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BZX84C2V4ET1_09

型号：

BZX84C2V4ET1_09

描述：

齐纳稳压器225 mW的SOT- 23表面贴装[ Zener Voltage Regulators 225 mW SOT−23 Surface Mount ]

品牌：

ONSEMI[ ONSEMI ]

页数：

6 页

PDF大小：

150 K

下载PDF手册
BZX84C2V4ET1 Series  
Zener Voltage Regulators  
225 mW SOT−23 Surface Mount  
This series of Zener diodes is offered in the convenient, surface  
mount plastic SOT−23 package. These devices are designed to provide  
voltage regulation with minimum space requirement. They are well  
suited for applications such as cellular phones, hand held portables,  
and high density PC boards.  
http://onsemi.com  
3
1
Cathode  
Anode  
Specification Features  
• 225 mW Rating on FR−4 or FR−5 Board  
• Zener Breakdown Voltage Range − 2.4 V to 75 V  
• Package Designed for Optimal Automated Board Assembly  
• Small Package Size for High Density Applications  
• ESD Rating of Class 3 (>16 kV) per Human Body Model  
• Peak Power − 225 W (8 X 20 ms)  
3
1
2
SOT−23  
• Pb−Free Packages are Available  
CASE 318  
STYLE 8  
Mechanical Characteristics  
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
POLARITY: Cathode indicated by polarity band  
FLAMMABILITY RATING: UL 94 V−0  
MARKING DIAGRAM  
xxx M G  
G
1
MAXIMUM RATINGS  
xxx  
M
= Device Code  
= Date Code*  
Rating  
Symbol  
Max  
Unit  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
Peak Power Dissipation @ 20 ms (Note 1)  
P
225  
W
pk  
@ T ≤ 25°C  
L
*Date Code orientation may vary depending  
upon manufacturing location.  
Total Power Dissipation on FR−5 Board,  
P
D
(Note 2) @ T = 25°C  
225  
1.8  
mW  
mW/°C  
A
Derated above 25°C  
ORDERING INFORMATION  
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
556  
°C/W  
†
Device  
Package  
Shipping  
Total Power Dissipation on Alumina Sub-  
P
D
BZX84CxxxET1  
SOT−23  
3000/Tape & Reel  
3000/Tape & Reel  
strate, (Note 3) @ T = 25°C  
300  
2.4  
mW  
mW/°C  
A
Derated above 25°C  
BZX84CxxxET1G SOT−23  
(Pb−Free)  
Thermal Resistance, Junction−to−Ambient  
R
q
417  
°C/W  
°C  
JA  
BZX84CxxxET3  
SOT−23 10,000/Tape & Reel  
Junction and Storage Temperature Range  
T , T  
J
−65 to  
stg  
+150  
BZX84CxxxET3G SOT−23 10,000/Tape & Reel  
(Pb−Free)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Nonrepetitive current pulse per Figure 9.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
2. FR−5 = 1.0 X 0.75 X 0.62 in.  
3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking  
column of the Electrical Characteristics table on page 3 of  
this data sheet.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
July, 2009 − Rev. 6  
BZX84C2V4ET1/D  
 
