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ZXTP03200BGTA

型号:

ZXTP03200BGTA

描述:

200V PNP低VCE ( sat)的晶体管[ 200V PNP Low VCE(sat) transistor ]

品牌:

ZETEX[ ZETEX SEMICONDUCTORS ]

页数:

8 页

PDF大小:

187 K

ZXTP03200BG  
200V PNP Low VCE(sat) transistor in SOT223  
Summary  
BVCEO > -200V  
BVECO > -2V  
IC(cont) = 2A  
VCE(sat) < -160mV @ -1A  
RCE(sat) = 135mΩ  
PD = 3W  
Description  
Packaged in the SOT223 outline this new 5th generation low  
saturation 200V PNP transistor offers extremely low on state  
losses making it ideal for use in DC-DC circuits and various  
driving and power management functions  
C
E
B
Features  
2 Amps continuous current  
Up to 5 Amps peak current  
Very low saturation voltage  
Enhanced switching performance  
Applications  
DC-DC conversion  
Ordering Information  
Pin out - top view  
Device  
Reel size  
(inches)  
Tape width  
(mm)  
Quantity  
per reel  
ZXTP03200BGTA  
7
12  
1000  
Device Marking  
ZXTP03200BG  
www.zetex.com  
www.diodes.com  
Issue 1 - August 2008  
© Diodes Incorporated 2008  
1
ZXTP03200BG  
Absolute Maximum Ratings  
Parameter  
Symbol  
Limit  
Unit  
V
CBO  
Collector-Base Voltage  
-220  
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
-200  
-7  
V
V
A
A
A
CEO  
V
EBO  
(a)  
I
-2  
C
Continuous Collector Current  
I
Base Current  
-1  
B
I
Peak Pulse Current  
-5  
CM  
(a)  
1.25  
10  
W
mW/°C  
Power Dissipation at TA =25°C  
Linear Derating Factor  
P
D
P
D
P
D
P
D
P
D
(b)  
1.65  
13.2  
W
mW/°C  
Power Dissipation at TA =25°C  
Linear Derating Factor  
(c)  
3
24  
W
mW/°C  
Power Dissipation at TA =25°C  
Linear Derating Factor  
(d)  
5.8  
46.5  
W
mW/°C  
Power Dissipation at TA =25°C  
Linear Derating Factor  
(e)  
11.9  
95.2  
W
mW/°C  
Power Dissipation at TC =25°C  
Linear Derating Factor  
T , T  
j
Operating and Storage Temperature Range  
-55 to 150  
stg  
°C  
Thermal Resistance  
Parameter  
Symbol  
Value  
Unit  
(a)  
R
θJA  
100  
°C/W  
Junction to Ambient  
(b)  
R
76  
°C/W  
°C/W  
°C/W  
°C/W  
Junction to Ambient  
θJA  
(c)  
R
θJA  
41.6  
21.5  
10.5  
Junction to Ambient  
(d)  
R
θJA  
Junction to Ambient  
(e)  
R
Junction to Lead  
θJL  
NOTES:  
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still  
air conditions.  
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.  
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.  
(d) As (c) above measured at t<5 seconds.  
(e) Junction to Lead from Collector Tab.Typical  
www.zetex.com  
www.diodes.com  
Issue 1 - August 2008  
© Diodes Incorporated 2008  
2
ZXTP03200BG  
Thermal Characteristics  
10  
VCE(sat)  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
See note (c)  
Limit  
1
See note (b)  
DC  
1s  
100m  
10m  
100ms  
10ms  
1ms  
100µs  
10  
See note (a)  
Single Pulse. Tamb=25°C  
See note (c)  
100m  
1
100  
0
20 40 60 80 100 120 140 160  
-VCE Collector-Emitter Voltage (V)  
Temperature (°C)  
Safe Operating Area  
Derating Curve  
Single Pulse. Tamb=25°C  
See note (c)  
40  
30  
20  
10  
0
See note (c)  
D=0.5  
100  
10  
1
Single Pulse  
D=0.2  
D=0.05  
D=0.1  
100µ 1m 10m 100m  
1
10  
100  
1k  
100µ 1m 10m 100m  
1
10  
100  
1k  
Pulse Width (s)  
Pulse Width (s)  
Transient Thermal Impedance  
Pulse Power Dissipation  
www.zetex.com  
www.diodes.com  
Issue 1 - August 2008  
© Diodes Incorporated 2008  
3
ZXTP03200BG  
Electrical Characteristics (at Tamb = 25°C unless otherwise stated)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit Conditions  
BV  
Collector-Base Breakdown  
Voltage  
-220  
-245  
V
V
V
V
CBO  
IC = -100μA  
BV  
Collector-Emitter Breakdown  
