SMD Type
Transistors
FZT658
Electrical Characteristics Ta = 25
Parameter
Breakdown Voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Testconditons
Min Typ. Max
Unit
V
IC=100ìA
IC=10mA*
IE=100ìA
VCB=320V
VEB=4V
400
400
5
Breakdown Voltage
V
Breakdown Voltage
V
Collector Cut-Off Current
Emitter Cut-Off Current
100
100
0.3
0.25
0.5
0.9
1.0
50
nA
nA
V
IEBO
IC=20mA, IB=1mA*
Collector-Emitter Saturation Voltage
VCE(sat)
IC=50mA, IB=5mA*
V
IC=100mA, IB=10mA
IC=100mA, IB=10mA*
IC=100mA, VCE=5V*
IC=1mA, VCE=5V*
V
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
VBE(sat)
VBE(on)
V
V
Static Forward Current Transfer Ratio
hFE
IC=100mA, VCE=5V*
IC=200mA, VCE=10V*
IC=10mA, VCE=20V,f=20MHz
VCB=20V, f=1MHz
50
40
Transition Frequency
Output Capacitance
fT
Cobo
ton
50
MHz
pF
10
IC=100mA, VCC=100V
IB1=10mA, IB2=-20mA
130
3300
ns
Switching Times
toff
ns
* Measured under pulsed conditions. Pulse Width=300ìs. Duty cycle 2%
Marking
Marking
FZT658
2
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