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IXSH20N60U1

型号：

IXSH20N60U1

描述：

低VCE （ sat）的IGBT与二极管，高速IGBT与二极管[ Low VCE(sat) IGBT with Diode, High Speed IGBT with Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

116 K

下载PDF手册
Not for new designs  
VCES  
IC25 VCE(sat)  
Low VCE(sat) IGBT with Diode  
High Speed IGBT with Diode  
IXSH 20 N60U1  
IXSH 20 N60AU1  
600 V 40 A 2.5 V  
600 V 40 A 3.0 V  
CombiPacks  
Short Circuit SOA Capability  
Symbol  
TestConditions  
Maximum Ratings  
TO-247 AD  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
IC25  
IC90  
ICM  
TC = 25°C  
40  
20  
80  
A
A
A
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
TC = 90°C  
TC = 25°C, 1 ms  
SSOA  
(RBSOA)  
VGE= 15 V, TJ = 125°C, RG = 82 Ω  
Clamped inductive load, L = 100 µH  
ICM = 40  
@ 0.8 VCES  
A
µs  
W
Features  
tSC  
(SCSOA)  
VGE= 15 V, VCE = 360 V, TJ = 125°C  
RG = 82 Ω, non repetitive  
10  
●
International standard package  
JEDEC TO-247 AD  
High frequency IGBT with  
●
PC  
TC = 25°C  
150  
guaranteed  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Short Circuit SOA capability  
IGBT and anti-parallel FRED in one  
TJM  
Tstg  
●
package  
-55 ... +150  
2nd generation HDMOSTM process  
●
Md  
Mounting torque  
1.13/10 Nm/lb.in.  
●
Low VCE(sat)  
- for low on-state conduction losses  
MOS Gate turn-on  
- drive simplicity  
Weight  
6
g
●
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Applications  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
●
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninterruptible power supplies (UPS)  
Switch-mode and resonant-mode  
power supplies  
●
●
●
BVCES  
VGE(th)  
IC = 1.75 mA, VGE = 0 V  
IC = 1.5 mA, VCE = VGE  
600  
3.5  
V
V
●
6.5  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
500 µA  
mA  
Advantages  
8
●
Space savings (two devices in one  
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
package)  
Easy to mount with 1 screw  
(isolated mounting screw hole)  
Reduces assembly time and cost  
●
VCE(sat)  
IC = IC90, VGE = 15 V  
20N60U1  
20N60AU1  
2.5  
3.0  
V
V
●
●
High power density  
91770D (4/96)  
IXYSCorporation  
3540 Bassett Street, Santa Clara CA 95054  
Phone: 408-982-0700, Fax: 408-496-0670  
IXYSSemiconductorGmbH  
Edisonstr. 15, D-68623Lampertheim  
Phone:+49-6206-503-0, Fax:+49-6206-503627  
IXSH 20N60U1  
IXSH 20N60AU1  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
gfs  
IC = IC90; VCE = 10 V,  
6
7
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
IC(on)  
VGE = 15 V, VCE = 10 V  
65  
A
Cies  
Coes  
Cres  
1800  
250  
45  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
90  
40  
65  
120 nC  
55 nC  
80 nC  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
1 = Gate  
2 = Collector  
3 = Emitter  
Tab = Collector  
Inductive load, TJ = 25°C  
IC = IC90, VGE = 15 V,  
L = 100 µH, VCE = 0.8 VCES  
RG = 39 Ω  
td(on)  
tri  
td(off)  
tfi  
100  
200  
450  
ns  
ns  
ns  
,
Remarks: Switching times  
20N60U1  
ns  
ns  
may increase for VCE (Clamp)  
> 0.8 • VCES, higher TJ or  
increased RG  
20N60AU1 350  
Eoff  
2.5  
mJ  
td(on)  
tri  
100  
200  
1
ns  
ns  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V,  
L = 100 µH  
Eon  
td(off)  
tfi  
mJ  
VCE = 0.8 VCES, RG = 39 Ω  
1000 ns  
Remarks: Switching times  
may increase for VCE (Clamp)  
> 0.8 • VCES, higher TJ or  
increased RG  
20N60U1  
20N60AU1  
1000 ns  
600 ns  
Eoff  
20N60U1  
20N60AU1  
9
3
mJ  
5 mJ  
RthJC  
RthCK  
0.83 K/W  
K/W  
0.25  
Reverse Diode (FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
IF = IC90, VGE = 0 V,  
1.6  
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
IRM  
trr  
IF = IC90, VGE = 0 V, -diF/dt = 240 A/µs  
VR = 360 V  
10  
TJ = 125°C 150  
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ = 25°C 35  
A
ns  
50 ns  
RthJC  
1 K/W  
IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: 4,835,592 4,881,108 5,017,508 5,049,961 5,187,117 5,486,715  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025  
IXSH 20N60U1  
IXSH 20N60AU1  
Fig. 1 Saturation Characteristics  
Fig. 2  
Output Characterstics  
40  
30  
20  
10  
0
70  
60  
50  
40  
30  
20  
10  
0
VGE = 15V  
TJ = 25°C  
TJ = 25°C  
VGE =15V  
13V  
11V  
13V  
11V  
9V  
7V  
9V  
7V  
0
1
2
3
4
5
0
2
4
6
8
10 12 14 16 18 20  
VCE - Volts  
VCE - Volts  
Fig. 3 Collector-Emitter Voltage  
vs. Gate-Emitter Voltage  
Fig. 4  
Temperature Dependence  
of Output Saturation Voltage  
10  
9
8
7
6
5
4
3
2
1
0
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
TJ = 25°C  
VGE = 15V  
I
C = 40A  
IC = 40A  
IC = 20A  
IC = 10A  
I
C = 20A  
IC = 10A  
8
9
10  
11  
12  
13  
14  
15  
-50 -25  
0
25 50  
75 100 125 150  
VGE - Volts  
TJ - Degrees C  
Fig. 5 Input Admittance  
Fig. 6  
Temperature Dependence of  
Breakdown and Threshold Volt.  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
40  
35  
30  
25  
20  
15  
10  
5
VCE = 10V  
BVCES  
IC = 3mA  
TJ = 125°C  
TJ = 25°C  
TJ = - 40°C  
VGE(th)  
IC = 1.5mA  
0
5
6
7
8
9
10 11 12 13 14 15  
-50 -25  
0
25 50  
75 100 125 150  
VGE - Volts  
TJ - Degrees C  
IXYSCorporation  
IXYSSemiconductorGmbH  
3540 Bassett Street, Santa Clara CA 95054  
Phone: 408-982-0700, Fax: 408-496-0670  
Edisonstr. 15, D-68623Lampertheim  
Phone:+49-6206-503-0, Fax:+49-6206-503627  
IXSH 20N60U1  
IXSH 20N60AU1  
Fig.7 Turn-Off Energy per Pulse and  
Fall Time on Collector Current  
Fig.8 Dependence of Turn-Off Energy  
Per Pulse and Fall Time on RG  
600  
500  
400  
300  
200  
100  
0
6
5
4
3
2
1
0
600  
500  
400  
300  
200  
100  
0
6
5
4
3
2
1
0
TJ = 125°C  
TJ = 125°C  
C = 20A  
RG = 22Ω  
I
tfi (-A)  
tfi (-A)  
hi-speed  
hi-speed  
Eoff (-A)  
hi-speed  
Eoff (-A)  
hi-speed  
0
10  
20  
30  
40  
0
20  
40  
60  
Rg - Ohms  
80  
100  
120  
IC - Amperes  
Fig.9 Gate Charge Characteristic Curve  
Fig.10  
Turn-Off Safe Operating Area  
15  
12  
9
100  
10  
IC = 20A  
VCE = 300V  
TJ = 125°C  
RG = 10Ω  
dV/dt < 6V/ns  
1
6
0.1  
0.01  
3
0
0
25  
50  
75  
100  
0
100  
200  
300  
VCE - Volts  
400  
500  
600  
Qg - nanocoulombs  
Fig.11 Transient Thermal Impedance  
1
D=0.5  
D=0.2  
D=0.1  
D = Duty Cycle  
0.1  
D=0.05  
D=0.02  
D=0.01  
Single Pulse  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXSH 20N60U1  
IXSH 20N60AU1  
Fig.12 Maximum Forward Voltage Drop  
Fig.13  
Peak Forward Voltage VFR and  
Forward  
Recovery Time t  
100  
80  
60  
40  
20  
0
25  
20  
15  
10  
5
1000  
fr  
TJ = 125°C  
IF = 37A  
800  
VFR  
TJ = 150°C  
TJ = 100°C  
600  
400  
TJ = 25°C  
200  
tfr  
0
0
0.5  
1.0  
1.5  
2.0  
2.5  
0
100  
200  
300  
400  
500  
600  
Voltage Drop - Volts  
diF /dt - A/µs  
Fig.14Junction Temperature Dependence  
off IRM and Qr  
Fig.15  
Reverse Recovery Chargee  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
4
3
2
1
0
TJ = 100°C  
R = 350V  
V
IF = 30A  
max.  
IRM  
typ.  
IF = 60A  
Qr  
IF = 30A  
IF = 15A  
0
40  
80  
120  
160  
1
10  
100  
1000  
TJ - Degrees C  
diF /dt - A/µs  
Fig.16 Peak Reverse Recovery Current  
Fig.17  
Reverse Recovery Time  
40  
30  
20  
10  
0
0.8  
0.6  
0.4  
0.2  
0.0  
IF = 30A  
max.  
TJ = 100°C  
IF = 30A  
TJ = 100°C  
VR = 350V  
VR = 350V  
max.  
typ.  
IF = 60A  
typ.  
IF = 60A  
IF = 30A  
IF = 15A  
IF = 30A  
IF = 15A  
200  
400  
600  
0
200  
400  
600  
diF /dt - A/µs  
diF /dt - A/µs  
IXYSCorporation  
3540 Bassett Street, Santa Clara CA 95054  
Phone: 408-982-0700, Fax: 408-496-0670  
IXYSSemiconductorGmbH  
Edisonstr. 15, D-68623Lampertheim  
Phone:+49-6206-503-0, Fax:+49-6206-503627  
IXSH 20N60U1  
IXSH 20N60AU1  
Fig.18 Diode Transient Thermal resistance junction to case  
1.00  
0.10  
0.01  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
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