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FZT949

型号：

FZT949

描述：

PNP硅平面高电流（高性能）晶体管[ PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS ]

品牌：

ZETEX[ ZETEX SEMICONDUCTORS ]

页数：

5 页

PDF大小：

219 K

下载PDF手册
SOT223 PNP SILICON PLANAR HIGH CURRENT  
(HIGH PERFORMANCE) TRANSISTORS  
FZT948  
FZT949  
ISSUE 2 - NOVEMBER 1995  
FEATURES  
*
*
*
*
*
Extremely low equivalent on-resistance; RCE(sat)  
6 Amps continuous current  
Up to 20 Amps peak current  
Very low saturation voltage  
Excellent hFE characteristics specified upto 20 Amps  
C
E
C
B
PARTMARKING DETAILS — DEVICE TYPE IN FULL  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
FZT948  
-40  
FZT949  
-50  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Peak Pulse Current  
-20  
-30  
V
-6  
V
-20  
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
IC  
-6  
-5.5  
A
Ptot  
3
W
°C  
Operating and Storage Temperature  
Range  
Tj:Tstg  
-55 to +150  
*The power which can be dissipated assuming the device is mounted in a typical manner on a  
P.C.B. with copper equal to 4 square inch minimum  
TBA  
FZT948  
ELECTRICAL CHARACTERISTICS (at T  
amb  
= 25°C unless otherwise stated)  
PARAMETER  
SYMBOL MIN. TYP.  
MAX. UNIT CONDITIONS.  
Collector-Base Breakdown  
Voltage  
V(BR)CBO  
V(BR)CER  
V(BR)CEO  
V(BR)EBO  
ICBO  
-40  
-40  
-20  
-6  
-55  
-55  
-30  
-8  
V
V
V
V
IC=-100µA  
Collector-Emitter  
Breakdown Voltage  
IC=-1µA, RB ≤1kΩ  
IC=-10mA*  
IE=-100µA  
Collector-Emitter  
Breakdown Voltage  
Emitter-Base Breakdown  
Voltage  
Collector Cut-Off Current  
Collector Cut-Off Current  
Emitter Cut-Off Current  
-50  
-1  
nA  
µA  
VCB=-30V  
VCB=-30V,  
Tamb=100°C  
ICER  
R ≤1kΩ  
-50  
-1  
nA  
µA  
VCB=-30V  
CB=-30V,  
V
Tamb=100°C  
IEBO  
-10  
nA  
VEB=-6V  
Collector-Emitter Saturation VCE(sat)  
Voltage  
-60  
-130  
-180  
-280  
-450  
mV  
mV  
mV  
mV  
IC=-0.5A, IB=-10mA*  
IC=-2A, IB=-200mA*  
IC=-4A, IB=-400mA*  
IC=-6A, IB=-250mA*  
-110  
-200  
-360  
Base-Emitter  
VBE(sat)  
VBE(on)  
hFE  
-1050 -1200 mV  
IC=-5A, IB=-300mA*  
Saturation Voltage  
Base-Emitter  
Turn-On Voltage  
-870  
-1050 mV  
300  
IC=-6A, VCE=-1V*  
Static Forward  
Current Transfer Ratio  
100  
100  
75  
200  
200  
160  
130  
40  
IC=-10mA, VCE =-1V  
IC=-1A, VCE =-1V*  
IC=-5A, VCE =-1V*  
IC=-10A, VCE =-1V*  
IC=-20A, VCE =-2V*  
60  
15  
Transition Frequency  
fT  
80  
MHz  
IC=-100mA, VCE=-10V  
f=50MHz  
Output Capacitance  
Switching Times  
Cobo  
163  
pF  
VCB=-10V, f=1MHz  
ton  
toff  
120  
126  
ns  
ns  
IC=-4A, IB1=-400mA  
IB2=400mA, VCC=-10V  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%  
Spice parameter data is available upon request for this device  
RCE(sat)46mΩ at 5A  
TBA  
