WTC2305
Electrical Characteristics(TA = 25℃ Unless otherwise noted)
Characteristic
Symbol Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
-30
-0.7
-
V(BR)DSS
VGS(Th)
IGSS
-
-
-
-
VGS=0,ID=-250μA
V
Gate-Source Threshold Voltage
-1.3
±100
VDS=VGS,ID=-250
μA
Gate-Source Leakage Current
VGS= ±12V
nA
μA
Drain- Source Leakage Current(Tj=25˚C)
IDSS
-
-
-1
VDS=-24V,VGS =0
Drain-Source On-Resistance 2
VGS=-10V,ID=-4.2A
VGS=-4.5V,ID=-4.0A
VGS=-2.5V,ID=-1.0A
-
-
-
53
64
86
70
85
130
RDS(on)
mΩ
Forward Transconductance
7
11
-
S
gfs
VDS=-5.0V, ID=-5.0A
Dynamic
Total Gate Charge
Qg
-
-
-
-
-
-
6.36
1.79
nC
VDS = -15V, I = -4A,
V
GS = -4.5V
D
Gate-Source Charge
Qgs
nC
nC
VDS = -15V, I = -4A,
V
GS = -4.5V
GS = -4.5V
D
Gate-Drain Charge
Qgd
1.42
VDS = -15V, I = -4A,
V
D
Turn-On Delay Time
VDD = -15V, RL= 3.6Ω
td(on)
11.36
ns
,I = -1A, V
= -10V,
RG = 6Ω
D
GEN
Turn-On Rise Time
VDD = -15V, RL= 3.6Ω
tr
td(off)
tf
ns
ns
ns
2.32
,I = -1A, V
= -10V,
= -10V,
RG = 6Ω
RG = 6Ω
RG = 6Ω
D
GEN
Turn-Off Delay Time
VDD = -15V, RL= 3.6Ω
34.88
3.52
,I = -1A, V
D
GEN
Turn-Off Fall Time
VDD = -15V, RL= 3.6Ω
ID = -1A, VGEN = -10V,
Input Capacitance
VDS = -15V, VGS = 0V
Ciss
826.18
pF
pF
,
f = 1.0 MHz
f = 1.0 MHz
Output Capacitance
VDS = -15V, VGS = 0V
Coss
90.74
53.18
,
Reverse Transfer Capacitance
VDS = -15V, VGS = 0V
pF
Crss
,
f = 1.0 MHz
Source-Drain Diode
Max. Diode Forward Current
IS
A
V
-2.2
-1
Diode Forward Voltage
IS = -1.0A, VGS = 0V
VSD
Note: 1. Pulse test: pulse width <= 300us, duty cycle<= 2%
2. Static parameters are based on package level with recommended wire-bonding
3. Guaranteed by design; not subject to production testing
WEITRON
http//:www.weitron.com.tw
Rev.B 05-Jun-09
2/4
