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IXTQ96N20P

型号：

IXTQ96N20P

描述：

N沟道Engancement模式[ N-Channel Engancement Mode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

605 K

下载PDF手册
IXTH 96N20P  
IXTQ 96N20P  
IXTT 96N20P  
VDSS  
ID25  
= 200 V  
= 96 A  
PolarHTTM  
Power MOSFET  
RDS(on) = 24 mΩ  
N-Channel Enhancement Mode  
TO-247 (IXTH)  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
200  
200  
V
V
G
VGSM  
20  
V
D
(TAB)  
S
ID25  
TC = 25°C  
96  
75  
A
A
A
ID(RMS)  
IDM  
External lead current limit  
TC = 25°C, pulse width limited by TJM  
TO-3P(IXTQ)  
225  
IAR  
TC = 25°C  
60  
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
50  
mJ  
J
1.5  
G
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 4 Ω  
,
10  
V/ns  
D
S
(TAB)  
TC = 25°C  
600  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +150  
°C  
°C  
°C  
TO-268 (IXTT)  
TL  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
G
S
Md  
Mounting torque  
(TO-3P, TO-247)  
1.13/10 Nm/lb.in.  
D (TAB)  
Weight  
TO-3P  
TO-247  
TO-268  
5.5  
6.0  
5.0  
g
g
g
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
Features  
Symbol  
TestConditions  
Characteristic Values  
z
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
z
z
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250µA  
VGS = 20 VDC, VDS = 0  
200  
V
V
2.5  
5.0  
100  
nA  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
TJ = 150°C  
z
Easy to mount  
Space savings  
z
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
24 mΩ  
z
High power density  
DS99117D(01/05)  
© 2005 IXYS All rights reserved  
IXTH 96N20P IXTQ 96N20P  
IXTT 96N20P  
Symbol  
gfs  
TestConditions  
Characteristic Values  
TO-3P (IXTQ) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 10 V; ID = 0.5 ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
40  
52  
S
Ciss  
Coss  
Crss  
4800  
1020  
270  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
28  
30  
75  
30  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25  
RG = 4 Ω (External)  
Qg(on)  
Qgs  
145  
30  
nC  
nC  
nC  
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
(TO-3P, TO-247)  
Qgd  
80  
RthJC  
RthCK  
0.25 K/W  
K/W  
0.21  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
IS  
TestConditions  
Min.  
typ.  
Max.  
VGS = 0 V  
96  
A
A
V
TO-268 Outline  
ISM  
Repetitive  
240  
1.5  
VSD  
IF = IS, VGS = 0 V,  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
IF = 25 A  
-di/dt = 100 A/µs  
VR = 100 V  
160  
3.0  
ns  
QRM  
µC  
TO-247 AD Outline  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A12  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
A
b
b12  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
1
2
3
b
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
19.81 20.32  
4.50  
.780 .800  
.177  
L1  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
4.32  
6.40 0.232 0.252  
R
S
5.49  
.170 .216  
242 BSC  
6.15 BSC  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6771478B2  
oneormoreofthefollowingU.S.patents:  
IXTH 96N20P IXTQ 96N20P  
IXTT 96N20P  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
º
@ 25 C  
º
@ 25 C  
250  
225  
200  
175  
150  
125  
100  
75  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
9V  
V
GS  
= 10V  
9V  
8V  
8V  
7V  
6V  
7V  
6V  
50  
25  
0
0
0
0
0.5  
1
1.5  
2
2.5  
3
0
2
4
6
8
10 12 14 16 18 20  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
Fig. 4. RDS(on Normalized to 0.5 ID25  
Value vs. Junction Temperature  
)
@ 150 C  
º
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3
2.8  
2.6  
2.4  
2.2  
2
VGS = 10V  
9V  
VGS = 10V  
8V  
7V  
ID = 96A  
1.8  
1.6  
1.4  
1.2  
1
ID = 48A  
6V  
5V  
0.8  
0.6  
1
2
3
4
5
6
7
-50 -25  
0
25  
50  
75 100 125 150 175  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to  
0.5 ID25 Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
4.3  
4
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
3.7  
3.4  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
TJ = 175ºC  
TJ = 125ºC  
TJ = 25ºC  
0.7  
-50 -25  
0
25  
50  
75 100 125 150 175  
25 50 75 100 125 150 175 200 225 250  
I D - Amperes  
TC - Degrees Centigrade  
© 2005 IXYS All rights reserved  
IXTH 96N20P IXTQ 96N20P  
IXTT 96N20P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
160  
140  
120  
100  
80  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = -40ºC  
25ºC  
150ºC  
60  
TJ = 150ºC  
25ºC  
-40ºC  
40  
20  
0
4.5  
0.4  
0
5
5.5  
6
6.5  
7
7.5  
8
8.5  
9
0
25  
50  
75  
100 125 150 175 200  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
300  
250  
200  
150  
100  
50  
VDS = 100V  
D = 48A  
G = 10mA  
I
I
TJ = 150ºC  
0.6  
TJ = 25ºC  
1
0
0.8  
1.2  
1.4  
1.6  
0
15 30 45 60 75 90 105 120 135 150  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Forward-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
10000  
1000  
100  
1000  
100  
10  
f = 1MHz  
TJ = 175ºC  
RDS(on) Limit  
TC = 25ºC  
C
iss  
25µs  
100µs  
1ms  
C
C
10ms  
oss  
DC  
rss  
30  
1
5
10  
15  
20  
25  
35  
40  
10  
100  
1000  
VDS - Volts  
VD S - Volts  
IXTH 96N20P IXTQ 96N20P  
IXTT 96N20P  
Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is ta n c e  
1 . 0 0  
0 . 1 0  
0 . 0 1  
1
1 0  
1 0 0  
1 0 0 0  
Pu ls e W id th - millis e c o n d s  
© 2005 IXYS All rights reserved  
厂商 型号 描述 页数 下载

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