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IXSH25N100

型号：

IXSH25N100

描述：

低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High Speed IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

106 K

下载PDF手册
VCES  
1000 V 50 A 3.5 V  
IXSH/IXSM 25 N100A 1000 V 50 A 4.0 V  
IC25 VCE(sat)  
Low VCE(sat) IGBT  
High Speed IGBT  
IXSH/IXSM 25 N100  
Short Circuit SOA Capability  
Symbol  
TestConditions  
Maximum Ratings  
TO-247 AD (IXSH)  
VCES  
VCGR  
TJ = 25°C to 150°C  
1000  
1000  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
IC25  
IC90  
ICM  
TC = 25°C  
50  
25  
A
A
A
TO-204 AE (IXSM)  
TC = 90°C  
TC = 25°C, 1 ms  
100  
SSOA  
(RBSOA)  
VGE= 15 V, TJ = 125°C, RG = 4.7 Ω  
Clamped inductive load, L = 30 µH  
ICM = 50  
@ 0.8 VCES  
A
tSC  
(SCSOA)  
VGE= 15 V, VCE = 0.6 • VCES, TJ = 125°C  
RG = 33 Ω, non repetitive  
10  
µs  
C
PC  
TC = 25°C  
200  
W
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
Md  
Mounting torque  
1.13/10 Nm/lb.in.  
●
International standard packages  
Guaranteed Short Circuit SOA  
capability  
●
Weight  
g
TO-204 = 18 g, TO-247 = 6  
●
Low VCE(sat)  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
- for low on-state conduction losses  
High current handling capability  
MOS Gate turn-on  
●
●
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
- drive simplicity  
Fast Fall Time for switching speeds  
●
up to 20 kHz  
BVCES  
VGE(th)  
IC = 3 mA, VGE = 0 V  
IC = 2.5 mA, VCE = VGE  
1000  
5
V
V
Applications  
8
●
AC motor speed control  
Uninterruptible power supplies (UPS)  
●
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
250 µA  
mA  
●
Welding  
1
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
Advantages  
Easy to mount with 1 screw (TO-247)  
●
VCE(sat)  
IC = IC90, VGE = 15 V  
25N100  
25N100A  
3.5  
4.0  
V
V
(isolated mounting screw hole)  
High power density  
●
IXYS reserves the right to change limits, test conditions and dimensions.  
© IXYS Corporation. All rights reserved.  
91548F (4/96)  
IXYSCorporation  
3540 Bassett Street, Santa Clara CA 95054  
Phone: 408-982-0700, Fax: 408-496-0670  
IXYSSemiconductorGmbH  
Edisonstr. 15, D-68623Lampertheim  
Phone:+49-6206-503-0, Fax:+49-6206-503627  
IXSH 25N100  
IXSM 25N100  
IXSH 25N100A IXSM 25N100A  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
TO-247 AD Outline  
min. typ. max.  
gfs  
IC = IC90; VCE = 10 V,  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
10  
17  
S
A
IC(on)  
VGE = 15 V, VCE = 10 V  
140  
Cies  
Coes  
Cres  
2850  
210  
50  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
112  
28  
130 nC  
40 nC  
75 nC  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
50  
1 = Gate  
2 = Collector  
3 = Emitter  
Tab = Collector  
td(on)  
tri  
td(off)  
tfi  
70  
580  
150  
ns  
ns  
ns  
Inductive load, TJ = 25°C  
IC = IC90, VGE = 15 V, L = 100 µH  
VCE = 0.8 VCES, RG = 4.7 Ω  
Remarks: Switching times  
25N100  
1200  
800  
ns  
ns  
may increase for  
25N100A  
VCE (Clamp) > 0.8 • VCES  
,
Eoff  
25N100  
25N100A  
10  
8
mJ  
mJ  
higher TJ or increased RG  
Inductive load, TJ =  
125°C  
td(on)  
tri  
70  
580  
4.2  
ns  
ns  
IC = IC90, VGE = 15 V,  
L = 100 µH  
Eon  
td(off)  
tfi  
mJ  
200  
550 ns  
VCE = 0.8 VCES  
,
25N100  
25N100A  
1500 3000 ns  
1000 1500 ns  
RG = 4.7 Ω  
TO-204AE Outline  
Remarks: Switching times  
may increase for  
VCE (Clamp) > 0.8 • VCES  
Eoff  
25N100  
25N100A  
15  
11  
mJ  
mJ  
,
higher TJ or increased RG  
RthJC  
RthCK  
0.63 K/W  
