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IXGA12N120A2

型号：

IXGA12N120A2

描述：

IGBT优化切换至为5KHz[ IGBT Optimized for switching up to 5KHz ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

579 K

下载PDF手册
IXGA 12N120A2  
IXGP 12N120A2  
VCES  
IC25  
= 1200 V  
24 A  
IGBT  
=
Optimized for  
switching up to 5KHz  
VCE(sat) = 3.0 V  
Preliminary data sheet  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
1200  
1200  
V
V
TO-220AB(IXGP)  
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
G
C
E
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
TC = 25°C, 1 ms  
24  
12  
48  
A
A
A
TO-263AA(IXGA)  
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 100 Ω  
ICM = 24  
A
(RBSOA)  
Clamped inductive load  
@ 0.8 VCES  
G
C (TAB)  
E
PC  
TC = 25°C  
75  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
•International standard packages  
•LJEowDEVCCET(saOt) -220AB and TO-263AA  
- for minimum on-state conduction  
losses  
Md  
Mounting torque with screw M3  
Mounting torque with screw M3.5  
0.45/4 Nm/lb.in.  
0.55/5 Nm/lb.in.  
Weight  
TO-220  
TO-263  
4
2
g
g
•MOS Gate turn-on  
- drive simplicity  
Applications  
• AC motor speed control  
• DC servo and robot drives  
• DC choppers  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
BVCES  
VGE(th)  
IC = 250 µA, VGE = 0 V  
IC = 250 µA, VCE = VGE  
1200  
2.5  
V
V
• Uninterruptible power supplies (UPS)  
• Switch-mode and resonant-mode  
5.0  
• Cpoawpaecritsourpdpilsiecsharge  
Advantages  
ICES  
VCE = VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
25  
250  
µA  
µA  
IGES  
VCE = 0 V, VGE = 20 V  
IC = IC90, VGE = 15V  
100  
3.0  
nA  
V
• Easy to mount with one screw  
• Reduces assembly time and cost  
• High power density  
VCE(sat)  
2.4  
© 2004 IXYS All rights reserved  
DS99199(8/04)  
IXGA12N120A2  
IXGP12N120A2  
TO-220 AB Dimensions  
Symbol  
TestConditions  
Characteristic Values  
Min. Typ. Max.  
(TJ = 25°C, unless otherwise specified)  
gfs  
IC = IC90 VCE = 10 V  
4.0  
7.8  
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
IC(on)  
VGE = 10 V, VCE = 10V  
35  
A
Cies  
Coes  
Cres  
530  
30  
4
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
Qge  
Qgc  
24  
5.5  
8.8  
nC  
nC  
nC  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
Pins: 1 - Gate  
3 - Emitter  
2 - Collector  
4 - Collector  
Bottom Side  
Inductive load, TJ = 25°C  
IC = IC90, VGE = 15 V  
VCE = 960 V, RG = Roff = 100 Ω  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 VCES  
higher TJ or increased RG  
td(on)  
tri  
td(off)  
tfi  
15  
30  
ns  
ns  
ns  
ns  
mJ  
680 1000  
650 1000  
5.4  
,
Eoff  
9.0  
td(on)  
tri  
Eon  
td(off)  
tfi  
15  
30  
0.5  
700  
1050  
7.7  
ns  
ns  
mJ  
ns  
ns  
mJ  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V  
VCE = 960 V, RG = Roff = 100 Ω  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 VCES  
higher TJ or increased RG  
,
TO-263AAOutline  
Eoff  
RthJC  
RthCK  
1.66 K/W  
K/W  
TO-220  
0.5  
1. Gate  
2. Collector  
3. Emitter  
4. Collector  
BottomSide  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
Min.RecommendedFootprint  
(Dimensions in inches and mm)  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160  
.080  
.190  
.110  
b
b2  
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
c
c2  
0.46  
1.14  
0.74  
1.40  
.018  
.045  
.029  
.055  
D
D1  
8.64  
7.11  
9.65  
8.13  
.340  
.280  
.380  
.320  
E
E1  
