IXSH 35N140A
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
IC = IC90; V = 10 V,
16
23
S
Pulse test, t C≤E 300 µs, duty cycle d ≤ 2 %
Cies
Coes
Cres
3000
235
60
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qg
Qge
Qgc
120
32
50
nC
nC
nC
td(on)
tri
td(off)
tfi
40
60
150
200
4.0
ns
ns
300 ns
450 ns
mJ
1 = Gate
Inductive load, TJ = 25°C
2 = Collector
3 = Emitter
Tab = Collector
IC = IC90, V = 15 V
V
CE = 960GVE , RG = 3.0 Ω
Eoff
td(on)
tri
Eon
td(off)
tfi
40
65
4
240
400
9.5
ns
ns
mJ
ns
ns
mJ
Inductive load, TJ = 125°C
IC = IC90, V = 15 V
V
CE = 960GVE , RG = 3.0 Ω
Eoff
RthJC
RthCK
0.42 K/W
K/W
0.25
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
