCE - Volts  
Fig.11 Transient Thermal Impedance  
1
0.1  
D=0.5  
D=0.2  
D=0.1  
D=0.05  
D=0.02  
D=0.01  
D = Duty Cycle  
0.01  
0.001  
Single Pulse  
0.00001  
0.0001  
0.001  
0.01  
Pulse Width - Seconds  
0.1  
1
10  
© 2000 IXYS All rights reserved  
4 - 4  
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