e
9.65  
6.86  
2.54  
10.29  
8.13  
BSC  
.380  
.270  
.100  
.405  
.320  
BSC  
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.38  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.015  
L1  
L2  
L3  
L4  
R
0.46  
0.74  
.018  
.029  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
IXGA12N120A2  
IXGP12N120A2  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
º
C
@ 25 C  
º
24  
22  
20  
18  
16  
14  
12  
10  
8
70  
60  
50  
40  
30  
20  
10  
0
V
GE  
= 15V  
V
GE  
= 15V  
13V  
11V  
13V  
11V  
9V  
9V  
7V  
5V  
6
7V  
5V  
4
2
0
0.5  
0.5  
6
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
0
5
10  
15  
20  
25  
30  
VC E - Volts  
VC E - Volts  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
Fig. 3. Output Characteristics  
@ 125  
ºC  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
24  
22  
20  
18  
16  
14  
12  
10  
8
V
= 15V  
13V  
11V  
GE  
V
= 15V  
GE  
I
= 24A  
C
9V  
7V  
I
= 12A  
= 6A  
C
6
I
C
4
5V  
4
2
0
-50  
-25  
0
25  
50  
75  
100 125 150  
1
1.5  
2
2.5  
3
3.5  
4.5  
5
TJ - Degrees Centigrade  
VCE - Volts  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
8
7
6
5
4
3
2
1
24  
21  
18  
15  
12  
9
= 25ºC  
T
J
I
= 24A  
12A  
6A  
C
T = 125ºC  
J
6
25ºC  
-40ºC  
3
0
4
4.5  
5
5.5  
6
6.5  
7
7.5  
8
8.5  
9
7
8
9
10 11 12 13 14 15 16  
VG E - Volts  
VG E - Volts  
© 2004 IXYS All rights reserved  
IXGA12N120A2  
IXGP12N120A2  
Fig. 8. Dependence of Turn-off  
Energy Loss on RG  
Fig. 7. Transconductance  
11  
10  
9
18  
16  
14  
12  
10  
8
I
= 24A  
C
8
T = 25ºC  
J
7
V
GE  
= 15V  
6
V
CE  
= 960V  
T = -40ºC  
J
5
I
= 12A  
= 6A  
C
C
25ºC  
125ºC  
4
6
3
4
I
2
2
1
0
0
0
200  
400  
600  
800  
1000  
0
3
6
9
12  
15  
18  
21  
24  
27  
I C - Amperes  
R G - Ohms  
Fig. 9. Dependence of Turn-Off  
Energy Loss on IC  
Fig. 10. Dependence of Turn-off  
Delay Time on RG  
3
2.7  
2.4  
2.1  
1.8  
1.5  
1.2  
0.9  
0.6  
16  
14  
12  
10  
8
V
GE  
= 15V  
R
=100Ω  
G
I
= 6A  
12A  
24A  
V
= 960V  
C
V
GE  
= 15V  
CE  
T = 25ºC  
J
V
CE  
= 960V  
T = 25ºC  
J
6
4
2
0
0
200  
400  
600  
800  
1000  
6
9
12  
15  
18  
21  
24  
R G - Ohms  
I C - Amperes  
Fig. 12. Dependence of Turn-off  
Switching Time on IC  
Fig. 11. Dependence of Turn-off  
Current Fall Time on RG  
0.80  
0.75  
0.70  
0.65  
0.60  
0.55  
0.50  
0.45  
0.40  
0.35  
0.85  
0.80  
0.75  
0.70  
0.65  
0.60  
0.55  
0.50  
0.45  
I
= 24A  
C
I
= 12A  
C
td(off)  
tfi - - - - -  
V
V
= 15V  
GE  
CE  
R
= 100Ω  
G
= 960V  
V
V
= 15V  
GE  
T = 25ºC  
J
= 960V  
CE  
IC = 6A  
200  
T = 25ºC  
J
0
400  
600  
800  
1000  
6
8
10  
12  
14  
16  
18  
20  
22  
24  
R G - Ohms  
I C - Amperes  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXGA12N120A2  
IXGP12N120A2  
Fig. 14. Reverse-Bias Safe  
Operating Area  
Fig. 13. Gate Charge  
16  
14  
12  
10  
8
30  
25  
20  
15  
10  
5
V
= 600V  
CE  
I
I
= 12A  
C
G
= 10mA  
6
T = 125ºC  
J
4
R
= 100Ω  
G
dV/dT < 10V/ns  
2
0
0
100  
300  
500  
700  
VC E - Volts  
900  
1100  
1300  
0
2
4
6
8
10 12 14 16 18 20 22 24  
Q G - nanoCoulombs  
Fig. 15. Capacitance  
1000  
100  
10  
C
ies  
C
oes  
C
res  
f = 1 MHz  
10  
1
0
5
15  
20  
25  
30  
35  
40  
VC E - Volts  
Fig. 17. Maximum Transient Thermal Resistance  
10.00  
1.00  
0.10  
0.1  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2004 IXYS All rights reserved  
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