IXTR 200N10P
Symbol
gfs
TestConditions
Characteristic Values
ISOPLUS247OUTLINE
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 100 A, Note 1
VGS = 0 V, VDS = 25 V, f = 1 MHz
60
97
S
Ciss
Coss
Crss
7600
2900
860
pF
pF
pF
td(on)
tr
td(off)
tf
30
35
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A
RG = 3.3 Ω (External)
150
90
Qg(on)
Qgs
240
50
nC
nC
nC
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
VGS= 10 V, VDS = 0.5 VDSS, ID = 100 A
Qgd
135
RthJC
RthCK
.42 K/W
K/W
Dim.
Millimeter
Inches
Min.
Max. Min. Max.
0.15
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
Symbol
IS
TestConditions
Min.
typ.
Max.
VGS = 0 V
200
A
A
V
e
L
L1
5.45 BSC
19.81 20.32
3.81
.215 BSC
.780 .800
.150 .170
ISM
VSD
trr
Repetitive
400
1.5
4.32
Q
R
5.59
4.32
6.20
4.83
.220 .244
.170 .190
IF = IS, VGS = 0 V, Note 1
IF = 25 A, dI/dt = 100 A/µs
100
140 ns
Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
oneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
