PZT358
NPN Transistor
Elektronische Bauelemente
Silicon Planar High Current Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
SOT-223
Description
C
The PZT358 is designed for general
purpose switching and amplifier
applications.
3
4
E
1
Features
5
I
* 6Amps Continous Current, Up To
10Amps Peak Current
J
2
* Excellent Gain Characteristic,
Specified Up To 10Amps
* Very Low Saturation Voltages
REF.
REF.
Min.
Max.
7.30
3.10
0.10
10̓
Min.
13̓TYP.
2.30 REF.
6.30
6.30
3.30
3.30
1.40
Max.
A
C
D
E
I
6.70
2.90
0.02
0̓
0.60
0.25
B
J
3 5 8
1
2
3
4
5
6.70
6.70
3.70
3.70
1.80
Date Code
0.80
0.35
B
C
E
H
MAXIMUM RATINGS* (Tamb =25oC, unless otherwise specified)
Symbol
Parameter
Value
200
100
6
Units
VCBO
Collector-Base Voltage
V
V
V
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
6
A
IC
10
W
3
Total Power Dissipation
PD
O
C
Storage Temperature
-55~-150
Junction and
TJ,
Tstg
*The power which can be dissipated assuming the device is mounted in a typical on a P.C.B. with copper equal to 4 square inch min..
o
C
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Typ.
Parameter
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
Min
Max
Uni Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
IC= 100µA, IE=0
IC= 10mA, IB=0
IE= 100µA, IC=0
-
-
-
-
-
-
V
V
V
200
100
-
6
-
10
nA VCB= 150V, IE=0
VCES=100V
nA VEB= 6V, IC=0
IC= 100mA, IB= 5mA
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ICES
-
50
nA
-
IEBO
-
-
-
10
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)
*VBE(on)
*hFE1
-
50
Collector Saturation Voltage
-
-
mV
-
-
150
IC= 2A, IB= 100mA
IC= 5A, IB= 500mA
IC= 5A, IB= 500mA
VCE= 2V, IC= 5A
340
Base Saturation Voltage
Base-Emitter Voltage
-
-
1.25
V
V
-
-
1.1
-
100
100
50
-
VCE= 2V, IC= 10mA
VCE= 2V, IC= 2A
*hFE2
200
-
300
DC Current Gain
*hFE3
-
-
-
-
-
-
VCE= 2V, IC= 4A
-
*hFE4
VCE= 2V, IC= 10A
VCE= 10V, IC= 100mA
20
-
Gain-Bandwidth Product
Output Capacitance
130
35
55
MH
z
, f=50MHz
fT
-
-
-
pF VCB= 10V, IE=0, f=1MHz
Cob
On-Time
Off-Time
Ton
nS
VCC=10V,IC=1A,IB1=IB2=100mA
Toff
1650
*Measured under pulse condition. Pulse widthЉ300)s, Duty CycleЉ2%
Spice parameter data is available upon request for this device.
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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