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IXFN180N06

型号：

IXFN180N06

描述：

HiPerFET功率MOSFET[ HiPerFET Power MOSFETs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

191 K

下载PDF手册
HiPerFETTM  
VDSS  
ID25  
RDS(on)  
IXFN 200 N06  
IXFN 180 N07  
IXFN 200 N07  
60 V  
70 V  
70 V  
200 A 6 mW  
180 A 7 mW  
200 A 6 mW  
Power MOSFETs  
N-Channel Enhancement Mode  
Avalanche Rated, High dv/dt, Low trr  
trr £ 250 ns  
Symbol  
VDSS  
TestConditions  
MaximumRatings  
miniBLOC, SOT-227 B (IXFN)  
E153432  
TJ = 25°C to 150°C  
N07  
N06  
N07  
N06  
70  
60  
70  
60  
V
V
V
V
S
VDGR  
TJ = 25°C to 150°C; RGS = 1 MW  
G
VGS  
Continuous  
Transient  
±20  
±30  
V
V
VGSM  
S
D
ID25  
TC= 25°C; Chip capability  
200N06/200N07  
180N07  
200  
180  
100  
A
A
A
IL(RMS)  
Terminalcurrentlimit  
G = Gate  
D = Drain  
S = Source  
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
IDM  
IAR  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
600  
100  
A
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
30  
2
mJ  
J
Features  
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
,
5
V/ns  
• Internationalstandardpackages  
• miniBLOCwithAluminiumnitride  
isolation  
PD  
TC = 25°C  
520  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
• Low RDS (on) HDMOSTM process  
• Rugged polysilicon gate cell structure  
• Unclamped Inductive Switching (UIS)  
rated  
VISOL  
50/60 Hz, RMS  
IISOL £ 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
• Low package inductance  
• Fast intrinsic Rectifier  
Md  
Mountingtorque  
Terminalconnectiontorque  
1.5/13Nm/lb.in.  
1.5/13Nm/lb.in.  
Applications  
Weight  
30  
g
• DC-DC converters  
• Synchronousrectification  
• Battery chargers  
• Switched-modeandresonant-mode  
powersupplies  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
• DC choppers  
• Temperatureandlightingcontrols  
• Low voltage relays  
VDSS  
VGS = 0 V, ID = 1 mA  
N06  
N07  
60  
70  
V
V
VGS (th)  
IGSS  
VDS = VGS, ID = 8 mA  
VGS = ±20 VDC, VDS = 0  
VDS = 0.8 • VDSS  
2
4
V
±200 nA  
400 mA  
Advantages  
IDSS  
TJ = 25°C  
VGS = 0 V  
VGS = 10 V, ID = 0.5 • ID25  
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
TJ = 125°C  
2
mA  
• Easy to mount  
• Space savings  
• High power density  
RDS(on)  
200N06/200N07  
180N07  
6
7
mW  
mW  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
97533A(9/99)  
1 - 4  
IXFN 200N06 IXFN 180N07 IXFN 200N07  
Symbol  
gfs  
TestConditions  
CharacteristicValues  
miniBLOC, SOT-227 B  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
VDS = 10 V; ID = 0.5 • ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
60  
80  
S
Ciss  
Coss  
Crss  
9000  
4000  
2400  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
30  
60  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
M4 screws (4x) supplied  
Dim.  
Millimeter  
Min. Max.  
31.50 31.88 1.240 1.255  
Inches  
Min.  
RG = 1 W (External),  
100  
60  
Max.  
A
B
7.80  
8.20 0.307 0.323  
C
D
4.09  
4.09  
4.29 0.161 0.169  
4.29 0.161 0.169  
Qg(on)  
Qgs  
480  
60  
nC  
nC  
nC  
E
F
4.09  
