PreliminaryDataSheet
VDSS
ID25
RDS(on)
trr
HiPerFETTM
IXFH8N80 800V
IXFH9N80 800V
8A
9A
1.1Ω
0.9Ω
250 ns
250 ns
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
TO-247 AD (IXFH)
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
800
800
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ
VGS
Continuous
Transient
±20
±30
V
V
TO-247 SMD*
VGSM
ID25
IDM
IAR
TC = 25°C
8N80
9N80
8N80
9N80
8N80
9N80
8
9
32
36
8
A
A
A
A
A
A
TC = 25°C, pulse width limited by TJM
TC = 25°C
D (TAB)
G
S
9
G = Gate
D
= Drain
EAR
TC = 25°C
18
5
mJ
S = Source
TAB = Drain
*Add suffix letter "S" for surface mountable
package
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
,
V/ns
PD
TC = 25°C
180
W
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
Features
-55 ... +150
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Md
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Applications
min. typ.
max.
• DC-DC converters
• Battery chargers
VDSS
VGS = 0 V, ID = 3 mA
800
V
VDSS temperature coefficient
0.088
%/K
• Switched-mode and resonant-mode
power supplies
• DC choppers
VGS(th)
VDS = VGS, ID = 2.5 mA
2
4.5
V
VGS(th) temperature coefficient
-0.257
%/K
• AC motor control
• Temperature and lighting controls
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100 nA
250 µA
Advantages
VDS = 0.8 VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
1
mA
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• Space savings
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2%
8N80
9N80
1.1
0.9
Ω
Ω
• High power density
© 1997 IXYS All rights reserved
96527A (8/97)