Voltage  
-220  
-200  
-7  
-245  
-225  
-8.4  
<1  
CER  
IC = -1µA, RBE< 1kΩ  
(*)  
BV  
IC = -10mA  
Collector-Emitter Breakdown  
voltage  
CEO  
BV  
Emitter-Base Breakdown  
Voltage  
EBO  
IE = -100μA  
I
V
V
= -200V  
Collector-Base Cut-off  
Current  
-50  
nA  
CBO  
CB  
= -200V,T  
=100˚C  
amb  
-0.5  
μA  
CB  
I
V
EB  
= -6V  
Emitter Cut-off Current  
<1  
-10  
nA  
EBO  
(*)  
V
I = -0.1A, I = -10mA  
C B  
Collector-Emitter Saturation  
Voltage  
-37  
-50  
mV  
mV  
mV  
mV  
CE(sat)  
(*)  
I = -0.5A, I = -25mA  
-130  
-135  
-180  
-155  
-160  
-275  
C
B
(*)  
I = -1A, I = -100mA  
C
B
(*)  
(*)  
I = -2A, I = -400mA  
C
B
V
I = -2A, I = -400mA  
C B  
Base-Emitter Saturation  
Voltage  
-955  
-1100  
mV  
BE(sat)  
(*)  
V
BE(on)  
I = -2A, V = -5V  
C CE  
Base-Emitter Turn-On  
Voltage  
-860  
-1000  
mV  
(*)  
h
I = -10mA, V = -5V  
Static Forward Current  
Transfer Ratio  
100  
100  
20  
195  
170  
50  
FE  
C
CE  
(*)  
(*)  
(*)  
I = -1A, V = -5V  
C
300  
CE  
I = -2A, V = -5V  
C
CE  
I = -5A, V = -5V  
C
5
CE  
I = -100mA, V = -10V  
Transition Frequency  
105  
MHz  
fT  
C
CE  
f = 50MHz  
(*)  
C
V
CB  
= -10V,f = 1MHz  
Output Capacitance  
Delay Time  
31  
21  
pF  
ns  
ns  
ns  
ns  
obo  
t
d
t
r
Rise Time  
18  
I = -1A, V = -50V,  
C
CC  
I
= -I = -100mA  
B2  
t
B1  
Storage Time  
Fall Time  
680  
75  
s
t
f
NOTES:  
(*) Measured under pulsed conditions. Pulse width 300μs; duty cycle 2%.  
www.zetex.com  
www.diodes.com  
Issue 1 - August 2008  
© Diodes Incorporated 2008  
4
ZXTP03200BG  
Typical Characteristics  
1
0.4  
0.3  
0.2  
0.1  
0.0  
Tamb=25°C  
IC/IB=10  
IC/IB=20  
100m  
10m  
IC/IB=10  
150°C  
100°C  
IC/IB=5  
1
25°C  
1
-55°C  
1m  
10m  
100m  
10m  
100m  
- IC Collector Current (A)  
- IC Collector Current (A)  
VCE(sat) v IC  
VCE(sat) v IC  
VCE=5V  
-55°C  
IC/IB=5  
1.0  
0.8  
0.6  
0.4  
0.2  
350  
300  
250  
200  
150  
100  
50  
150°C  
100°C  
25°C  
25°C  
150°C  
100°C  
100m  
-55°C  
0
1m  
10m  
100m  
1
1m  
10m  
1
- IC Collector Current (A)  
- IC Collector Current (A)  
hFE v IC  
VBE(sat) v IC  
700  
600  
500  
400  
300  
200  
100  
0
VCE=5V  
1.0  
0.8  
0.6  
0.4  
0.2  
-55°C  
f = 1MHz  
25°C  
Cibo  
150°C  
100°C  
Cobo  
10m  
100m  
1
10  
100  
1m  
10m  
100m  
1
- Voltage(V)  
- IC Collector Current (A)  
Capacitance v Voltage  
VBE(on) v IC  
www.zetex.com  
www.diodes.com  
Issue 1 - August 2008  
© Diodes Incorporated 2008  
5
ZXTP03200BG  
Intentionally left blank  
www.zetex.com  
www.diodes.com  
Issue 1 - August 2008  
© Diodes Incorporated 2008  
6
ZXTP03200BG  
Package Information – SOT223  
DIM  
Millimeters  
Inches  
DIM  
Millimeters  
Min Max  
2.30 BSC  
4.60 BSC  
Inches  
Min Max  
0.0905 BSC  
0.181 BSC  
Min  
-
Max  
1.80  
0.10  
0.84  
3.10  
0.33  
6.70  
Min  
Max  
A
A1  
b
b2  
C
D
-
0.071  
0.0008 0.004  
e
e1  
E
E1  
L
0.02  
0.66  
2.90  
0.23  
6.30  
0.026  
0.114  
0.009  
0.248  
0.033  
0.122  
0.013  
0.264  
6.70  
7.30  
0.264  
0.287  
3.30  
0.90  
-
3.70  
-
-
0.130  
0.355  
-
0.146  
-
-
-
www.zetex.com  
www.diodes.com  
Issue 1 - August 2008  
© Diodes Incorporated 2008  
7
ZXTP03200BG  
Definitions  
Product change  
Diodes Incorporated reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service.  
Customers are solely responsible for obtaining the latest relevant information before placing orders.  
Applications disclaimer  
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the  
user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by  
Diodes Inc. with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such  
