SMD Type
Transistors
FZT851
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
150
60
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
V(BR)CBO IC=100ìA
V(BR)CEO IC=10mA
V(BR)EBO IE=100ìA
V
6
V
VCB=120V
ICBO
50
1
nA
ìA
Collector Cut-Off Current
Emitter Cut-Off Current
VCB=120V,Ta = 100
IEBO
VEB=6V
10
nA
50
IC=0.1A, IB=5mA
IC=1A, IB=50mA
IC=2A, IB=50mA
IC=6A, IB=300mA
100
170
375
Collector-emitter saturation voltage *
VCE(sat)
mV
Base-emitter saturation voltage *
Base-Emitter Turn-On Voltage *
VBE(sat) IC=6A, IB=300mA
VBE(on) IC=6A, VCE=1V
IC=10mA, VCE=1V
1200 mV
1150 mV
100
100
75
200
200
120
50
IC=2A, VCE=1V*
hFE
IC=5A, VCE=1V*
300
Static Forward Current Transfer Ratio*
IC=10A, VCE=1V*
25
Transitional frequency
Output capacitance
Turn-on time
fT
IC=100mA, VCE=10V f=50MHz
130
45
MHz
pF
Cobo
t(on)
t(off)
VCB=10V, f=1MHz
IC=1A, VCC=10V
IB1=IB2=100mA
45
ns
Turn-off time
1100
ns
* Pulse test: tp = 300 ìs; d
0.02.
Marking
Marking
FZT851
2
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