1N40
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS
ID=250µA, VGS=0V
400
V
△BVDSS/△TJ Reference to 25°C, ID=250µA
0.4
V/°C
µA
Drain-Source Leakage Current
IDSS
IGSS
VDS=400V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
1
Forward
Reverse
+100 nA
-100 nA
Gate- Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=0.7A
2.0
4.0
4.5 6.8
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
ꢀ
CISS
COSS
CRSS
115 150 pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
20
3
30
4
pF
pF
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
4.0 5.5 nC
VGS=10V, VDS=320V, ID=1.8A
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
1.1
2.1
7
nC
nC
ns
ns
ns
ns
(Note 1, 2)
25
70
25
60
VDD=200V, ID=1.8A, RG=25ꢀ
(Note 1, 2)
30
7
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
25
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS
ISM
VSD
trr
1.4
5.6
1.5
A
A
IS=1.4A, VGS=0V
V
IS=1.8A, VGS=0V, dIF/dt=100A/µs
(Note 1)
160
0.4
ns
µC
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-529.b
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