IXSH15N120AU1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min
Typ.
Max.
TO-247AD (IXSH)
gfs
IC = IC90, VCE = 10 V,
6
7
S
Pulse test, t < 300 µs, duty cycle < 2 %
IC(on)
VGE = 15V, VCE = 10 V
65
A
C
VCE = 25 V, VGE = 0 V, f = 1 MHz
1800
160
45
pF
pF
pF
ies
Coes
Cres
Qg
IC = Ic90, VGE = 15 V, VCE = 0.5 VCES
75
20
35
nC
nC
nC
Qge
Qgc
td(on)
tri
td(off)
tfi
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100µH
RG = 82 Ω, VCLAMP = 0.8 VCES
Note 1
100
200
450
600
750
5.4
ns
ns
ns
ns
ns
mJ
tc
Eoff
td(on)
tri
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100µH
RG = 82 Ω
100
200
ns
ns
E(on)
td(off)
TBD
mJ
ns
VCLAMP = 0.8 VCES
tfi
Note 1
900
ns
tc
1200
14.5
ns
mJ
Eoff
RthJC
RthCK
0.83 K/W
K/W
0.25
Reverse Diode (FRED)
Characteristic Values
(TJ = 25ºC unless otherwise specified)
Min.
Typ.
Max.
VF
IF = IC90, VGE = 0V
2.3
V
Pulse test, t< 300 µs, duty cycle < 2% TJ = 125ºC
2.1
60
trr
IF = 1A; di/dt = -100A/µs; VR = 30V;
IF = IC90, VGE = 0V, -diF/dt = 240 A/µs
TJ = 100ºC, VR = 540V
TJ = 25ºC
40
16
ns
A
IRM
trr
18
300
ns
RthJC
1.0 K/W
Notes:
1) Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or RG values.
2) Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway.
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS Corporation
IXYS Semiconductor GmbH
3540 Bassett Street; Santa Clara, CA 95054
Tel: 408-982-0700; Fax: 408-496-0670
POB 1180; D-68619; Lampertheim, Germany
Tel: +49-6206-5030; Fax: +49-6206-503627
