7P20
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
SYMBOL
VDSS
VGSS
ID
RATINGS
-200
±30
UNIT
V
V
-5.7
A
Pulsed Drain Current (Note 2)
Avalanche Current (Note 2)
Single Pulsed Avalanche Energy (Note 3)
Repetitive Avalanche Energy (Note 2)
Peak Diode Recovery dv/dt (Note 4)
IDM
IAR
EAS
EAR
-22.8
-5.7
570
5.5
-5.5
A
A
mJ
mJ
V/ns
dv/dt
Ta = 25°C
TC = 25°C
2.5
55
Power Dissipation
PD
W
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55 ~ +150
°C
°C
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. L=26.3mH, IAS=-5.7A, VDD=-50V, RG=25Ω
4. ISD≦-7.3A, di/dt≦300A/μs, VDD≦BVDSS
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
100
UNIT
°C /W
°C /W
Junction to Ambient
Junction to Case
θJC
2.27
ELECTRICAL CHARACTERISTICS (Tc=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
BVDSS
VGS=0 V, ID=-250 µA
ID=-250µA,
Referenced to25°C
VDS=-200V, VGS=0V
VDS=0V, VGS=±30V
-200
-2.0
V
ΔBVDSS/ΔTJ
-0.1
V/°C
IDSS
IGSS
-1
µA
±100 nA
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=-250µA
VGS=-10V, ID=-2.85A
VDS=-40V, ID=-2.85A (Note 1)
-4.0
V
Ω
S
0.54 0.69
3.7
CISS
COSS
CRSS
590
140
25
770
180
35
pF
pF
pF
VDS=-25V, VGS=0V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
QG
QGS
QGD
tD(ON)
tR
19
4.6
9.5
15
110
30
25
nC
nC
nC
ns
ns
ns
ns
VDS=-160V, VGS=-10V,
ID=-7.3A (Note 1, 2)
40
230
70
VDD=-100V, ID=-7.3A,
RG=25ꢀ(Note 1, 2)
tD(OFF)
tF
42
90
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS
IS=-5.7A, VGS=0V
-5.0
-5.7
V
A
Maximum Body-Diode Continuous Current
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
-22.8
A
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
tRR
QRR
V
GS=0V, IS=-7.30 A
180
1.07
ns
µC
dIF/dt=100A/s (Note 1)
Note: 1. Pulse Test : Pulse width≦300μs, Duty cycle≦2%
Note: 2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
2 of 5
QW-R502-288.B
www.unisonic.com.tw