BZX84C2V4ET1 Series  
ELECTRICAL CHARACTERISTICS  
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C  
A
I
unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)  
F
F
I
F
Symbol  
Parameter  
V
Reverse Zener Voltage @ I  
Reverse Current  
Z
ZT  
I
ZT  
Z
I
Maximum Zener Impedance @ I  
ZT  
V
Z
V
R
ZT  
V
I
V
F
R
ZT  
Reverse Leakage Current @ V  
Reverse Voltage  
R
R
I
V
R
I
F
Forward Current  
V
F
Forward Voltage @ I  
F
QV  
Maximum Temperature Coefficient of V  
Z
Z
C
Max. Capacitance @ V = 0 and f = 1 MHz  
R
Zener Voltage Regulator  
http://onsemi.com  
2
BZX84C2V4ET1 Series  
ELECTRICAL CHARACTERISTICS  
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)  
A
F
F
V
(V)  
Max  
Z2  
V
(V)  
= 5 mA  
@ I  
= 1  
mA  
V
(V)  
Reverse  
Leakage  
Current  
q
VZ  
(mV/k)  
Z1  
ZT2  
Z3  
Z
(W)  
@ I  
Z
(W)  
@ I  
Z
ZT3  
(W)  
@
C (pF)  
@
ZT1  
ZT2  
@ I  
@ I =20 mA  
ZT1  
(Note 4)  
ZT3  
(Note 4)  
(Note 4)  
@ I =5 mA  
ZT1  
V = 0  
ZT1  
=
ZT2  
=
R
I
V
(V)  
Device  
f =  
I =  
ZT3  
R
mA  
R
@
Min Nom Max  
Min Max  
Min  
Max  
Min Max  
Device*  
Marking  
1 MHz  
450  
450  
450  
450  
450  
450  
450  
260  
225  
200  
185  
155  
140  
135  
130  
130  
130  
130  
120  
110  
105  
100  
85  
5 mA  
100  
100  
95  
95  
90  
90  
90  
80  
60  
40  
10  
15  
15  
15  
15  
20  
20  
25  
30  
30  
40  
45  
55  
55  
70  
1 mA  
20 mA  
50  
50  
50  
40  
40  
30  
30  
15  
15  
10  
6
BZX84C2V4ET1, G  
BZX84C2V7ET1, G  
BZX84C3V0ET1, G  
BZX84C3V3ET1, G  
BZX84C3V6ET1, G  
BZX84C3V9ET1, G  
BZX84C4V3ET1, G  
BZX84C4V7ET1, G  
BZX84C5V1ET1, G  
BZX84C5V6ET1, G  
BZX84C6V2ET1, G  
BZX84C6V8ET1, G  
BZX84C7V5ET1, G  
BZX84C8V2ET1, G  
BZX84C9V1ET1, G  
BZX84C10ET1, G  
BZX84C11ET1, G  
BZX84C12ET1, G  
BZX84C13ET1, G  
BZX84C15ET1, G  
BZX84C16ET1, G  
BZX84C18ET1, G  
BZX84C20ET1, G  
BZX84C22ET1, G  
BZX84C24ET1, G  
BA1  
BA2  
BA3  
BA4  
BA5  
BA6  
BA7  
BA9  
BB1  
BB2  
BB3  
BB4  
BB5  
BB6  
BB7  
BB8  
BB9  
BC1  
BC2  
BC3  
BC4  
BC5  
BC6  
BC7  
BC8  
2.2  
2.5  
2.4  
2.7  
3.0  
3.3  
3.6  
3.9  
4.3  
4.7  
5.1  
5.6  
6.2  
6.8  
7.5  
8.2  
9.1  
10  
2.6  
2.9  
1.7  
1.9  
2.1  
2.3  
2.7  
2.9  
3.3  
3.7  
4.2  
4.8  
5.6  
6.3  
6.9  
7.6  
8.4  
2.1  
2.4  
2.7  
2.9  
3.3  
3.5  
4.0  
4.7  
5.3  
6.0  
6.6  
7.2  
7.9  
8.7  
9.6  
600  
600  
600  
600  
600  
600  
600  
500  
480  
400  
150  
80  
2.6  
3.0  
3.2  
3.6  
50  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
2.0  
2.0  
2.0  
4.0  
4.0  
5.0  
5.0  
6.0  
7.0  
8.0  
8.0  
8.0  
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
0
0
0
0
0
20  
10  
2.8  
3.2  
3.3  
3.9  
3.1  
3.5  
3.6  
4.2  
5.0  
5.0  
3.0  
3.0  
3.0  
2.0  
1.0  
3.0  
2.0  
1.0  
0.7  
0.5  
0.2  
0.1  
0.1  
0.1  
3.4  
3.8  
3.9  
4.5  
3.7  
4.1  
4.1  
4.7  
−3.5 −2.5  
−3.5  
4.0  
4.6  
4.4  
5.1  
0
4.4  
5.0  
4.5  
5.4  
−3.5 0.2  
−2.7 1.2  
