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ZXTP2006E6TA

型号：

ZXTP2006E6TA

描述：

20V PNP低SAT中功率晶体管SOT23-6[ 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 ]

品牌：

ZETEX[ ZETEX SEMICONDUCTORS ]

页数：

8 页

PDF大小：

93 K

下载PDF手册
ZXTP2006E6  
20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6  
SUMMARY  
BV = -20V : R  
= 31m ; I = -3.5A  
CEO  
SAT  
C
DESCRIPTION  
Pa cka g e d in th e S OT23-6 o u tlin e th is n e w lo w  
saturation 20V PNP transistor offers extrem ely low on  
state losses m aking it ideal for use in DC-DC circuits  
and various driving and power m anagem ent functions.  
FEATURES  
SOT23-6  
• 3.5 Am ps continuous current  
• Extrem ely low saturation voltage (-70m V m ax @ 1A/100m A )  
• Up to 10 Am ps peak current  
• Very low saturation voltages  
APPLICATIONS  
• DC - DC converters  
• Battery charging  
• Power switches  
• Motor control  
• Power m anagem ent functions  
PINOUT  
ORDERING INFORMATION  
DEVICE  
REEL  
S IZE  
QUANTITY PER REEL  
TAPE WIDTH  
7”  
8m m em bossed  
8m m em bossed  
3,000  
ZXTP2006E6TA  
ZXTP2006E6TC  
13”  
10,000  
DEVICE MARKING  
52  
TOP VIEW  
ISSUE 1 - J UNE 2005  
1
ZXTP2006E6  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
S YMBOL  
LIMIT  
-25  
UNIT  
V
Co lle cto r-b a s e vo lta g e  
BV  
CBO  
Co lle cto r-e m itte r vo lta g e  
Em itte r-b a s e vo lta g e  
BV  
BV  
-20  
V
CEO  
EBO  
-7.5  
-3.5  
-10  
V
Co n tin u o u s co lle cto r cu rre n t  
I
I
A
C
Pe a k p u ls e cu rre n t  
A
CM  
(a )  
P
W
Po w e r d is s ip a tio n a t T =25°C  
1.1  
8.8  
D
A
m W/°C  
Lin e a r d e ra tin g fa cto r  
(b )  
Po w e r d is s ip a tio n a t T =25°C  
A
P
W
1.7  
D
Lin e a r d e ra tin g fa cto r  
m W/°C  
13.6  
THERMAL RESISTANCE  
PARAMETER  
S YMBOL  
VALUE  
113  
UNIT  
°C/W  
°C/W  
(a )  
J u n ctio n to a m b ie n t  
R
R
⍜J A  
⍜J C  
(b )  
J u n ctio n to a m b ie n t  
73  
NOTES  
(a) For a device surface m ounted on 25m m x 25m m x 0.6m m FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.  
(b) As above m easured at t<5 seconds.  
ISSUE 1 - J UNE 2005  
2
ZXTP2006E6  
CHARACTERISTICS  
ISSUE 1 - J UNE 2005  
3
ZXTP2006E6  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated)  
am b  
PARAMETER  
S YMBOL MIN.  
TYP. MAX. UNIT CONDITIONS  
Co lle cto r-b a s e b re a kd o w n vo lta g e  
Co lle cto r-e m itte r b re a kd o w n vo lta g e  
Em itte r-b a s e b re a kd o w n vo lta g e  
Co lle cto r cu t-o ff cu rre n t  
BV  
BV  
BV  
-25  
-20  
-49  
-43  
V
V
I
I
I
= -100␮A  
= -10m A *  
= -100␮A  
CBO  
CEO  
EBO  
C
C
E
-7.5  
-8.4  
V
I
I
I
-100  
-100  
-100  
nA  
nA  
nA  
V
V
V
= -20V  
= -20V  
= -6V  
CBO  
CB  
CB  
EB  
Co lle cto r cu t-o ff cu rre n t  
CES  
EBO  
Em itte r cu t-o ff cu rre n t  
Co lle cto r-e m itte r s a tu ra tio n vo lta g e  
V
-10  
-15  
m V  
m V  
m V  
I
I
I
= -0.1A, I = -10m A*  
B
CE(S AT)  
C
-100  
-110  
-140  
-130  
= -1A, I = -10m A*  
B
C
= -3.5A, I = -350m A*  
B
C
Ba s e -e m itte r s a tu ra tio n vo lta g e  
Ba s e -e m itte r tu rn -o n vo lta g e  
V
V
-0.96  
-0.8  
-1.1  
-0.9  
V
V
I = -3.5A, I = -350m A*  
C B  
BE(S AT)  
BE(ON)  
FE  
I
= -3.5A, V = -2V *  
CE  
C
S ta tic fo rw a rd cu rre n t tra n s fe r ra tio  
h
300  
300  
150  
10  
575  
450  
285  
40  
I
I
I
I
= -10m A, V = -2V *  
CE  
C
C
C
C
900  
= -1A, V = -2V *  
CE  
= -3.5A, V = -2V *  
CE  
= -10A, V = -2V *  
CE  
Tra n s itio n fre q u e n cy  
Ou tp u t ca p a cita n ce  
NOTES  
f
110  
I
= -50m A, V = -10V  
CE  
T
C
f = 50MHz  
C
45  
pF  
V
= -10V, f = 1MHz *  
OBO  
CB  
* Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ2%.  
ISSUE 1 - J UNE 2005  
4
ZXTP2006E6  
TYPICAL CHARACTERISTICS  
ISSUE 1 - J UNE 2005  
5
ZXTP2006E6  
NOTES:  
ISSUE 1 - J UNE 2005  
6
ZXTP2006E6  
NOTES:  
ISSUE 1 - J UNE 2005  
7
ZXTP2006E6  
PACKAGE OUTLINE  
PAD LAYOUT DETAILS  
Controlling dim ensions are in m illim eters. Approxim ate conversions are given in inches  
PACKAGE DIMENSIONS  
Millim eters  
Inches  
Millim eters  
Inches  
Min  
DIM  
DIM  
Min  
0.90  
0.00  
0.90  
0.20  
0.09  
2.70  
Max  
Min  
Max  
0.057  
0.006  
0.051  
0.020  
0.010  
0.122  
Min  
2.20  
1.30  
0.10  
Max  
Max  
0.118  
0.071  
0.024  
A
A1  
A2  
b
1.45  
0.15  
1.30  
0.50  
0.26  
3.10  
0.035  
0.00  
E
E1  
L
3.20  
1.80  
0.60  
0.0866  
0.0511  
0.004  
0.035  
0.008  
0.003  
0.106  
e
0.95 REF  
1.90 REF  
0° 30°  
0.037 REF  
0.075 REF  
0° 30°  
C
e1  
⍜
D
© Zetex Sem iconductors plc 2005  
Europe  
Am ericas  
Asia Pacific  
Zetex (Asia) Ltd  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
Corporate Headquarters  
Zetex Gm bH  
Zetex Inc  
Zetex Sem iconductors plc  
Zetex Technology Park  
Chadderton, Oldham , OL9 9LL  
United Kingdom  
Streitfeldstraß e 19  
D-81673 München  
Germ any  
700 Veterans Mem orial Hwy  
Hauppauge, NY 11788  
USA  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
These offices are supported by agents and distributors in m ajor countries world-wide.  
This publication is issued to provide outline inform ation only which (unless agreed by the Com pany in writing) m ay not be used, applied or reproduced  
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Com pany  
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
For the latest product inform ation, log on to www.zetex.com  
ISSUE 1 - J UNE 2005  
SCXXXX####DS#  
8
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