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IXFN73N30

型号：

IXFN73N30

描述：

HiPerFET功率MOSFET[ HiPerFET Power MOSFETs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

133 K

下载PDF手册
HiPerFETTM  
Power MOSFETs  
V
I
R
DSS  
D25  
DS(on)  
IXFK 73 N 30 300 V  
IXFN 73 N 30 300 V  
73 A  
73 A  
45 mΩ  
45 mΩ  
t ≤ 200 ns  
rr  
N-Channel Enhancement Mode  
Avalanche Rated, High dv/dt, Low trr  
TO-264 AA (IXFK)  
Symbol  
TestConditions  
Maximum Ratings  
IXFK  
IXFN  
VDSS  
VDGR  
TJ = 25°C to 150°C  
300  
300  
300  
300  
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
(TAB)  
G
D
S
VGS  
Continuous  
Transient  
20  
30  
20  
30  
V
V
VGSM  
miniBLOC, SOT-227 B (IXFN)  
E153432  
ID25  
IDM  
IAR  
TC = 25°C  
73  
292  
40  
73  
292  
40  
A
A
A
S
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
G
EAR  
TC = 25°C  
30  
5
30  
5
mJ  
S
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2 W  
,
V/ns  
D
PD  
TC = 25°C  
500  
520  
W
G = Gate  
S = Source  
D=Drain  
TAB = Drain  
TJ  
-55 ... +150  
150  
-55 ... +150  
300  
°C  
°C  
°C  
Either Source terminal at miniBLOC can be used  
asMainorKelvinSource  
TJM  
Tstg  
Features  
Internationalstandardpackages  
l
TL  
1.6 mm (0.063 in) from case for 10 s  
50/60 Hz, RMS t = 1 min  
-
°C  
l
JEDEC TO-264 AA, epoxy meet  
UL94V-0,flammabilityclassification  
VISOL  
-
-
2500  
3000  
V~  
V~  
IISOL ≤ 1 mA  
t = 1 s  
l
miniBLOCwithAluminiumnitride  
isolation  
Low RDS (on) HDMOSTM process  
Ruggedpolysilicongatecellstructure  
Md  
Mountingtorque  
Terminalconnectiontorque  
0.9/6  
-
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
l
l
l
Weight  
10  
30  
g
UnclampedInductiveSwitching(UIS)  
rated  
l
Lowpackageinductance  
FastintrinsicRectifier  
l
Applications  
DC-DC converters  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
l
l
Synchronousrectification  
Batterychargers  
l
l
Switched-modeandresonant-mode  
power supplies  
DC choppers  
Temperatureandlightingcontrols  
Low voltage relays  
VDSS  
VGS = 0 V, ID = 1 mA  
VDS = VGS, ID = 8 mA  
300  
2
V
V
VGS(th)  
4
l
l
IGSS  
IDSS  
VGS = 20 VDC, VDS = 0  
200 nA  
400 uA  
l
VDS = 0.8 VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
2
mA  
Advantages  
Easy to mount  
Space savings  
High power density  
l
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
45 mΩ  
l
l
© 2001 IXYS All rights reserved  
92805J (11/01)  
IXFK 73N30  
IXFN 73N30  
TO-264 AA Outline  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
VDS = 10 V; ID = 0.5 ID25, pulse test  
50  
S
Ciss  
Coss  
Crss  
9000  
1500  
580  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
30  
80  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
RG = 1 Ω (External),  
100  
50  
A
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
A1  
A2  
b
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
Qg(on)  
Qgs  
360  
60  
nC  
nC  
nC  
b1  
b2  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
c
0.53  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
D
25.91 26.16  
Qgd  
180  
E
e
19.81 19.96  
5.46 BSC  
.215 BSC  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
RthJC  
RthCK  
TO-264 AA  
TO-264 AA  
0.25 K/W  
K/W  
K
0.15  
