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IXFX16N90

型号:

IXFX16N90

描述:

HiPerFET功率MOSFET[ HiPerFET Power MOSFETs ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

269 K

HiPerFETTM  
Power MOSFETs  
IXFH16N90  
IXFX16N90  
VDSS = 900 V  
ID25  
= 16 A  
RDS(  
= 0.65 W  
on  
)
N-Channel Enhancement Mode  
High dv/dt, Low trr, HDMOSTM Family  
trr £ 200 ns  
Preliminarydata  
Symbol  
TestConditions  
Maximum Ratings  
TO-247AD  
(IXFH)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
900  
900  
V
V
(TAB)  
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
IDM  
IAR  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
16  
64  
16  
A
A
A
PLUS247TM  
(IXFX)  
EAR  
TC = 25°C  
45  
5
mJ  
C (TAB)  
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
,
V/ns  
G
TJ 150°C, RG = 2 Ω  
D
PD  
TJ  
TC = 25°C  
360  
W
-55 ... +150  
°C  
Features  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
l
International standard packages  
Low RDS (on) HDMOSTM process  
Rugged polysilicon gate cell structure  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
Fast intrinsic Rectifier  
l
l
l
TL  
1.6 mm (0.062 in.) from case for 10 s  
Mounting torque  
300  
°C  
Md  
1.13/10 Nm/lb.in.  
Weight  
6
g
l
l
Applications  
l
DC-DC converters  
Battery chargers  
Switched-mode and resonant-mode  
Symbol  
TestConditions  
Characteristic Values  
l
(TJ = 25°C, unless otherwise specified)  
l
min. typ. max.  
power supplies  
DC choppers  
AC motor control  
Temperature and lighting controls  
l
VDSS  
VGS = 0 V, ID = 250µA  
900  
2.0  
V
V
l
VGS(th)  
VDS = VGS, ID = 5 mA  
4.5  
l
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±100 nA  
Advantages  
VDS = 0.8 • VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
25 µA  
250 µA  
l
Easy to mount with 1 screw (TO-247)  
(isolated mounting screw hole) or  
mounting clip or spring (PLUS 247TM)  
Space savings  
High power density  
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
Pulse test, t 300 µs, duty cycle d 2 %  
0.65  
l
l
© 1998 IXYS All rights reserved  
97547(2/98)  
IXFH 16N90  
IXFX 16N90  
TO-247 AD (IXFH) Outline  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
VDS = 10 V; ID = 0.5 • ID25, pulse test  
6
10  
S
1
2
3
Ciss  
Coss  
Crss  
4500  
430  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
150  
td(on)  
tr  
td(off)  
tf  
27  
30  
ns  
ns  
ns  
ns  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 2 (External),  
120  
30  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qg(on)  
Qgs  
220  
30  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Qgd  
85  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
RthJC  
RthCK  
0.35 K/W  
K/W  
20.80 21.46  
15.75 16.26  
0.25  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
P
3.55  
5.89  
3.65  
.140 .144  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Q
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Symbol  
TestConditions  
IS  
VGS = 0 V  
16  
64  
A
A
PLUS247TM Outline  
ISM  
Repetitive;  
pulse width limited by TJM  
VSD  
IF = IS, VGS = 0 V,  
1.5  
V
Pulse test, t 300 µs, duty cycle d 2 %  
trr  
TJ = 25°C  
TJ = 125°C  
200 ns  
350 ns  
QRM  
TJ = 25°C  
TJ = 125°C  
1
2
µC  
µC  
IF = IS  
-di/dt = 100 A/µs,  
VR = 100 V  
IRM  
TJ = 25°C  
TJ = 125°C  
10  
15  
A
A
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
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