SMD Type
Transistors
FZT953
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
V(BR)CBO IC=-100ìA
V(BR)CEO IC=-10mA
V(BR)EBO IE=-100ìA
-140 -170
-100 -120
V
-6
-8
V
VCB=-100V
ICBO
-50
-1
nA
ìA
Collector Cut-Off Current
Emitter Cut-Off Current
VCB=-100V,Ta = 100
IEBO
VEB=-6V
-10
nA
IC=-100mA, IB=-10mA
IC=-1A, IB=-100mA
IC=-2A, IB=-200mA
IC=-4A, IB=-400mA
-20
-90
-50
-115
Collector-emitter saturation voltage *
VCE(sat)
V
-160 -220
-300 -420
Base-emitter saturation voltage *
Base-emitter ON voltage *
VBE(sat) IC=-4A, IB=-400mA
VBE(on) IC=-4A, VCE=-1V
IC=-10mA, VCE=-1V*
-1010 -1170
-925 -1160
200
V
V
100
100
50
IC=-1A, VCE=-1V*
200
90
300
Static Forward Current Transfer *
hFE
IC=-3A, VCE=-1V*
IC=-4A, VCE=-1V*
30
50
IC=-10A, VCE=-1V*
IC=-100mA, VCE=-10V, f=50MHz
VCB=-10V, f=1MHz
IC=-2A, VCC=-10V
15
Transitional frequency
Output capacitance
Turn-on time
fT
125
65
MHz
pF
Cobo
t(on)
t(off)
110
460
ns
Turn-off time
IB1=IB2=-200mA
ns
* Pulse test: tp = 300 ìs; d
0.02.
2
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