SEMICONDUCTOR
PZTA44
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
A
TELEPHONE APPLICATION.
H
L
2
FEATURES
High Breakdown Voltage.
Collector Power Dissipation : PC=2W(TC=25
K
E
B
)
1
3
J
G
F
F
MAXIMUM RATING (Ta=25
)
DIM
A
B
MILLIMETERS
_
6.5+0.2
1
2
3
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
500
UNIT
V
C
_
3.5+0.2
C
1.8 MAX
D
D
E
0.7+0.15/-0.1
_
+
7
0.3
400
V
F
2.3 TYP
G
H
J
0.26+0.09/-0.02
3.0+0.15/-0.1
6
V
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
_
1.75+0.25
Collector Current
300
mA
K
L
0.1 MAX
10 MAX
Collector Power Dissipation
PC
2
W
(TC=25
)
Tj
Junction Temperature
150
SOT-223
Tstg
Storage Temperature Range
-55 150
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
)
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)CES
V(BR)EBO
TEST CONDITION
MIN.
500
400
400
6.0
TYP.
MAX. UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (1)
Collector-Emitter Breakdown Voltage (2)
Emitter-Base Breakdown Voltage
IC=100 A, IE=0
-
-
-
-
-
-
-
-
V
V
V
V
IC=1mA, IB=0
IC=100 A, IB=0
IE=10 A, IC=0
VCB=400V, IE=0
VCB=320V, IE=0
VCE=400V, IB=0
VCE=320V, IB=0
VEB=4V, IC=0
ICBO
Collector Cut off Current
-
-
-
-
100
500
nA
ICES
IEBO
Collector Cut off Current
Emitter Cutoff Current
nA
nA
-
40
50
45
40
-
-
-
-
-
-
-
-
-
100
-
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
IC=10mA, IB=1mA
IC=10mA, IB=1mA
VCB=20V, IE=0, f=1MHz
200
-
hFE
DC Current Gain
*
-
VCE(sat)
VBE(sat)
Cob
Collector-Emitter Saturation Voltage
*
0.5
0.75
7
V
V
Base-Emitter Saturation Voltage
Collector Output Capacitane
*
-
-
pF
*Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
2005. 1. 17
Revision No : 0
1/3