4.8  
5.4  
5.0  
5.9  
5.2  
6.0  
5.2  
6.3  
−2  
0.4  
1.2  
2.5  
3.2  
3.8  
4.5  
5.4  
6.0  
7.0  
9.2  
2.5  
3.7  
4.5  
5.3  
6.2  
7.0  
8.0  
9.0  
10  
5.8  
6.6  
5.8  
6.8  
6.4  
7.2  
6.4  
7.4  
6
7.0  
7.9  
80  
7.0  
8.0  
6
7.7  
8.7  
80  
7.7  
8.8  
6
8.5  
9.6  
100  
150  
150  
150  
170  
200  
200  
225  
225  
250  
250  
8.5  
9.7  
8
9.4  
10.6  
11.6  
12.7  
14.1  
15.6  
17.1  
19.1  
21.2  
23.3  
25.6  
9.3 10.6  
10.2 11.6  
11.2 12.7  
9.4  
10.7  
11.8  
12.9  
14.2  
15.7  
17.2  
19.2  
21.4  
23.4  
25.7  
10  
10  
10  
15  
20  
20  
20  
20  
25  
25  
10.4  
11.4  
12.4  
13.8  
15.3  
16.8  
18.8  
20.8  
22.8  
11  
10.4  
11.4  
12.5  
13.9  
15.4  
16.9  
18.9  
20.9  
22.9  
12  
13  
12.3  
14  
11  
15  
13.7 15.5  
0.05 10.5  
13  
16  
15.2  
16.7  
17  
19  
0.05 11.2 10.4  
0.05 12.6 12.4  
14  
18  
16  
20  
18.7 21.1  
20.7 23.2  
22.7 25.5  
0.05  
14  
14.4  
18  
22  
0.05 15.4 16.4  
0.05 16.8 18.4  
20  
85  
24  
22  
80  
q
VZ  
Max  
(mV/k)  
Below  
V
@ I  
Below  
Reverse  
Leakage  
Current  
Z2  
Z
Z
Z
ZT3  
C (pF)  
ZT1  
ZT2  
V
Below  
=
V
Below  
= 10 mA  
@ I  
= 2  
Z1  
ZT2  
Z3  
ZT1  
Below  
@ I  
Below  
@ I  
Below  
@ I  
@ V  
R
@ I  
= 2 mA  
0.1 mA  
@ I  
mA  
ZT1  
ZT3  
= 0  
f =  
1 MHz  
ZT1  
=
ZT4  
=
ZT3  
I
V
(V)  
Device  
Marking  
=
R
R
@
Min Nom Max  
Min Max  
Min  
Max  
Min Max  
mA  
Device  
2 mA  
0.5 mA  
300  
300  
325  
350  
350  
375  
375  
400  
425  
450  
475  
500  
10 mA  
BZX84C27ET1, G  
BZX84C30ET1  
BC9  
BD1  
BD2  
BD3  
BD4  
BK6  
BD5  
BD6  
BD7  
BD8  
BD9  
BE1  
25.1  
28  
31  
34  
37  
40  
44  
48  
52  
58  
64  
70  
27  
30  
33  
36  
39  
43  
47  
51  
56  
62  
68  
75  
28.9  
32  
35  
38  
41  
46  
50  
54  
60  
66  
72  
79  
80  
25  
28.9  
32  
35  
38  
41  
46  
50  
54  
60  
66  
72  
79  
25.2  
28.1  
31.1  
34.1  
37.1  
40.1  
44.1  
48.1  
52.1  
58.2  
64.2  
70.3  
29.3  
32.4  
35.4  
38.4  
41.5  
46.5  
50.5  
54.6  
60.8  
67  
45  
0.05 18.9 21.4 25.3  
0.05 21 24.4 29.4  
70  
70  
70  
70  
45  
40  
40  
40  
40  
35  
35  
35  
80  
27.8  
30.8  
33.8  
36.7  
39.7  
43.7  
47.6  
51.5  
57.4  
63.4  
69.4  
50  
BZX84C33ET1, G  
BZX84C36ET1, G  
BZX84C39ET1, G  
BZX84C43ET1, G  
BZX84C47ET1, G  
BZX84C51ET1, G  
BZX84C56ET1, G  
BZX84C62ET1, G  
BZX84C68ET1, G  
BZX84C75ET1, G  
80  
55  
0.05 23.1 27.4 33.4  
0.05 25.2 30.4 37.4  
0.05 27.3 33.4 41.2  
0.05 30.1 37.6 46.6  
90  
60  
130  
150  
170  
180  
200  
215  
240  
255  
70  
80  
90  
0.05 32.9  
42  
51.8  
100  
110  
120  
130  
140  
0.05 35.7 46.6 57.2  
0.05 39.2 52.2 63.8  
0.05 43.4 58.8 71.6  
0.05 47.6 65.6 79.8  
0.05 52.5 73.4 88.6  
73.2  
80.2  
4. Zener voltage is measured with a pulse test current I at an ambient temperature of 25°C  
Z
* The “G” suffix indicates Pb−Free package available.  
http://onsemi.com  
3
 