use or otherwise. Diodes Inc. does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including  
negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss  
in the use of these circuit applications, under any circumstances.  
Life support  
Diodes Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written  
approval of the Chief Executive Officer of Diodes Incorporated . As used herein:  
A.  
Life support devices or systems are devices or systems which:  
1. are intended to implant into the body  
or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions  
for use provided in the labeling can be reasonably expected to result in significant injury to the user.  
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to  
cause the failure of the life support device or to affect its safety or effectiveness.  
B.  
Reproduction  
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in  
writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating  
to the products or services concerned.  
Terms and Conditions  
All products are sold subjects to Diodes Inc. terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two  
when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.  
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.  
Quality of product  
Diodes Zetex Semiconductors Limited is an ISO 9001 and TS16949 certified semiconductor manufacturer.  
To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally  
authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com or www.diodes.com  
Diodes Inc. does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.  
ESD (Electrostatic discharge)  
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The  
possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage  
can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of  
being affected should be replaced.  
Green compliance  
Diodes Inc. is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements  
with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous  
substances and/or emissions.  
All Diodes Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE  
and ELV directives.  
Product status key:  
“Preview”  
“Active”  
Future device intended for production at some point. Samples may be available  
Product status recommended for new designs  
“Last time buy (LTB)”  
Device will be discontinued and last time buy period and delivery is in effect  
“Not recommended for new designs” Device is still in production to support existing designs and production  
“Obsolete”  
Production has been discontinued  
Datasheet status key:  
“Draft version”  
This term denotes a very early datasheet version and contains highly provisional  
information, which may change in any manner without notice.  
“Provisional version”  
“Issue”  
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.  
However, changes to the test conditions and specifications may occur, at any time and without notice.  
This term denotes an issued datasheet containing finalized specifications. However, changes to  
specifications may occur, at any time and without notice.  
Diodes sales offices  
Sales offices  
The Americas  
3050 E. Hillcrest Drive  
Westlake Village,  
Europe  
Taiwan  
7F, No. 50,  
Shanghai  
Shenzhen  
Korea  
Kustermannpark  
Balanstraße 59,  
D-81541 München  
Germany  
Rm. 606, No.1158  
Changning Road  
Shanghai, China  
Room A1103-04,  
ANLIAN Plaza, #4018  
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6 Floor, Changhwa B/D,  
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Issue 1 - August 2008  
© Diodes Incorporated 2008  
8
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