IXSH10N60 IXSH10N60A
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
TO-247 AD Outline
min. typ.
max.
gfs
IC = IC90; VCE = 10 V,
2
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
P
IC(on)
VGE = 15 V, VCE = 10 V
50
A
Cies
Coes
Cres
750
125
30
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
Qge
Qgc
40
12
20
nC
nC
nC
e
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Dim.
Millimeter
Inches
Min. Max.
80
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
td(on)
tri
td(off)
tfi
100
200
ns
ns
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V,
L = 300 µH, VCE = 0.8 VCES
RG = 150Ω
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
250 750
ns
,
10N60A
10N60
175 410
720
ns
ns
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
Eoff
10N60A
10N60
0.75 1.2
mJ
mJ
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
Note 1
1.2
1.9
.780 .800
.177
td(on)
tri
100
200
1.0
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V,
L = 300 µH, VCE = 0.8 VCES
RG = 150 Ω
P
3.55
5.89
3.65
.140 .144
Q
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
Eon
td(off)
tfi
,
mJ
ns
300
10N60AU1 400
ns
Eoff
Note 1
10N60AU1
1.5
mJ
RthJC
RthCK
1.25 K/W
K/W
0.25
Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ
or RG values.
2. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
