HiPerFETTM
VDSS
ID25
RDS(on)
IXFH 76 N06-11
IXFH 76 N06-12
IXFH 76 N07-11
IXFH 76 N07-12
60V
60V
70V
70V
76 A 11 mW
76 A 12 mW
76 A 11 mW
76 A 12 mW
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
Preliminary data sheet
Symbol
VDSS
TestConditions
MaximumRatings
TO-247 AD
TJ = 25°C to 175°C
N06
N07
60
70
V
V
VDGR
TJ = 25°C to 175°C; RGS = 10 kW
N06
N07
60
70
V
V
(TAB)
VGS
Continuous
Transient
±20
±30
V
V
VGSM
ID25
ID119
IDM
TC = 25°C (Chip capability = 125 A)
TC = 119°C, limited by external leads
TC = 25°C, pulse width limited by TJM
TC = 25°C
76
76
A
A
A
A
G = Gate,
S = Source,
D = Drain,
TAB = Drain
304
100
IAR
Features
EAR
EAS
TC = 25°C
30
2
mJ
J
● Internationalstandardpackage
JEDEC TO-247 AD
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
5
V/ns
● Low RDS (on) HDMOSTM process
● Rugged polysilicon gate cell structure
● Unclamped Inductive Switching (UIS)
rated
PD
TC = 25°C
360
W
TJ
-55 ... +175
175
°C
°C
°C
TJM
Tstg
● Low package inductance
- easy to drive and to protect
● Fast intrinsic Rectifier
-55 ... +150
TL
1.6 mm (0.062 in.) from case for 10 s
Mountingtorque
300
°C
Md
1.15/10 Nm/lb.in.
Weight
6
g
Applications
●
DC-DC converters
Synchronousrectification
Battery chargers
Switched-modeandresonant-mode
Symbol
TestConditions
CharacteristicValues
●
(TJ = 25°C, unless otherwise specified)
●
min. typ. max.
●
powersupplies
DC choppers
Temperatureandlightingcontrols
Low voltage relays
VDSS
VGS = 0 V, ID = 250 mA
N06
N07
60
70
V
V
●
●
VGS(th)
IGSS
VDS = VGS, ID = 4 mA
2.0
3.4
V
●
VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
100 mA
500 mA
Advantages
●
Easy to mount with 1 screw
RDS(on)
VGS = 10 V, ID = 40 A
76N06/N07-11
76N06/N07-12
11 mW
12 mW
(isolatedmountingscrewhole)
Space savings
High power density
●
Pulse test, t £ 300 ms, duty cycle d £ 2 %
●
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92785H(12/98)
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