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1SS181

型号:

1SS181

描述:

低正向电压VF ( 3 ) = 0.92V (典型值)。> 快速反向恢复时间: TRR = 1.6ns (典型值)。[ Low forward voltage : VF(3)=0.92V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) ]

品牌:

HTSEMI[ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]

页数:

2 页

PDF大小:

341 K

1SS181  
SOT-23  
FEATURES  
y
y
Low forward voltage  
: VF(3)=0.92V(typ.)  
Fast reverse recovery time : trr=1.6ns(typ.)  
MARKING: A3  
1. CATHODE  
2. CATHODE  
3. ANODE  
Maximum Ratings @TA=25  
Parameter  
Symbol  
Limits  
85  
Unit  
Non-Repetitive Peak reverse voltage  
VRM  
VR  
V
V
80  
DC Blocking  
Voltage  
300  
Forward Continuous Current  
Average Rectified Output Current  
Power Dissipation  
IFM  
IO  
mA  
mA  
mW  
100  
150  
PD  
125  
Junction temperature  
TJ  
-55-125  
Storage temperature range  
TSTG  
Electrical Characteristics @TA=25℃  
Parameter  
Symbol  
V (BR)R  
VF1  
Min.  
Typ.  
Max. Unit  
Conditions  
80  
Reverse Breakdown Voltage  
V
V
V
IR=100μA  
0.61  
IF=1mA  
Forward voltage  
Reverse current  
VF2  
VF3  
IR1  
0.74  
0.92  
IF=10mA  
IF=100mA  
VR=30V  
1.2  
0.1  
V
uA  
0.5  
4.0  
IR2  
CT  
t r r  
uA  
pF  
ns  
VR=80V  
Capacitance between terminals  
Reverse recovery time  
2.2  
1.6  
VR=0,f=1MHz  
IF=IR=10mA,Irr=0.1×IR  
4.0  
1
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  
1SS181  
2
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  
厂商 型号 描述 页数 下载

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