IXGA/ IXGP/ IXGH10N60
IXGA/ IXGP/ IXGH10N60A
TO-220 AB Outline
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
4
8
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
750
100
30
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
50
15
25
70 nC
25 nC
45 nC
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
A
B
12.70
14.23
14.93
16.50
0.500
0.560
0.580
0.650
C
D
9.66
3.54
10.66
4.08
0.380
0.139
0.420
0.161
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100 µH
td(on)
tri
100
200
0.4
ns
ns
E
F
5.85
2.29
6.85
2.79
0.230
0.090
0.270
0.110
VCE = 0.8 VCES
,
G
H
1.15
2.79
1.77
6.35
0.045
0.110
0.070
0.250
Eon
td(off)
tfi
mJ
ns
RG = Roff = 150 Ω
J
K
0.64
2.54
0.89
BSC
0.025
0.100
0.035
BSC
Remarks: Switching times
may increase for VCE
600
300
0.6
M
N
4.32
0.64
4.82
1.39
0.170
0.025
0.190
0.055
10N60A
10N60A
ns
(Clamp) > 0.8 • VCES
,
Q
R
0.51
2.04
0.76
2.49
0.020
0.080
0.030
0.115
Eoff
higher TJ or increased RG
mJ
Inductive load, TJ = 125°C
td(on)
tri
100
200
1
ns
ns
TO-263 AA Outline
IC = IC90, VGE = 15 V,
L = 100 µH
Eon
td(off)
tfi
mJ
VCE = 0.8 VCES
,
900 1500 ns
570 2000 ns
360
RG = Roff = 150 Ω
10N60
10N60A
Remarks: Switching times
may increase for VCE
(Clamp) > 0.8 • VCES, higher
600 ns
Eoff
10N60
10N60A
2.0
1.2
mJ
mJ
TJ or increased RG
1. Gate
2. Collector
3. Emitter
4. Collector Bottom Side
RthJC
RthCK
1.25 K/W
K/W
0.25
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
IXGA/P/IXGH 10N60 / 10N60A characteristic curves are located in the
IXGH 10N60U1 and IXGH 10N60AU1 data sheet.
A
A1
4.06
2.03
4.83
2.79
.160 .190
.080 .110
b
b2
0.51
1.14
0.99
1.40
.020 .039
.045 .055
c
c2
0.46
1.14
0.74
1.40
.018 .029
.045 .055
D
D1
8.64
7.11
9.65
8.13
.340 .380
.280 .320
TO-247 AD Outline
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380 .405
.270 .320
.100 BSC
Dim.
Millimeter
Min. Max.
Inches
L
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575 .625
.090 .110
.040 .055
.050 .070
Min.
Max.
L1
L2
L3
L4
A
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
A
A12
0
.015
b
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
R
0.46
0.74
.018 .029
b
b12
P
Min. Recommended Footprint
C
D
E
.4
20.80
15.75
.8
21.46
16.26
.016
.819
.610
.031
.845
.640
e
L
L1
5.20
19.81
5.72
20.32
4.50
0.205 0.225
.780
.800
.177
P
3.55
5.89
3.65
6.40
.140
0.232 0.252
.144
Q
R
S
4.32
6.15
5.49
BSC
.170
242
.216
BSC
e
(Dimensions in inches and (mm))
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
