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FZT593

型号:

FZT593

描述:

PNP硅高压晶体管[ PNP Silicon High Voltage Transistor ]

品牌:

KEXIN[ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]

页数:

2 页

PDF大小:

37 K

SMD Type  
Transistors  
PNP Silicon High Voltage Transistor  
FZT593  
SOT-223  
Unit: mm  
+0.2  
3.50  
-0.2  
+0.2  
6.50  
-0.2  
Features  
+0.2  
0.90  
-0.2  
+0.1  
3.00  
-0.1  
+0.3  
7.00  
-0.3  
4
1 Base  
2 Collector  
1
2
3
+0.1  
0.70  
-0.1  
3 Emitter  
2.9  
4.6  
4 Collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
ICM  
Rating  
Unit  
V
-120  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-100  
V
-5  
V
Peak Pulse Current  
-2  
A
Continuous Collector Current  
Base Current  
IC  
-1  
-200  
A
IB  
mA  
W
Ptot  
2
Power Dissipation at Tamb=25  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +150  
1
www.kexin.com.cn  
SMD Type  
Transistors  
FZT593  
Electrical Characteristics Ta = 25  
Parameter  
Breakdown Voltages  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Testconditons  
Min Typ. Max  
Unit  
V
IC=-100ìA  
IC=-10mA*  
IE=-100ìA  
VCB=-100V  
VEB=-4V  
-120  
-100  
-5  
Breakdown Voltages  
V
Breakdown Voltages  
V
Collector Cut-Off Current  
Emitter Cut-Off Current  
Collector-Emitter Cut-Off Current  
-100  
-100  
-100  
-0.2  
-0.3  
-1.1  
-1.0  
100  
100  
nA  
nA  
nA  
V
IEBO  
ICES  
VCES=-100V  
IC=-250mA,IB=-25mA*  
IC=-500mA IB=-50mA*  
IC=-500mA,IB=-50mA*  
IC=-1mA, VCE=-5V*  
IC=-1mA, VCE=-5V  
VCE(sat)  
Saturation Voltages  
V
VBE(sat)  
VBE(on)  
V
Base-Emitter Turn-on Voltage  
V
IC=-250mA,VCE=-5V*  
IC=-500mA, VCE=-5V*  
IC=-1A, VCE=-5V*  
Static Forward Current Transfer Ratio  
hFE  
100  
50  
300  
Transition Frequency  
Output Capacitance  
fT  
IC=-50mA, VCE=-10V,f=100MHz  
VCB=-10V, f=1MHz  
50  
MHz  
pF  
Cobo  
5
* Measured under pulsed conditions. Pulse width=300ìs. Duty cycle  
2%  
Marking  
Marking  
FZT593  
2
www.kexin.com.cn  
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