IXSK35N120AU1
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-264 AA Outline
gfs
IC = IC90; VCE = 10 V,
20
26
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
IC(on)
VGE = 15 V, VCE = 10 V
170
A
Cies
Coes
Cres
3900
295
60
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
150
40
190 nC
60 nC
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
A
A1
A2
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
70
100 nC
b
b1
b2
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
td(on)
80
150
400
500
10
ns
ns
Inductive load, TJ = 25°C
c
0.53
0.83
.021
1.020
.780
.033
1.030
.786
tri
td(off)
tfi
IC = IC90, VGE = 15 V,
L = 100 mH, VCE = 0.8 VCES, RG = 2.7 W
D
E
e
25.91 26.16
19.81 19.96
5.46 BSC
900 ns
700 ns
mJ
.215 BSC
J
0.00
0.00
0.25
0.25
.000
.000
.010
.010
K
Eoff
Note 1
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
P
3.17
3.66
.125
.144
td(on)
tri
80
150
8
ns
ns
Inductive load, TJ = 125°C
Q
Q1
R
R1
S
T
6.07
8.38
3.81
1.78
6.04
1.57
6.27
8.69
4.32
2.29
6.30
1.83
.239
.330
.150
.070
.238
.062
.247
.342
.170
.090
.248
.072
IC = IC90, VGE = 15 V,
L = 100 mH
Eon
td(off)
tfi
mJ
ns
400
700
15
VCE = 0.8 VCES, RG = 2.7 W
ns
Note 1
Eoff
mJ
RthJC
RthCK
0.42 K/W
K/W
0.15
Reverse Diode (FRED)
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VF
TestConditions
IF = IC90, VGE = 0 V, Pulse test,
2.35
36
V
t £ 300 ms, duty cycle d £ 2 %, TJ = 125°C
IRM
trr
IF = IC90, VGE = 0 V, -diF/dt = 480 A/ms
VR = 540 V
32
225
40
A
ns
TJ = 100°C
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25°C
60 ns
RthJC
0.65 K/W
IXSK 35N120AU1 characteristic curves are located in the IXSH 35N120A data
sheet, Publication No. D96001DE, pages 66 - 67.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 2
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