0.05  
L
20.32 20.83  
.800  
.090  
.820  
.102  
L1  
2.29  
3.17  
2.59  
3.66  
P
.125  
.144  
RthJC  
RthCK  
miniBLOC, SOT-227 B  
miniBLOC, SOT-227 B  
0.24 K/W  
K/W  
Q
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
Q1  
R
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
R1  
S6.04  
T
6.30  
1.57  
.238  
1.83  
.248  
.062  
.072  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
miniBLOC, SOT-227 B  
Symbol  
IS  
TestConditions  
VGS = 0 V  
73  
292  
1.5  
A
A
V
ISM  
Repetitive; pulse width limited by TJM  
VSD  
IF = 100 A, VGS = 0 V,  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
QRM  
IRM  
200 ns  
µC  
IF = IS, -di/dt = 100 A/µs, VR = 100 V  
2
40  
A
M4 screws (4x) supplied  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
B
31.50  
7.80  
31.88  
8.20  
1.240  
0.307  
1.255  
0.323  
C
D
4.09  
4.09  
4.29  
4.29  
0.161  
0.161  
0.169  
0.169  
E
F
4.09  
4.29  
0.161  
0.587  
0.169  
0.595  
14.91  
15.11  
G
H
30.12  
38.00  
30.30  
38.23  
1.186  
1.496  
1.193  
1.505  
J
11.68  
8.92  
12.22  
9.60  
0.460  
0.351  
0.481  
0.378  
K
L
0.76  
0.84  
0.030  
0.496  
0.033  
0.506  
M
12.60  
12.85  
N
O
25.15  
1.98  
25.42  
2.13  
0.990  
0.078  
1.001  
0.084  
P
4.95  
5.97  
0.195  
1.045  
0.235  
1.059  
Q
26.54  
26.90  
R
3.94  
4.42  
0.155  
0.174  
S4.72  
4.85  
0.186  
0.191  
T
24.59  
-0.05  
25.07  
0.1  
0.968  
0.987  
0.004  
U
-0.002  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
IXFK 73N30  
IXFN 73N30  
Fig. 1 Output Characteristics  
Fig. 2 Input Admittance  
160  
140  
120  
100  
80  
160  
140  
120  
100  
80  
8V  
7V  
VGS = 10V  
TJ = 25°C  
TJ = 25°C  
6V  
5V  
60  
60  
40  
40  
20  
20  
0
0
0
2
4
6
8
10  
12  
14  
0
1
2
3
4
5
6
7
8
9
10  
VDS - Volts  
VGS - Volts  
Fig. 3 RDS(on) vs. Drain Current  
Fig. 4 Temperature Dependence  
of Drain to Source Resistance  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
2.50  
2.25  
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
TJ = 25°C  
VGS = 10V  
ID = 40A  
V
GS = 15V  
0
40  
80  
120  
160  
200  
240  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
ID - Amperes  
Fig. 5 Drain Current vs.  
Case Temperature  
Fig. 6 Temperature Dependence of  
Breakdown and Threshold Voltage  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
BVDSS  
VGS(th)  
-50 -25  
0
25 50 75 100 125 150  
TC - Degrees C  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
© 2001 IXYS All rights reserved  
IXFK 73N30  
IXFN 73N30  
Fig.7 Gate Charge Characteristic Curve  
Fig.8 Capacitance Curves  
10  
8
10000  
9000  
8000  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
Ciss  
VDS = 150V  
ID = 42A  
IG = 10mA  
6
f = 1MHz  
DS = 25V  
V
4
Coss  
Crss  
2
0
0
50 100 150 200 250 300 350 400  
Gate Charge - nCoulombs  
0
5
10  
15  
20  
25  
VDS - Volts  
Fig.9 Source Current vs. Source  
to Drain Voltage  
160  
140  
120  
100  
80  
TJ = 125°C  
60  
40  
TJ = 25°C  
20  
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6  
VSD - Volts  
Fig.10 Transient Thermal Impedance  
0.1  
0.01  
0.001  
0.01  
0.1  
1
Time - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
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