FZT948  
TBA  
FZT949  
ELECTRICAL CHARACTERISTICS (at T  
amb  
= 25°C)  
PARAMETER  
SYMBOL MIN. TYP.  
MAX. UNIT CONDITIONS.  
Collector-Base Breakdown  
Voltage  
V(BR)CBO  
V(BR)CER  
V(BR)CEO  
V(BR)EBO  
ICBO  
-50  
-50  
-30  
-6  
-80  
-80  
-45  
-8  
V
V
V
V
IC=-100µA  
Collector-Emitter  
Breakdown Voltage  
IC=-1µA, RB ≤1kΩ  
IC=-10mA*  
IE=-100µA  
Collector-Emitter  
Breakdown Voltage  
Emitter-Base Breakdown  
Voltage  
Collector Cut-Off Current  
Collector Cut-Off Current  
Emitter Cut-Off Current  
-50  
-1  
nA  
µA  
VCB=-40V  
VCB=-40V,  
Tamb=100°C  
ICER  
R ≤1kΩ  
-50  
-1  
nA  
µA  
VCB=-40V  
VCB=-40V,  
Tamb=100°C  
IEBO  
-10  
nA  
VEB=-6V  
Collector-Emitter Saturation VCE(sat)  
Voltage  
-50  
-75  
mV  
mV  
mV  
mV  
IC=-0.5A, IB=-20mA*  
IC=-1A, IB=-20mA*  
IC=-2A, IB=-200mA*  
IC=-5.5A, IB=-500mA*  
-85  
-140  
-270  
-440  
-190  
-350  
Base-Emitter  
VBE(sat)  
VBE(on)  
hFE  
-1100 -1250 mV  
IC=-5.5A, IB=-500mA*  
Saturation Voltage  
Base-Emitter  
Turn-On Voltage  
-900  
-1060 mV  
300  
IC=-5.5A, VCE=-1V*  
Static Forward  
Current Transfer Ratio  
100  
100  
75  
200  
200  
140  
35  
IC=-10mA, VCE =-1V  
IC=-1A, VCE =-1V*  
IC=-5A, VCE =-1V*  
IC=-20A, VCE =-2V*  
Transition Frequency  
fT  
100  
MHz  
pF  
IC=-100mA, VCE=-10V  
f=50MHz  
Output Capacitance  
Switching Times  
Cobo  
122  
VCB=-10V, f=1MHz  
IC=-4A, IB1=-400mA  
ton  
toff  
120  
130  
ns  
ns  
I
B2=400mA, VCC=-10V  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%  
Spice parameter data is available upon request for this device  
RCE(sat)44mΩ at 4.5A  
TBA  
FZT949  
TYPICAL CHARACTERISTICS  
-55°C  
IC/IB=50  
IC/IB=10  
IC/IB=10  
Tamb=25°C  
1.6  
1.4  
1.2  
1.6  
1.4  
1.2  
+25°C  
+175°C  
1.0  
0.8  
0.6  
0.4  
0.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
0
0.001  
0.01  
0.1  
1
10 20  
0.001  
0.01  
0.1  
1
10 20  
IC - Collector Current (Amps)  
IC - Collector Current (Amps)  
CE(sat)  
V
C
CE(sat)  
V
C
v I  
v I  
-55°C  
IC/IB=10  
+25°C  
+100°C  
+25°C  
VCE=1V  
1.6  
1.4  
1.2  
1.6  
+100°C  
+175°C  
-55°C  
300  
1.4  
1.2  
1.0  
0.8  
1.0  
0.8  
0.6  
0.4  
0.2  
200  
100  
0.6  
0.4  
0.2  
0
0
0.001  
0.001  
0.01  
0.1  
1
10 20  
0.01  
0.1  
1
10 20  
IC - Collector Current (Amps)  
IC - Collector Current (Amps)  
FE  
h
C
v I  
BE(sat)  
V
C
v I  
Single Pulse Test Tamb=25 °C  
-55°C  
+25°C  
+100°C  
+175°C  
100  
VCE=1V  
1.6  
1.4  
1.2  
10  
1
1.0  
0.8  
0.6  
0.4  
0.2  
DC  
1s  
100ms  
10ms  
1ms  
100µs  
0.1  
0
1
0.1  
100  
10  
0.001  
0.01  
0.1  
1
10 20  
IC - Collector Current (Amps)  
BE(on)  
Vce - Collector Voltage (V)  
C
v I  
V
Safe Operating Area  
TBA  
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