IXSN80N60AU1
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
miniBLOC, SOT-227 B
IC = 60 A; V = 10 V,
46
S
Pulse test, t £ C3E00 ms, duty cycle d £ 2 %
Cies
Coes
Cres
8500
650
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
120
Qg
335
88
nC
nC
nC
M4 screws (4x) supplied
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Dim.
Millimeter
Min. Max.
31.50 31.88 1.240 1.255
Inches
Min.
Max.
158
A
B
7.80
8.20 0.307 0.323
Inductive load, TJ = 25°C
td(on)
tri
td(off)
tfi
140
220
300
450
10
ns
ns
C
D
4.09
4.09
4.29 0.161 0.169
4.29 0.161 0.169
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = 2.7 W
E
F
4.09
4.29 0.161 0.169
14.91 15.11 0.587 0.595
600 ns
600 ns
mJ
G
H
30.12 30.30 1.186 1.193
38.00 38.23 1.496 1.505
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
J
11.68 12.22 0.460 0.481
K
8.92
9.60 0.351 0.378
Eoff
L
0.76
0.84 0.030 0.033
M
12.60 12.85 0.496 0.506
25.15 25.42 0.990 1.001
td(on)
tri
140
220
8
ns
ns
N
O
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = 2.7 W
1.98
2.13 0.078 0.084
P
Q
4.95
5.97 0.195 0.235
26.54 26.90 1.045 1.059
Eon
td(off)
tfi
mJ
ns
R
S
3.94
4.72
4.42 0.155 0.174
4.85 0.186 0.191
520
550
13
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
T
U
24.59 25.07 0.968 0.987
-0.05 0.1 -0.002 0.004
ns
Eoff
mJ
RthJC
RthCK
0.25 K/W
K/W
0.05
Reverse Diode (FRED)
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VF
TestConditions
IF = 50 A, VGE = 0 V,
1.8
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IRM
trr
IF = 50 A, VGE = 0 V, -diF/dt = 480 A/ms
VR = 360 V
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25°C
19
175
35
A
ns
50 ns
TJ = 125°C
RthJC
0.80 K/W
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
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