PZTA44
NPN Silicon Planar Epitaxial Transistor
COLLECTOR
2, 4
4
1. BASE
2.COLLECTOR
3.EMITTER
4.COLLECTOR
BASE
1
1
2
3
3
SOT-223
EMITTER
ABSOLUTE MAXIMUM RATINGS
(T =25 C)
A
Symbol
Unit
V
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Value
400
500
6
V
CEO
V
V
CBO
V
V
EBO
I
300
Collector Current (DC)
mA
C(DC)
P
Total Device Disspation TA=25˚C
Junction Temperature
W
˚C
˚C
1.2
150
D
Tj
Storage, Temperature
-55 to +150
Tstg
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
400
-
-
V
(I =1mA)
C
Collector-Base Breakdown Voltage
(I =100µA)
C
500
-
-
-
-
-
V
V
Emitter-Base Breakdown Voltage
(I =10 µA)
E
6
-
-
Collector-Emitter Cutoff Current
100
nA
(V =400V)
CB
Collector Cutoff Current
(V =400V)
CB
ICES
-
nA
nA
500
100
Emitter-Base Cutoff Current
-
-
IEBO
(V =4V)
EB
DC Current Gain
(V = 10V, I = 1mA)
hFE1
hFE2
hFE3
hFE4
-
-
-
-
-
300
-
40
50
CE
C
(V = 10V, I = 10mA)
-
CE
C
(V = 10V, I = 50mA)
45
CE
C
-
20
(V = 10V, I = 100mA)
CE
C
Collector-Emitter Saturation Voltages
VCE(sat)
-
-
-
-
mV
(I = 20mA, I = 2mA)
375
750
C
B
(I = 50mA, I = 5mA)
C
B
Base-Emitter Saturation Voltages
VBE(sat)
Cob
-
-
-
750
6
mV
pF
(I = 10mA, I = 1mA)
C
B
Output Capacitance
4
(V = 20 Vdc, f = 1MHz)
CE
Device Marking
PZTA44=44
WEITRON
http://www.weitron.com.tw
1/3
09-Jun-10