BZX84C2V4ET1 Series  
TYPICAL CHARACTERISTICS  
8
7
6
5
4
3
100  
TYPICAL T VALUES  
TYPICAL T VALUES  
C
C
V @ I  
Z
ZT  
V @ I  
Z
ZT  
10  
2
1
0
−1  
−2  
−3  
1
2
3
4
5
6
7
8
9
10  
11  
12  
10  
100  
V , NOMINAL ZENER VOLTAGE (V)  
Z
V , NOMINAL ZENER VOLTAGE (V)  
Z
Figure 1. Temperature Coefficients  
Figure 2. Temperature Coefficients  
(Temperature Range −55°C to +150°C)  
(Temperature Range −55°C to +150°C)  
1000  
100  
10  
1000  
100  
10  
T = 255C  
75 V (MMBZ5267BLT1)  
91 V (MMBZ5270BLT1)  
J
I = 1 mA  
Z
I = 0.1 I  
Z(AC) Z(DC)  
f = 1 kHz  
5 mA  
20 mA  
75°C 25°C  
0.6 0.7  
0°C  
150°C  
1
1
1
10  
V , NOMINAL ZENER VOLTAGE  
100  
0.4  
0.5  
0.8  
0.9  
1.0  
1.1  
1.2  
V , FORWARD VOLTAGE (V)  
F
Z
Figure 3. Effect of Zener Voltage on  
Zener Impedance  
Figure 4. Typical Forward Voltage  
http://onsemi.com  
4
BZX84C2V4ET1 Series  
TYPICAL CHARACTERISTICS  
1000  
100  
1000  
T = 25°C  
A
0 V BIAS  
1 V BIAS  
100  
10  
1
+150°C  
BIAS AT  
50% OF V NOM  
0.1  
0.01  
Z
10  
1
+25°C  
−55°C  
0.001  
0.0001  
0.00001  
1
10  
100  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
V , NOMINAL ZENER VOLTAGE (V)  
Z
V , NOMINAL ZENER VOLTAGE (V)  
Z
Figure 5. Typical Capacitance  
Figure 6. Typical Leakage Current  
100  
10  
100  
10  
T = 25°C  
A
T = 25°C  
A
1
1
0.1  
0.01  
0.1  
0.01  
10  
30  
50  
70  
90  
0
2
4
6
8
10  
12  
V , ZENER VOLTAGE (V)  
Z
V , ZENER VOLTAGE (V)  
Z
Figure 8. Zener Voltage versus Zener Current  
(12 V to 91 V)  
Figure 7. Zener Voltage versus Zener Current  
(VZ Up to 12 V)  
100  
PEAK VALUE I  
@ 8 ms  
RSM  
t
r
90  
80  
70  
60  
50  
40  
30  
20  
PULSE WIDTH (t ) IS DEFINED  
P
AS THAT POINT WHERE THE  
PEAK CURRENT DECAY = 8 ms  
HALF VALUE I /2 @ 20 ms  
RSM  
t
P
10  
0
0
20  
40  
60  
80  
t, TIME (ms)  
Figure 9. 8 × 20 ms Pulse Waveform  
http://onsemi.com  
5
BZX84C2V4ET1 Series  
PACKAGE DIMENSIONS  
SOT−23 (TO−236)  
CASE 318−08  
ISSUE AN  
NOTES:  
D
1. DIMENSIONING AND TOLERANCING PER ANSI  
SEE VIEW C  
Y14.5M, 1982.  
3
2. CONTROLLING DIMENSION: INCH.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD  
FINISH THICKNESS. MINIMUM LEAD  
THICKNESS IS THE MINIMUM THICKNESS OF  
BASE MATERIAL.  
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW  
STANDARD 318−08.  
H
E
E
c
1
2
MILLIMETERS  
INCHES  
b
DIM  
A
A1  
b
c
D
E
e
L
L1  
MIN  
0.89  
0.01  
0.37  
0.09  
2.80  
1.20  
1.78  
0.10  
0.35  
NOM  
1.00  
0.06  
0.44  
0.13  
2.90  
1.30  
1.90  
0.20  
0.54  
MAX  
MIN  
NOM  
0.040  
0.002  
0.018  
0.005  
0.114  
0.051  
0.075  
0.008  
0.021  
MAX  
0.044  
0.004  
0.020  
0.007  
0.120  
0.055  
0.081  
0.012  
0.029  
0.25  
e
1.11  
0.10  
0.50  
0.18  
3.04  
1.40  
2.04  
0.30  
0.69  
0.035  
0.001  
0.015  
0.003  
0.110  
0.047  
0.070  
0.004  
0.014  
q
A
L
A1  
L1  
VIEW C  
H
2.10  
2.40  
2.64  
0.083  
0.094  
0.104  
E
STYLE 8:  
PIN 1. ANODE  
2. NO CONNECTION  
3. CATHODE  
SOLDERING FOOTPRINT*  
0.95  
0.037  
0.95  
0.037  
2.0  
0.079  
0.9  
0.035  
0.8  
0.031  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5773−3850  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
BZX84C2V4ET1/D  
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