8TT100
Vishay High Power Products
High Performance
Schottky Generation 5.0, 8 A
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
Base
cathode
2
• Extremely low reverse leakage
RoHS
COMPLIANT
• Optimized VF vs. IR trade off for high efficiency
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
1
3
• Submicron trench technology
TO-220AC
Cathode Anode
• Full lead (Pb)-free and RoHS compliant devices
• Designed and qualified for industrial level
APPLICATIONS
• High efficiency SMPS
• Automotive
PRODUCT SUMMARY
IF(AV)
8 A
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
VR
100 V
0.58 V
VF at 8 A at 125 °C
• Dc-to-dc systems
• Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
VRRM
VF
CHARACTERISTICS
VALUES
100
UNITS
V
8 Apk, TJ = 125 °C (typical)
Range
0.55
TJ
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
TJ = 25 °C
8TT100
UNITS
Maximum DC reverse voltage
VR
100
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward
current
IF(AV)
50 % duty cycle at TC = 163 °C, rectangular waveform
8
A
Following any rated
load condition and with
rated VRRM applied
5 µs sine or 3 µs rect. pulse
850
Maximum peak one cycle
non-repetitive surge current
IFSM
10 ms sine or 6 ms rect. pulse
210
67
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TJ = 25 °C, IAS = 1.5 A, L = 60 mH
mJ
A
Limited by frequency of operation and time pulse duration so
that TJ < TJ max. IAS at TJ max. as a function of time pulse
See fig. 8
IAS at
TJ max.
Document Number: 94536
Revision: 05-Sep-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
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