PXT2222A
TRANSISTOR (NPN)
SOT-89
1. BASE
FEATURES
z
Epitaxial planar die construction
z
Complementary PNP Type available(PXT2907A)
2. COLLECTOR
3. EMITTER
1
2
3
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
Parameter
Value
75
Units
Collector-Base Voltage
Collector-Emitter Voltage
V
V
40
VCEO
VEBO
IC
Emitter-Base Voltage
Collector Current -Continuous
6
600
V
mA
Collector Power Dissipation
Junction Temperature
Storage Temperature
0.5
150
W
℃
℃
PC
TJ
-55 +150
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
MIN
75
40
6
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC= 10μ A,IE=0
IC= 10mA, IB=0
V
IE=10μA, IC=0
V
VCB=60V, IE=0
0. 01
0. 01
μA
μA
Emitter cut-off current
IEBO
VEB= 5V , IC=0
hFE(1)
VCE=10V, IC= 0.1mA
VCE=10V, IC= 1mA
VCE=10V, IC= 10mA
VCE=10V, IC= 150mA
VCE=1V, IC= 150mA
VCE=10V, IC= 500mA
IC=500mA, IB= 50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
35
50
hFE(2)
hFE(3)
75
DC current gain
hFE(4)
100
50
300
hFE(5)
hFE(6)
40
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
1
V
V
V
V
Collector-emitter saturation voltage
0.3
2.0
1.2
Base-emitter saturation voltage
Transition frequency
0.6
VCE=10V, IC=20mA
f=100MHz
fT
300
MHz
Output Capacitance
Delay time
Cob
td
8
pF
nS
nS
nS
nS
VCB=10V, IE= 0,f=1MHz
10
25
225
60
VCC=30V, IC=150mA
V
BE(off)=0.5V,IB1=15mA
CC=30V, IC=150mA
Rise time
tr
Storage time
Fall time
tS
tf
V
IB1=- IB2= 15mA
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
