IXFK90N20Q
IXFK90N20QS
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
TO-264 AA Outline
min. typ. max.
VDS = 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
60
S
Ciss
Coss
Crss
11000
1600
100
pF
pF
pF
td(on)
tr
td(off)
tf
30
30
55
12
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 1 Ω (External),
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
A1
A2
b
b1
b2
c
D
E
e
J
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
Qg(on)
Qgs
190
60
nC
nC
nC
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
60
0.53
0.83
.021
1.020
.780
.033
1.030
.786
25.91 26.16
19.81 19.96
5.46 BSC
RthJC
RthCK
TO-264 AA; SMD-264
TO-264AA
0.26
K/W
K/W
.215 BSC
0.15
0.00
0.00
0.25
0.25
.000
.000
.010
.010
K
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
P
3.17
3.66
.125
.144
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Q
Q1
R
R1
S
T
6.07
8.38
3.81
1.78
6.04
1.57
6.27
8.69
4.32
2.29
6.30
1.83
.239
.330
.150
.070
.238
.062
.247
.342
.170
.090
.248
.072
Symbol
IS
TestConditions
VGS = 0 V
100
400
1.3
A
ISM
Repetitive; pulse width limited by TJM
A
V
VSD
IF = 100 A, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
QRM
IRM
120
0.7
10
200
ns
µC
A
IF = IS, -di/dt = 100 A/µs, VR = 100 V
TO-264 SMD Outline
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
A
A1
4.70
2.59
5.31
3.00
.185
.102
.209
.118
b
b1
b2
0.94
2.21
2.79
1.40
2.59
3.20
.037
.087
.110
.055
.102
.126
C
D
0.43
25.58
19.30
0.74
26.59
20.29
.017
1.007
.760
.029
1.047
.799
E
e
5.46 BSC
.215 BSC
L
4.90
2.24
1.90
0.00
5.10
2.44
2.10
0.10
.193
.088
.075
.000
.201
.096
.083
.004
L1
L2
L3
P
3.10
3.51
.122
.138
Q
Q1
6.10
8.38
6.50
8.79
.240
.330
.256
.346
1 Gate
2, 4 Drain (collector)
3 Source (emitter)
R
3.94
R1 2.16
4.75
2.36
.155
.085
.187
.093
Note:
S
6.17
6.43
.243
.253
1. This drawing meets of dimensions$ requirement of JEDEC
outlines TO-264AA except L, L1, L2, L3. 2. All metal surface are solder plated except trimmed area.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
