4N60
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
ꢀ55~+150
℃
＊Drain current limited by maximum junction temperature.
■
Thermal Characteristics
Ratings
Units
Parameter
Symbol
TOꢀ220
TOꢀ220F
62.5
TOꢀ252
50＊（110）
Thermal Resistance JunctionꢀAmbient
Thermal Resistance, CaseꢀtoꢀSink Typ.
Thermal Resistance JunctionꢀCase
RthJA
RthCS
RthJC
℃/W
0.5
1.2
ꢀꢀ
ꢀꢀ
3.65
2.56
■
Electrical Characteristics（TJ=25℃,unless Otherwise specified.）
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Off Characteristics
DrainꢀSource Breakdown Voltage
BVDSS
IDSS
VGS=0V,ID=250ꢂA
VDS=600V,VGS=0V
VDS=480V,TC=125℃
VGS=30V,VDS=0V
VGS=ꢀ30V,VDS=0V
ID=250ꢂA
600
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
1
V
ꢂA
Zero Gate Voltage Drain Current
ꢀꢀ
ꢀꢀ
10
100
ꢀ100
ꢀꢀ
ꢂA
Forward
Reverse
ꢀꢀ
ꢀꢀ
nA
GateꢀBody Leakage
Current
IGSS
ꢀꢀ
ꢀꢀ
nA
Breakdown Voltage Temperature
Coefficient
△BVDSS/△TJ
ꢀꢀ
0.7
V/℃
On Characteristics
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250ꢂA
2.0
ꢀꢀ
ꢀꢀ
4.0
2.5
V
VDS=10V,
ID=2.0A(TO220,TO220F)
Static DrainꢀSource OnꢀResistance
2.0
ꢁ
ID=1.4A(TO252)
Dynamic Characteristics
Input Capacitance
CISS
COSS
CRSS
ꢀꢀ
ꢀꢀ
ꢀꢀ
560
55
7
ꢀꢀ
ꢀꢀ
ꢀꢀ
pF
pF
pF
VDS=25V,VGS=0V,
f=1MHZ
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
TurnꢀOn Delay Time
Rise Time
tD(ON)
tR
tD(OFF)
tF
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
10
40
40
50
16
2.5
6.5
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ns
ns
V
DD=300V,
ID=4.0A(TO220,TO220F)
ID=2.8A(TO252)
RG=25ꢁ
TurnꢀOff Delay Time
Fall Time
ns
(Note 4, 5)
ns
VDS=480V,
Total Gate Charge
QG
nC
nC
nC
ID=4.0A(TO220,TO220F)
ID=2.8A(TO252)
VGS=10V
GateꢀSource Charge
GateꢀDrain Charge
QGS
QGD
(Note 4, 5)
Drain-Source Diode Characteristics
VGS=0V
ISD=4.0A(TO220,TO220F)
ISD=2.8A(TO252)
VSD
ꢀꢀ
ꢀꢀ
1.4
V
DrainꢀSource Diode Forward
Voltage
TOꢀ220,TOꢀ220F
TOꢀ252
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
4.0
2.8
16.0
11.2
ꢀꢀ
Continuous DrainꢀSource Current
Pulsed DrainꢀSource Current
ISD
A
A
TOꢀ220,TOꢀ220F
TOꢀ252
ꢀꢀ
ISM
ꢀꢀ
ISD=4.0A,
dISD/dt=100A/ꢂs
Reverse Recovery Time
tRR
300
2.0
ns
Reverse Recovery Charge
QRR
(Note 4)
ꢀꢀ
ꢂC
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 20 mH, IAS = 4.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 4.0 A, di/dt ≤ 200A/μs, VDD≤BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤300μs, Duty cycle≤ 2%
5. Essentially independent of operating temperature
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