SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
ISSUE 3 - OCTOBER 1995
FZT604
FZT605
FEATURES
C
*
*
Guaranteed hFE Specified up to 2A
Fast Switching
E
PARTMARKING DETAIL -
DEVICE TYPE IN FULL
C
COMPLEMENTARY TYPES - FZT604 - FZT704
FZT605 - FZT705
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
FZT604
120
FZT605
140
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
100
120
V
10
4
V
Peak Pulse Current
A
Continuous Collector Current
Power Dissipation
IC
1.5
2
A
Ptot
W
°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
SYMBOL MIN. MAX. UNIT CONDITIONS.
PARAMETER
Collector-Base
Breakdown Voltage
FZT604
FZT605
V(BR)CBO 120
140
V
V
IC=100µA
IC=100µA
Collector-Emitter
Breakdown Voltage
FZT604
FZT605
V(BR)CEO 100
120
V
IC=10mA*
IC=10mA*
Emitter-Base Breakdown Voltage V(BR)EBO 10
V
IE=100µA
Collector Cut-Off
Current
FZT604
ICBO
0.01
10
VCB=100V
VCB=100V,T
µA
µA
=100°C
=100°C
FZT605
0.01
10
V
V
CB=120V
CB=120V,T
µA
µA
Emitter Cut-Off Current
IEBO
ICES
0.1
10
10
V
EB=8V
µA
µA
µA
Collector-Emitter
Cut-Off Current
FZT604
FZT605
VCES=100V
CES=120V
V
Collector-EmitterSaturation
Voltage
VCE(sat)
1.0,
1.5
V
V
IC=250mA, IB=0.25mA*
IC=1A, IB=1mA*
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
VBE(sat)
VBE(on)
hFE
1.8
1.7
V
V
IC=1A, IB=1mA*
IC=1A, VCE=5V*
Static Forward
Current Transfer Ratio
2K
5K
2K
0.5K
IC=50mA, VCE=5V
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
100K
IC=2A, VCE=5V*
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