4.29 0.161 0.169  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
14.91 15.11 0.587 0.595  
Qgd  
240  
G
H
30.12 30.30 1.186 1.193  
38.00 38.23 1.496 1.505  
J
K
11.68 12.22 0.460 0.481  
RthJC  
RthCK  
miniBLOC, SOT-227 B  
miniBLOC, SOT-227 B  
0.24 K/W  
K/W  
8.92  
9.60 0.351 0.378  
L
M
0.76  
0.84 0.030 0.033  
0.05  
12.60 12.85 0.496 0.506  
25.15 25.42 0.990 1.001  
N
O
1.98  
2.13 0.078 0.084  
P
4.95  
5.97 0.195 0.235  
Q
26.54 26.90 1.045 1.059  
R
S
3.94  
4.72  
4.42 0.155 0.174  
4.85 0.186 0.191  
T
U
24.59 25.07 0.968 0.987  
-0.05 0.1 -0.002 0.004  
Source-DrainDiode  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
IS  
TestConditions  
VGS = 0 V  
200N06/200N07  
180N07  
200  
180  
A
A
ISM  
Repetitive; pulse width limited by TJM  
600  
1.7  
A
V
VSD  
IF = 100 A, VGS = 0 V,  
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
trr  
150 250  
ns  
mC  
A
IF = 25 A  
-di/dt = 100 A/ms,  
VR = 50 V  
QRM  
IRM  
0.7  
9
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 4  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
IXFN 200N06 IXFN 180N07 IXFN 200N07  
175  
150  
125  
100  
75  
600  
TJ = 25OC  
TJ=25OC  
VGS=10V  
VGS=10V  
9V  
8V  
9V  
8V  
7V  
6V  
500  
400  
7V  
300  
5V  
6V  
200  
50  
5V  
100  
25  
0
0.0  
0
0.5  
1.0  
1.5  
2.0  
0
1
2
3
4
5
6
7
8
9
10  
VDS - Volts  
VDS - Volts  
Figure 1. Output Characteristics at 25OC  
600  
Figure 2. Extended Output Characteristics  
80  
TJ = 25oC  
VDS > 4RDS(ON)  
VGS=10V  
70  
60  
50  
40  
30  
20  
10  
0
500  
TJ=150OC  
TJ = 100oC  
TJ = 150oC  
400  
300  
200  
100  
0
TJ=25OC  
TJ=100OC  
2
4
6
8
10  
12  
0
100  
200  
300  
400  
500  
600  
VGS - Volts  
IC - Amperes  
Figure 3. Admittance Curves  
Figure 4. Transconductance vs.  
Drain Current  
1.4  
2.25  
TJ = 25oC  
I
D = 75A  
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
1.3  
VGS = 10V  
1.2  
1.1  
1.0  
0.9  
0.8  
VGS = 10V  
V
GS = 15V  
0
100  
200  
300  
400  
500  
600  
-50 -25  
0
25 50 75 100 125 150 175  
ID - Amperes  
TJ - Degrees C  
Figure 5. RDS(on) normalized to 0.5 ID25 value  
© 2000 IXYS All rights reserved  
Figure 6. Normalized RDS(on) vs. Junction  
Temperature  
3 - 4  
IXFN 200N06 IXFN 180N07 IXFN 200N07  
16  
14  
12  
10  
8
250  
IXFN200  
200  
VDS = 40V  
I
I
D = 38A  
G = 1mA  
IXFN180  
150  
(Terminalcurrentlimit)  
100  
6
4
50  
2
0
0
0
100 200 300 400 500 600 700  
-50 -25  
0
25 50 75 100 125 150  
Case Temperature - OC  
Gate Charge - nCoulombs  
Figure 7. Gate Charge  
Figure 8. Drain Current vs. Case  
Temperature  
12000  
10000  
8000  
6000  
4000  
2000  
0
400  
TJ =150OC  
F = 1MHz  
300  
Ciss  
200  
TJ =25OC  
TJ =150OC  
100  
Coss  
Crss  
TJ =100OC  
0
0.0  
0
10  
20  
30  
40  
0.5  
1.0  
1.5  
2.0  
VDS - Volts  
VSD - Volts  
Figure 9. Capacitance Curves  
Figure 10. Source-Drain Voltage vs. Source Current  
100  
10-1  
10-2  
10-3  
10-2  
10-1  
100  
Time - Seconds  
Figure 11. Transient Thermal Resistance  
© 2000 IXYS All rights reserved  
4 - 4  
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