IXSN 55N120AU1
VCES
IC25
VCE(sat)
= 1200 V
= 110 A
HighVoltage
IGBT with Diode
=
4 V
Short Circuit SOA Capability
3
2
Preliminary data
4
1
miniBLOC, SOT-227 B
Symbol
TestConditions
MaximumRatings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
1200
1200
V
A
1
2
VGES
VGEM
Continuous
Transient
±20
±30
V
V
IC25
IC90
ICM
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
110
55
160
A
A
A
4
3
SSOA
(RBSOA)
VGE= 15 V, TVJ = 125°C, RG = 22 W
Clamped inductive load, L = 30 mH
ICM = 110
@ 0.8 VCES
A
tSC
(SCSOA)
VGE= 15 V, VCE = 0.6 • VCES, TJ = 125°C
RG = 22 W, non repetitive
10
ms
Features
PC
PD
TC = 25°C
IGBT
Diode
500
175
W
W
• Internationalstandardpackage
miniBLOC(ISOTOP)compatible
• Aluminium-nitrideisolation
- highpowerdissipation
• Isolation voltage 3000 V~
• Low VCE(sat)
VISOL
50/60 Hz
IISOL £ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
- forminimumon-stateconduction
losses
• Fast Recovery Epitaxial Diode
- short trr and IRM
Md
Mountingtorque
Terminalconnectiontorque(M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
• Low collector-to-case capacitance
(< 60 pF)
- reduces RFI
• Low package inductance (< 10 nH)
- easy to drive and to protect
Applications
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptiblepowersupplies(UPS)
• Switch-modeandresonant-mode
powersupplies
BVCES
VGE(th)
IC = 8 mA, VGE = 0 V
IC = 8 mA, VCE = VGE
1200
4
V
V
8
1
ICES
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
mA
16 mA
Advantages
IGES
VCE = 0 V, VGE = ±20 V
±200
nA
V
• Space savings
• Easy to mount with 2 screws
• High power density
VCE(sat)
IC = IC90, VGE = 15 V
4
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92520E(12/96)
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