SMD Type
Transistors
FZT653
Electrical Characteristics Ta = 25
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
Testconditons
Min Typ. Max
Unit
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
IC=100ìA
120
100
5
IC=10mA*
V
IE=100ìA
V
VCB=100V
0.1
10
ìA
ìA
ìA
V
Collector Cut-Off Current
ICBO
IEBO
VCB=100V,Tamb=100
VEB=4V
Emitter Cut-Off Current
0.1
0.3
0.5
1.25
1.0
IC=1A, IB=100mA*
IC=2A, IB=200mA*
IC=1A, IB=100mA*
IC=1A, VCE =2V*
IC=50mA, VCE =2V*
IC=500mA, VCE =2V*
IC=1A, VCE =2V*
IC=2A, VCE =2V*
IC=100mA, VCE =5V,f=100MHz
VCB=10V, f=1MHz
IC=500mA, VCC =10V
IB1=IB2=50mA
0.13
0.23
0.9
Collector-Emitter Saturation Voltage
VCE(sat)
V
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
VBE(sat)
VBE(on)
V
0.8
V
70
100
55
200
200
110
55
300
Static Forward Current Transfer Ratio
hFE
25
Transition Frequency
Output Capacitance
fT
Cobo
ton
140
175
MHz
pF
30
80
ns
Switching Times
toff
1200
ns
* Measured under pulsed conditions. Pulse Width=300ìs. Duty cycle 2%
Marking
Marking
FZT653
2
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