K/W  
0.25  
1 = Gate  
2 = Emitter  
Case = Collector  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSSemiconductorGmbH  
IXYSCorporation  
Edisonstr. 15, D-68623Lampertheim  
Phone:+49-6206-503-0, Fax:+49-6206-503627  
3540 Bassett Street, Santa Clara CA 95054  
IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: 4,835,592 4,881,108 5,017,508 5,049,961 5,187,117 5,486,715  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025  
IXSH 25N100  
IXSM 25N100  
IXSH 25N100A IXSM 25N100A  
Fig. 1 Saturation Characteristics  
Fig. 2  
Output Characterstics  
50  
40  
30  
20  
10  
0
180  
160  
140  
120  
100  
80  
13V  
VGE = 15V  
TJ = 25°C  
TJ = 25°C  
11V  
VGE =15V  
13V  
11V  
60  
9V  
7V  
40  
9V  
7V  
20  
0
0
1
2
3
4
5
0
2
4
6
8
10 12 14 16 18 20  
VCE - Volts  
VCE - Volts  
Fig. 3 Collector-Emitter Voltage  
vs. Gate-Emitter Voltage  
Fig. 4  
Temperature Dependence  
of Output Saturation Voltage  
10  
9
8
7
6
5
4
3
2
1
0
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
TJ = 25°C  
VGE = 15V  
IC = 50A  
IC = 50A  
I
C = 25A  
IC = 25A  
IC = 12.5A  
IC = 12.5A  
8
9
10  
11  
12  
13  
14  
15  
-50 -25  
0
25 50  
75 100 125 150  
VGE - Volts  
TJ - Degrees C  
Fig. 5 Input Admittance  
Fig. 6 Temperature Dependence of  
Breakdown and Threshold Voltage  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
50  
40  
30  
20  
10  
0
VCE = 10V  
VGE(th)  
IC = 2.5mA  
BVCES  
TJ = 125°C  
TJ = 25°C  
IC = 3mA  
TJ = - 40°C  
5
6
7
8
9
10 11 12 13 14 15  
-50 -25  
0
25  
50 75 100 125 150  
VGE - Volts  
TJ - Degrees C  
IXYSCorporation  
3540 Bassett Street, Santa Clara CA 95054  
Phone: 408-982-0700, Fax: 408-496-0670  
IXYSSemiconductorGmbH  
Edisonstr. 15, D-68623Lampertheim  
Phone:+49-6206-503-0, Fax:+49-6206-503627  
IXSH 25N100  
IXSM 25N100  
IXSH 25N100A IXSM 25N100A  
Fig.7 Turn-Off Energy per Pulse and  
Fall Time on Collector Current  
Fig.8 Dependence of Turn-Off Energy  
Per Pulse and Fall Time on RG  
1500  
1200  
900  
600  
300  
0
20  
18  
16  
14  
12  
10  
8
1500  
1200  
900  
600  
300  
0
10  
9
8
7
6
5
4
3
2
1
0
TJ = 125°C  
TJ = 125°C  
RG = 10Ω  
I
C = 25A  
tfi  
tfi  
Eoff  
6
Eoff  
4
2
0
10 15 20 25 30 35 40 45 50  
0
10 20 30 40 50 60 70 80 90 100  
IC - Amperes  
RG - Ohms  
Fig.9 Gate Charge Characteristic Curve  
Fig.10  
Turn-Off Safe Operating Area  
15  
12  
9
100  
10  
VCE = 500V  
I
C = 25A  
TJ = 125°C  
G = 4.7Ω  
R
dV/dt < 6V/ns  
1
6
0.1  
0.01  
3
0
0
25  
50  
75  
100  
125  
150  
0
200  
400  
600  
800  
1000  
QG- nanocoulombs  
VCE - Volts  
Fig.11 Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
D=0.5  
D=0.2  
D=0.1  
D=0.05  
D=0.02  
D=0.01  
D = Duty Cycle  
Single Pulse  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSSemiconductorGmbH  
IXYSCorporation  
Edisonstr. 15, D-68623Lampertheim  
Phone:+49-6206-503-0, Fax:+49-6206-503627  
3540 Bassett Street, Santa Clara CA 95054  
Phone: 408-982-0700, Fax: 408-496-0670  
© IXYS Corporation. All rights reserved.  
IXYSCorporation  
3540 Bassett Street, Santa Clara CA 95054  
Phone: 408-982-0700, Fax: 408-496-0670  
IXYSSemiconductorGmbH  
Edisonstr. 15, D-68623Lampertheim  
Phone:+49-6206-503-0, Fax:+49-6206-503627  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSSemiconductorGmbH  
Edisonstr. 15, D-68623Lampertheim  
Phone:+49-6206-503-0, Fax:+49-6206-503627  
IXYSCorporation  
3540 Bassett Street, Santa Clara CA 95054  
Phone: 408-982-0700, Fax: 408-496-0670  
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