SMD Type
Transistors
FZT751
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
-80
-60
-5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
V(BR)CBO IC=-100ìA
V(BR)CEO IC=-10mA
V(BR)EBO IE=-100ìA
V
V
VCB=-60V
ICBO
-0.1
-10
Collector Cut-Off Current
ìA
ìA
V
VCB=-60V,Ta = 100
Emitter Cut-Off Current
IEBO
VEB=-4V
-0.1
IC=-1A, IB=-100mA
IC=-3A, IB=-300mA
-0.15 -0.3
-0.45 -0.6
Collector-emitter saturation voltage *
VCE(sat)
Base-emitter saturation voltage *
Base-emitter ON voltage *
VBE(sat) IC=-1A, IB=-100mA
VBE(on) IC=-1A, VCE=-2V
IC=-50mA, VCE =-2V*
-0.9 -1.25
V
V
-0.8
200
200
170
150
140
-1.0
300
70
100
80
IC=-500mA, VCE =-2V*
hFE
IC=-1A, VCE =-2V*
Collector Cut-Off Current Transfer Ratio *
IC=-2A, VCE =-2V*
40
Transitional frequency
Output capacitance
Turn-on time
fT
IC=-100mA, VCE=-5V, f=100MHz
100
MHz
pF
Cobo
t(on)
t(off)
VCB=-10V, f=1MHz
IC=-500mA, VCC=-10V
IB1=IB2=-50mA
30
40
ns
Turn-off time
450
ns
* Pulse test: tp = 300 ìs; d
0.02.
Marking
Marking
FZT751
2
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