SMD Type
Transistors
FZT857
Electrical Characteristics Ta = 25 unless otherwise stated
Parameter
Symbol
V(BR)CBO
V(BR)CER
V(BR)CEO
V(BR)EBO
Testconditons
Min
350
350
300
6
Typ
475
475
350
8
Max
Unit
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
IC=100ìA
V
IC=1ìA, RB 1KÙ
IC=10mA*
V
IE=100ìA
V
VCB=300V
50
1
nA
ìA
nA
ìA
nA
mV
mV
mV
mV
Collector Cut-Off Current
ICBO
VCB=300V,Tamb=100
VCB=300V
50
ICER
Collector Cut-Off Current R 1KÙ
Emitter Cut-Off Current
1
VCB=300V,Tamb=100
VEB=6V
IEBO
10
IC=500mA, IB=50mA*
IC=1A, IB=100mA*
IC=2A, IB=200mA*
IC=3.5A, IB=600mA*
IC=3.5A, IB=600mA*
IC=3.5A, VCE=10V*
IC=10mA, VCE=5V
IC=500mA, VCE=10V*
IC=2A, VCE=10V*
IC=3A, VCE=10V*
IC=100mA, VCE=10V,f=50MHz
VCB=20V, f=1MHz
IC=250mA, IB1=25mA
IB2=25mA, VCC=50V
100
155
230
345
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
VBE(sat)
VBE(on)
1250 mV
1.12
300
V
100
100
15
200
200
25
Static Forward Current Transfer Ratio
hFE
15
Transition Frequency
Output Capacitance
fT
Cobo
ton
80
MHz
pF
11
100
5300
ns
Switching Times
toff
ns
*Measured under pulsed conditions. Pulse width=300ìs. Duty cycle 2%
Marking
Marking
FZT857
2
www.kexin.com.cn
